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MAD1103E3

Description
UNIDIRECTIONAL, 16 ELEMENT, SILICON, TVS DIODE
CategoryDiscrete semiconductor    diode   
File Size64KB,3 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Environmental Compliance
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MAD1103E3 Overview

UNIDIRECTIONAL, 16 ELEMENT, SILICON, TVS DIODE

MAD1103E3 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerMicrosemi
Parts packaging codeDIP
package instructionR-PDIP-T14
Contacts14
Reach Compliance Codecompli
ECCN codeEAR99
Minimum breakdown voltage90 V
ConfigurationCOMPLEX
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeR-PDIP-T14
JESD-609 codee3
Number of components16
Number of terminals14
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum power dissipation1.5 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage75 V
surface mountNO
technologyAVALANCHE
Terminal surfaceMATTE TIN
Terminal formTHROUGH-HOLE
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
MAD1103 and MAD1103e3
Switching Diode Array
Steering Diode TVS Array
TM
SCOTTSDALE DIVISION
DESCRIPTION
These low capacitance diode arrays are multiple, discrete, isolated
junctions fabricated by a planar process and mounted in a 14-PIN package
for use as steering diodes protecting up to eight I/O ports from ESD, EFT,
or surge by directing them either to the positive side of the power supply
line or to ground (see figure 1). An external TVS diode may be added
between the positive supply line and ground to prevent overvoltage on the
supply rail. They may also be used in fast switching core-driver
applications. This includes computers and peripheral equipment such as
magnetic cores, thin-film memories, plated-wire memories, etc., as well as
decoding or encoding applications. These arrays offer many advantages of
integrated circuits such as high-density packaging and improved reliability.
This is a result of fewer pick and place operations, smaller footprint, smaller
weight, and elimination of various discrete packages that may not be as
user friendly in PC board mounting. They are available with either Tin-Lead
plating terminations or as RoHS Compliant with annealed matte-Tin finish
by adding an “e3“ suffix to the part number.
APPEARANCE
WWW .
Microsemi
.C
OM
Top Viewing Pin Layout
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
FEATURES
16 Diode Array / protects 8 lines
Molded 14-Pin Dual-In-Line Package
Low Capacitance 1.5 pF per diode
Switching speeds less than 5 ns
RoHS compliant devices available by adding “e3” suffix
IEC 61000-4 compatible
61000-4-2 (ESD): Air 15 kV, contact 8 kV
61000-4-4 (EFT): 40 A, 5/50 ns
61000-4-5 (surge): 12 A, 8/20
µs
APPLICATIONS / BENEFITS
Low capacitance steering diode protection for high
frequency data lines
RS-232 & RS-422 Interface Networks
Ethernet: 10 Base T
Computer I / O Ports
LAN
Switching Core Drivers
MAXIMUM RATINGS
Operating Temperature: -55°C to +150°C
Storage Temperature: -55°C to +150°C
Forward Surge Current: 2 Amps (8.3 ms)
12 Amps (8/20
µs
)
Continuous Forward Current: 400 mA (one diode)
Power Dissipation (P
D
): 1500 mW (total)
Solder temperatures: 260°C for 10 s (maximum)
MECHANICAL AND PACKAGING
CASE: Void-free transfer molded thermosetting epoxy
body meeting UL94V-0 flammability classification
TERMINALS: Tin-Lead or RoHS Compliant annealed
matte-Tin plating solderable per MIL-STD-750 method
2026
MARKING: MSC logo, MAD1103 or MAD1103e3 and
date code. Pin #1 is to the left of the dot or indent on
top of package.
WEIGHT: 0.997 grams (approximate)
Carrier tubes: 25 pcs (Standard)
LEAKAGE
CURRENT
I
R
T
A
= 150°C
µA
@V
R
20
MAX
300
@V
R
20
CAPACITANCE
C
@0V
pF
TYP
1.5
REVERSE
RECOVERY
TIME
t
rr
ns
MAX
5.0
FORWARD
VOLTAGE
V
F
I
F
= 10 mA
V
MAX
1.00
FORWARD
VOLTAGE
V
F
I
F
= 100 mA
V
MAX
1.20
MAD1103
ELECTRICAL CHARACTERISTICS PER LINE @ 25°C Unless otherwise specified
BREAKDOWN
VOLTAGE
V
BR
@ I
BR
=100µA
V
MIN
MAD1103
MAD1103e3
90
WORKING
PEAK
REVERSE
VOLTAGE
V
RWM
V
MAX
75
LEAKAGE
CURRENT
I
R
T
A
= 25°C
µA
MAX
0.200
PART
NUMBER
Copyright
©
2005
6-28-2005 REV N
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1

MAD1103E3 Related Products

MAD1103E3 MAD1103 MAD1103_05
Description UNIDIRECTIONAL, 16 ELEMENT, SILICON, TVS DIODE UNIDIRECTIONAL, 16 ELEMENT, SILICON, TVS DIODE UNIDIRECTIONAL, 16 ELEMENT, SILICON, TVS DIODE
Is it Rohs certified? conform to incompatible -
Maker Microsemi Microsemi -
Parts packaging code DIP DIP -
Contacts 14 14 -
Reach Compliance Code compli unknow -
ECCN code EAR99 EAR99 -
Diode type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE -
JESD-609 code e3 e0 -
Terminal surface MATTE TIN Tin/Lead (Sn/Pb) -

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