RN1904FE(T5LMAA,F) datasheet, PDF

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RN1904FE(T5LMAA,F): DescriptionSmall Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon; CategoryDiscrete semiconductor The transistor; File Size546KB，8 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/

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RN1904FE(T5LMAA,F) Overview

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon

RN1904FE(T5LMAA,F) Parametric

Parameter Name	Attribute value
Maker	Toshiba Semiconductor
package instruction	SMALL OUTLINE, R-PDSO-F6
Reach Compliance Code	unknown
Other features	BUILT IN BIAS RESISTANCE RATIO IS 1
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	50 V
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	80
JESD-30 code	R-PDSO-F6
Number of components	2
Number of terminals	6
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
surface mount	YES
Terminal form	FLAT
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	250 MHz

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RN1901FE~RN1906FE

TOSHIBA Transistor

Silicon NPN Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor)

RN1901FE, RN1902FE, RN1903FE

RN1904FE, RN1905FE, RN1906FE

Switching, Inverter Circuit, Interface Circuit and

Driver Circuit Applications

•

Two devices are incorporated into an Extreme-Super-Mini (6-pin)

package.

Incorporating a bias resistor into a transistor reduces parts count.

Reducing the parts count enables the manufacture of ever more compact

equipment and lowers assembly cost.

•

Complementary to RN2901FE to RN2906FE

Unit: mm

Equivalent Circuit and Bias Resistor Values

Type No.

RN1901FE

RN1902FE

RN1903FE

RN1904FE

RN1905FE

RN1906FE

R1 (kΩ)

4.7

2.2

4.7

R2 (kΩ)

4.7

JEDEC

JEITA

TOSHIBA

―

2-2N1G

Weight: 3 mg (typ.)

Absolute Maximum Ratings

(Ta = 25°C)

(Q1, Q2 common)

Equivalent Circuit

Characteristics

Collector-base voltage

Collector-emitter voltage

RN1901FE to

RN1906FE

RN1901FE to

RN1904FE

RN1905FE

RN1906FE

Symbol

CBO

CEO

Rating

EBO

(Note1)

stg

100

150

−55

to 150

°C

Unit

(top view)

Emitter-base voltage

Collector current

Collector power dissipation RN1901FE to

RN1906FE

Junction temperature

Storage temperature range

Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Total rating

Note1:

Start of commercial production

2000-05

2014-03-01

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