RN1901FE~RN1906FE
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor)
RN1901FE, RN1902FE, RN1903FE
RN1904FE, RN1905FE, RN1906FE
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
•
•
Two devices are incorporated into an Extreme-Super-Mini (6-pin)
package.
Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enables the manufacture of ever more compact
equipment and lowers assembly cost.
•
Complementary to RN2901FE to RN2906FE
Unit: mm
Equivalent Circuit and Bias Resistor Values
C
Type No.
RN1901FE
RN1902FE
R2
RN1903FE
RN1904FE
E
RN1905FE
RN1906FE
R1 (kΩ)
4.7
10
22
47
2.2
4.7
R2 (kΩ)
4.7
10
22
47
47
47
B
R1
JEDEC
JEITA
TOSHIBA
―
―
2-2N1G
Weight: 3 mg (typ.)
Absolute Maximum Ratings
(Ta = 25°C)
(Q1, Q2 common)
Equivalent Circuit
Symbol
RN1901FE to
RN1906FE
RN1901FE to
RN1904FE
RN1905FE,
RN1906FE
V
CBO
V
CEO
Rating
50
50
10
V
EBO
5
V
Unit
V
V
Characteristics
Collector-base voltage
Collector-emitter voltage
(top view)
6
5
4
Q1
Q2
Emitter-base voltage
1
I
C
P
C
(Note
1)
T
j
T
stg
100
100
150
−55
to 150
mA
mW
°C
°C
2
3
Collector current
Collector power dissipation RN1901FE to
RN1906FE
Junction temperature
Storage temperature range
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating
1
2010-05-14
Embedded System
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