MS3023
RF & Microwave Transistors
General Purpose Amplifier Applications
GENERAL DESCRIPTION
The
MS3023
is a common base, hermetically sealed silicon NPN microwave power
transistor. This device is designed for Class-C applications in the 1 ~ 2 GHz
frequency range. Gold metallization and emitter ballasting provide long-term
reliability and superior ruggedness.
FEATURES
•
•
•
•
•
•
•
GOLD METALLIZATIOM
P
OUT
= 3 W MINIMUN
2.0 GHz
G
P
= 7.8 dB
INFINITE VSWR CAPABLE @ RATED CONDITIONS
HERMETIC PACKAGE
COMMON BASE CONFIGURATION
ABSOLUTE MAXIMUM RATINGS @ 25°C
°
SYMBOL
P
DISS1
I
C1
V
CC
T
J
T
STG
θjc
1
PARAMETER
Power Dissipation
Device Current
Collector Supply Voltage
Junction Temperature (Pulsed RF Operation)
Storage Temperature
Junction-Case Thermal Resistance
VALUE
12.5
550
35
+200
-65 to +150
14.0
UNITS
W
mA
V
°C
°C
°C/W
NOTES: 1. At rated output power, pulse conditions and MSC fixture
Rev. A: Apr. 2010
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Visit our web site at
www.microsemi.com
or contact our factory direct.
MS3023
ELECTRICAL CHARACTERISTICS @ 25°C
°
SYMBOL
BV
CER
BV
CBO
BV
EBO
I
CES
H
FE
CHARACTERISTICS
Collector to Emitter Breakdown
Collector to Base Breakdown
Emitter to Base Breakdown
Collector to Emitter Leakage
DC – Current Gain
TEST CONDITIONS
I
C
= 5 mA, R
BE
= 10
I
C
= 1 mA, I
E
= 0 mA
I
E
= 1 mA, I
C
= 0 mA
V
BE
= 0 V, V
CB
= 28V
I
C
= 200 mA, V
CE
= 5 V
MIN
45
45
3.5
-
15
TYP
-
-
-
-
-
MAX
-
-
-
1.0
120
UNITS
V
V
V
mA
-
FUNCTIONAL CHARACTERISTICS @ 25°C
°
SYMBOL
P
OUT
G
P
η
C
C
OB
CHARACTERISTICS
Power Out
Power Gain
Collector Efficiency
Output Capacitance
TEST CONDITIONS
F = 1.0 / 2.0 GHz
V
CB
= 28V
P
in
= 0.5W
F = 1MHz V
CB
= 28V
MIN
3.0
7.8
35
-
TYP
-
-
-
-
MAX
-
-
-
6.5
UNITS
W
dB
%
pF
Typical Impedance Values
Input
Matching
Network
DUT
Output
Matching
Network
Z
S
Frequency (GHz)
1.0
1.5
2.0
Z
S
( )
4.4 – j5.5
4.5 – j9.0
4.6 – j12.5
Z
L
Z
L
( )
9.6 + j16.0
4.3 + j7.0
3.0 + j1.0
* V
CC
= 28V, P
IN
= 0.5W, P
OUT
> 3W
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Visit our web site at
www.microsemi.com
or contact our factory direct.
MS3023
Typical Performance (@ 1.0GHz / 2.0GHz)
Input/Output
6.00
14.00
12.00
Gain
Ouput Power (W)
5.00
Gain (dB)
10.00
8.00
6.00
4.00
3.00
2.00
1.0 GHz
1.00
4.00
1.0 GHz
2.00
2.0 GHz
0.00
0.00
0.10
0.20
0.30
0.40
0.50
0.60
0.00
0.00
1.00
2.00
3.00
4.00
2.0 GHz
5.00
6.00
Input Pow er (W )
Output Pow er (W)
Input Return Loss
0.00
Efficiency
80.0%
Input Return Loss (dB)
1.0 GHz
70.0%
-5.00
2.0 GHz
Effi. (% )
60.0%
50.0%
40.0%
-10.00
-15.00
30.0%
20.0%
-20.00
1.0 GHz
10.0%
-25.00
0.00
2.0 GHz
1.00
2.00
3.00
4.00
5.00
6.00
0.0%
0.00
1.00
2.00
3.00
4.00
5.00
6.00
Output Pow er (W)
Output Pow er (W)
NOTES: The fixture is not broad-band.
The unit is tested with 1.0 GHz fixture and 2.0 GHz fixture.
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Visit our web site at
www.microsemi.com
or contact our factory direct.
MS3023
MS3023 Test Circuit Layout @ 1.0 GHz
MS3023 Test Circuit Component Designations and Values @ 1.0 GHz
Part
C1
C2, C5,
C6
C8
M1
M3
M5
Description
1.0pF Chip Capacitor (ATC 600F)
4.7pF Chip Capacitor (ATC 600F)
47uF 63V Electrolytic Capacitor
66 x 1120 mils (W x L)
300 x 450 mils (W x L)
30 x 1706 mils (W x L)
Part
C4
C3, C7,
C8
PCB
M2
M4
M6
Description
2.4pF Chip Capacitor (ATC 600F)
100pF Chip Capacitor (ATC 600F)
RF-35,
ε
r
=3.55, 30mils, 1oz
400 x 480 mils (W x L)
66 x 1090 mils (W x L)
50 x 1740 mils (W x L)
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Visit our web site at
www.microsemi.com
or contact our factory direct.
MS3023
MS3023 Test Circuit Layout @ 2.0 GHz
MS3023 Test Circuit Component Designations and Values @ 2.0 GHz
Part
C1
C3
C5, C8
C7
C10
M1
M3
M5
M7
M9
M11
Description
0.2pF Chip Capacitor (ATC 200B)
1.5pF Chip Capacitor (ATC 200B)
39pF Chip Capacitor (ATC 200A)
0.3pF Chip Capacitor (ATC 200B)
47uF 63V Electrolytic Capacitor
86 x 550 mils (W x L)
86 x 150 mils (W x L)
86 x 625 mils (W x L)
540 x 1015 mils (W x L)
86 x 445 mils (W x L)
25 x 1040 mils (W x L)
Part
C2
C4
C6
C9
PCB
M2
M4
M6
M8
M10
Description
1.7pF Chip Capacitor (ATC 200B)
2.2pF Chip Capacitor (ATC 200B)
0.4pF Chip Capacitor (ATC 200B)
100pF Chip Capacitor (ATC 200B)
Arlon,
ε
r
=2.55, 31mils, 1oz
180 x 135 mils (W x L)
180 x 150 mils (W x L)
650 x 390 mils (W x L)
86 x 500 mils (W x L)
25 x 1055 mils (W x L)
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Visit our web site at
www.microsemi.com
or contact our factory direct.
京公网安备 11010802033920号
EEWORLD
