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RN1110F(TPL3)

Description
RN1110F(TPL3)
CategoryDiscrete semiconductor    The transistor   
File Size282KB,5 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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RN1110F(TPL3) Overview

RN1110F(TPL3)

RN1110F(TPL3) Parametric

Parameter NameAttribute value
MakerToshiba Semiconductor
package instruction,
Reach Compliance Codeunknown
RN1110F,RN1111F
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT Process)
RN1110F,RN1111F
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Complementary to RN2110F, RN2111F
Unit: mm
Equivalent Circuit
Absolute Maximum Ratings
(Ta = 25°C)
Characterisstic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
c
P
c
T
j
T
stg
Rating
50
50
5
100
100
150
−55~150
Unit
V
V
V
mA
mW
°C
°C
JEDEC
JEITA
TOSHIBA
2-2HA1A
Weight: 2.3 mg (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics
(Ta = 25°C)
Characteristic
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Translation frequency
Collector output capacitance
Input resistor
RN1110F
RN1111F
Symbol
I
CBO
I
EBO
h
FE
V
CE (sat)
f
T
C
ob
Test
Circuit
Test Condition
V
CB
= 50V, I
E
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 5V, I
C
= 1mA
I
C
= 5mA, I
B
= 0.25mA
V
CE
= 10V, I
C
= 5mA
V
CB
= 10V, I
E
= 0, f = 1MHz
Min
120
3.29
7
Typ.
0.1
250
3
4.7
10
Max
100
100
700
0.3
6
6.11
13
Unit
nA
nA
V
MHz
pF
kΩ
R1
1
2007-11-01

RN1110F(TPL3) Related Products

RN1110F(TPL3) RN1111F(F) RN1111F(TPL3) RN1110F(F) RN1110F(TE85L,F) RN1110F(TPL3,F)
Description RN1110F(TPL3) PRE-BIASED \"DIGITAL\" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416VAR RN1111F(TPL3) PRE-BIASED \"DIGITAL\" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416VAR PRE-BIASED \"DIGITAL\" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416VAR PRE-BIASED \"DIGITAL\" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416VAR
Maker Toshiba Semiconductor Toshiba Semiconductor Toshiba Semiconductor Toshiba Semiconductor Toshiba Semiconductor Toshiba Semiconductor
Reach Compliance Code unknown unknown unknown unknown unknown unknown
Is it Rohs certified? - conform to - conform to conform to conform to
Maximum collector current (IC) - 0.1 A - 0.1 A 0.1 A 0.1 A
Minimum DC current gain (hFE) - 120 - 120 120 120
Number of components - 1 - 1 1 1
Polarity/channel type - NPN - NPN NPN NPN
Maximum power dissipation(Abs) - 0.1 W - 0.1 W 0.1 W 0.1 W
surface mount - YES - YES YES YES
Transistor component materials - SILICON - SILICON SILICON SILICON

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