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MBR50080CT

Description
250 A, 80 V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size121KB,3 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Environmental Compliance
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MBR50080CT Overview

250 A, 80 V, SILICON, RECTIFIER DIODE

MBR50080CT Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerMicrosemi
Contacts2
Reach Compliance Codecompli
ECCN codeEAR99
applicationGENERAL PURPOSE
Shell connectionCATHODE
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-XUFM-X2
Maximum non-repetitive peak forward current5000 A
Number of components2
Phase1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-55 °C
Maximum output current250 A
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage80 V
surface mountNO
technologySCHOTTKY
Terminal formUNSPECIFIED
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
CPT50080 - CPT500100
A
R
G
Baseplate
A=Common Anode
B
Q
N
W
Baseplate
Common Cathode
U
C
H
V
E
Baseplate
D=Doubler
Notes:
Baseplate: Nickel plated
copper
Schottky PowerMod
Dim. Inches
Min.
A
B
C
E
F
G
H
N
Q
R
U
V
W
Millimeters
Min.
Max.
Notes
Max.
F
U
---
3.630
0.800
0.700
---
.680
0.130
0.120
0.510
0.490
1.375 BSC
---
0.050
---
---
0.290
0.275
3.150 BSC
0.600
---
0.312
0.340
0.180
0.195
---
92.20
17.78
20.32
---
17.28
3.30
3.05
12.45
12.95
34.92 BSC
---
1.25
---
---
6.99
7.37
80.01 BSC
15.24
---
7.92
8.64
4.57
4.95
1/4-20
Dia.
Dia.
Microsemi
Catalog Number
CPT50080*
CPT50090*
CPT500100*
Industry
Part Number
MBR50080CT
MBR500100CT
Working Peak
Repetitive Peak
Reverse Voltage Reverse Voltage
80V
90V
100V
80V
90V
100V
Schottky Barrier Rectifier
Guard ring protection
500 Amperes/ 80 to 100 Volts
175°C junction temperature
Reverse energy tested
ROHS Compliant
*Add Suffix A for Common Anode, D for Doubler
Electrical Characteristics
I F(AV) 500 Amps
Average forward current per pkg
I F(AV) 250 Amps
Average forward current per leg
I FSM 5000 Amps
Maximum surge current per leg
Maximum repetitive reverse current per leg I R(OV) 2 Amps
VFM
0.90 Volts
Max peak forward voltage per leg
VFM
0.72 Volts
Max peak forward voltage per leg
I RM
200 mA
Max peak reverse current per leg
I RM
8.0 mA
Max peak reverse current per leg
CJ
6400 pF
Typical junction capacitance per leg
TC = 122°C, Square wave, R0JC = 0.12°C/W
TC = 122°C, Square wave, R0JC = 0.24°C/W
8.3ms, half sine, TJ = 175°C
f = 1 KHZ, 25°C, 1µsec square wave
I FM = 250A: J = 25°C
T
I FM = 250A: J = 175°C
T
VRRM, TJ = 125°C*
VRRM, TJ = 25°C
VR = 5.0V,T C = 25°C
*Pulse test: Pulse width 300µsec, Duty cycle 2%
Thermal and Mechanical Characteristics
Storage temp range
Operating junction temp range
Max thermal resistance per leg
Max thermal resistance per pkg
Typical thermal resistance (greased)
Terminal Torque
Mounting Base Torque (outside holes)
Mounting Base Torque (center hole)
center hole must be torqued first
Weight
T STG
TJ
R OJC
R OJC
R OCS
-55°C to 175°C
-55°C to 175°C
0.24°C/W Junction to case
0.12°C/W Junction to case
0.08°C/W Case to sink
35-50 inch pounds
30-40 inch pounds
8-10 inch pounds
2.8 ounces (78 grams) typical
www.microsemi.com
January, 2010 - Rev. 7

MBR50080CT Related Products

MBR50080CT CPT500100 CPT50080 CPT50090 CPT50080_10 MBR500100CT
Description 250 A, 80 V, SILICON, RECTIFIER DIODE 250 A, 80 V, SILICON, RECTIFIER DIODE 250 A, 80 V, SILICON, RECTIFIER DIODE 250 A, 90 V, SILICON, RECTIFIER DIODE 250 A, 80 V, SILICON, RECTIFIER DIODE 250 A, 100 V, SILICON, RECTIFIER DIODE
Is it Rohs certified? conform to conform to incompatible incompatible - conform to
Maker Microsemi Microsemi - Microsemi - Microsemi
Reach Compliance Code compli compli unknow unknown - compli
ECCN code EAR99 EAR99 EAR99 EAR99 - EAR99
application GENERAL PURPOSE POWER POWER POWER - GENERAL PURPOSE
Shell connection CATHODE CATHODE CATHODE CATHODE - CATHODE
Configuration COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS - COMMON CATHODE, 2 ELEMENTS
Diode component materials SILICON SILICON SILICON SILICON - SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE - RECTIFIER DIODE
JESD-30 code R-XUFM-X2 R-XUFM-X2 R-XUFM-X2 R-XUFM-X2 - R-XUFM-X2
Maximum non-repetitive peak forward current 5000 A 5000 A 5000 A 5000 A - 5000 A
Number of components 2 2 2 2 - 2
Phase 1 1 1 1 - 1
Number of terminals 2 2 2 2 - 2
Maximum output current 250 A 250 A 250 A 250 A - 250 A
Package body material UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED - UNSPECIFIED
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR - RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT - FLANGE MOUNT
Certification status Not Qualified Not Qualified Not Qualified Not Qualified - Not Qualified
Maximum repetitive peak reverse voltage 80 V 100 V 80 V 90 V - 100 V
surface mount NO NO NO NO - NO
technology SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY - SCHOTTKY
Terminal form UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED - UNSPECIFIED
Terminal location UPPER UPPER UPPER UPPER - UPPER
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