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MRF5812R2

Description
UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-72
CategoryDiscrete semiconductor    The transistor   
File Size166KB,5 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric View All

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MRF5812R2 Overview

UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-72

MRF5812R2 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerMicrosemi
Parts packaging codeSOIC
package instructionSMALL OUTLINE, R-PDSO-G8
Contacts8
Reach Compliance Codeunknow
ECCN codeEAR99
Is SamacsysN
Other featuresLOW NOISE
Maximum collector current (IC)0.2 A
Collector-based maximum capacity2 pF
Collector-emitter maximum voltage15 V
ConfigurationSINGLE
Minimum DC current gain (hFE)50
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeR-PDSO-G8
JESD-609 codee0
Number of components1
Number of terminals8
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)1.25 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN LEAD
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)5000 MHz
Base Number Matches1
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
MRF555
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
Features
Specified @ 12.5 V, 470 MHz Characteristics
Output Power = 1.5 W
Minimum Gain = 11 dB
Efficiency 60% (Typ)
Cost Effective PowerMacro Package
Electroless Tin Plated Leads for Improved Solderability
Power Macro
Designed primarily for wideband large signal stages in
the UHF frequency range.
DESCRIPTION:
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25
°
C)
Symbol
V
CEO
V
CBO
V
EBO
I
C
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Value
16
30
3.0
500
Unit
Vdc
Vdc
Vdc
mA
Thermal Data
P
D
Total Device Dissipation @ TC = 75ºC
Derate above 75ºC
3.0
40
Watts
mW/ ºC
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