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63CNQ080

Description
30 A, 80 V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size111KB,2 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Environmental Compliance
Download Datasheet Parametric Compare View All

63CNQ080 Overview

30 A, 80 V, SILICON, RECTIFIER DIODE

63CNQ080 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerMicrosemi
package instructionR-XSFM-T3
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresREVERSE ENERGY TESTED
applicationGENERAL PURPOSE
Shell connectionCATHODE
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-XSFM-T3
Maximum non-repetitive peak forward current600 A
Number of components2
Phase1
Number of terminals3
Maximum operating temperature175 °C
Minimum operating temperature-55 °C
Maximum output current30 A
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage80 V
surface mountNO
technologySCHOTTKY
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
FST6380 - FST63100
F
A
N 2-PLCS.
P
1
2
3
Schottky MiniMod
Dim. Inches
1
2
3
Common Cathode
A
C
E
F
G
H
J
K
L
M
N
P
1.180
.025
.350
1.490
.695
.088
.240
.115
.460
.034
.151
.015
1.195
.035
.370
1.510
.715
.098
.260
.135
.480
.046
.161
.025
Millimeter
29.97
0.64
8.89
37.85
17.65
2.24
6.10
2.92
11.68
0.86
3.84
0.38
30.35
0.89
9.40
38.35
18.16
2.49
6.60
3.43
12.19
1.17
4.09
0.64
Minimum Maximum Minimum Maximum Notes
E
L
M
3 PINS eq sp at .200
G
K
C
J
Note: Baseplate Common with Pin 2
H
1
2
3
A=Common Anode
3
1
2
D=Doubler
Dia.
Microsemi
Catalog Number
FST6380*
FST6390*
FST63100*
Industry
Part Number
63CNQ080
63CNQ100
Working
Peak Reverse
Voltage
80V
90V
100V
Repetitive
Peak Reverse
Voltage
80V
90V
100V
Schottky Barrier Rectifier
Guard Ring Protection
2X30 Amperes avg.
175°C Junction Temperature
Reverse Energy Tested
VRRM - 80 to 100 Volts
ROHS Compliant
*Add the Suffix A for Common Anode, D for Doubler
Electrical Characteristics
I F(AV) 60 Amps
Average forward current per pkg
I F(AV) 30 Amps
Average forward current per leg
I FSM 600 Amps
Maximum surge current per leg
Max repetitive peak reverse current per leg I R(OV) 2 Amps
VFM 0.60 Volts
Max peak forward voltage per leg
VFM 0.82 Volts
Max peak forward voltage per leg
I RM 20 mA
Max peak reverse current per leg
I RM 1.5 mA
Max reverse current per leg
CJ 1000 pF
Typical junction capacitance per leg
TC = 150°C, Square wave, R0JC = 0.5°C/W
T C = 150°C, Square wave, R0JC = 1.0°C/W
8.3 ms, half sine, T J = 175°C
f = 1 KHZ, 25°C, 1µsec square wave
I FM = 30A: T J = 175°C*
I FM = 30A: T J = 25°C*
VRRM, T J = 125°C*
VRRM, T J = 25°C
VR = 5.0V, T C = 25°C
*Pulse test: Pulse width 300µsec, Duty cycle 2%
Thermal and Mechanical Characteristics
Storage temp range
Operating junction temp range
Max thermal resistance per leg
Max thermal resistance per pkg
Typical thermal resistance (greased)
Mounting Base Torque
Weight
T STG
TJ
R 0JC
R 0JC
R 0CS
-55°C to 175°C
-55°C to 175°C
Junction to case
1.0°C/W
0.5°C/W
Junction to case
Case to sink
0.3°C/W
10 inch pounds maximum
0.3 ounce (8.4 grams) typical
www.microsemi.com
January, 2010 - Rev. 3

63CNQ080 Related Products

63CNQ080 FST6380 FST63100 FST6380_10 FST6390
Description 30 A, 80 V, SILICON, RECTIFIER DIODE 30 A, 80 V, SILICON, RECTIFIER DIODE 30 A, 100 V, SILICON, RECTIFIER DIODE 30 A, 80 V, SILICON, RECTIFIER DIODE 30 A, 80 V, SILICON, RECTIFIER DIODE
Is it Rohs certified? conform to conform to conform to - -
Maker Microsemi Microsemi Microsemi - -
package instruction R-XSFM-T3 R-PSFM-T3 R-PSFM-T3 - -
Reach Compliance Code compli compli compli - -
ECCN code EAR99 EAR99 EAR99 - -
application GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE - -
Shell connection CATHODE CATHODE CATHODE - -
Configuration COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS - -
Diode component materials SILICON SILICON SILICON - -
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE - -
JESD-30 code R-XSFM-T3 R-PSFM-T3 R-PSFM-T3 - -
Maximum non-repetitive peak forward current 600 A 600 A 600 A - -
Number of components 2 2 2 - -
Phase 1 1 1 - -
Number of terminals 3 3 3 - -
Maximum operating temperature 175 °C 175 °C 175 °C - -
Minimum operating temperature -55 °C -55 °C -55 °C - -
Maximum output current 30 A 30 A 30 A - -
Package body material UNSPECIFIED PLASTIC/EPOXY PLASTIC/EPOXY - -
Package shape RECTANGULAR RECTANGULAR RECTANGULAR - -
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT - -
Certification status Not Qualified Not Qualified Not Qualified - -
Maximum repetitive peak reverse voltage 80 V 80 V 100 V - -
surface mount NO NO NO - -
technology SCHOTTKY SCHOTTKY SCHOTTKY - -
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE - -
Terminal location SINGLE SINGLE SINGLE - -

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