2SC4126MI datasheet, PDF - EEWORLD Datasheet

2SC4126MI: DescriptionRF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Silicon, NPN; CategoryDiscrete semiconductor The transistor; File Size101KB，1 Pages; ManufacturerHitachi （Renesas ）; Websitehttp://www.renesas.com/eng/

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2SC4126MI Overview

RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Silicon, NPN

Parameter Name	Attribute value
package instruction	SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum collector current (IC)	0.05 A
Collector-based maximum capacity	1.5 pF
Collector-emitter maximum voltage	11 V
Configuration	SINGLE
JESD-30 code	R-PDSO-G4
Number of components	1
Number of terminals	4
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	6000 MHz
Base Number Matches	1

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