Ordering number : EN3188A
2SA1740 / 2SC4548
SANYO Semiconductors
DATA SHEET
2SA1740 / 2SC4548
Features
•
•
•
PNP Epitaxial Planar Silicon Transistor
NPN Triple Diffuesd Planar Silicon Transistor
High-Voltage Driver Applications
High breakdown votlage.
Adoption of MBIT process.
Excellent hFE linearlity.
Specifications
( ) : 2SA1740
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Mounted on a ceramic board (250mm
✕0.8mm)
2
Conditions
Ratings
(--)400
(--)400
(--)5
(--)200
(--)400
1.3
150
--55 to +150
Unit
V
V
V
mA
mA
W
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Symbol
ICBO
IEBO
hFE
Conditions
VCB=(--)300V, IE=0A
VEB=(-
-)4V, IC=0A
VCE=(--)10V, IC=(--)50mA
60*
Ratings
min
typ
max
(--)0.1
(--)0.1
200*
Unit
μA
μA
Marking 2SA1740 : AK
2SC4548 : CN
*:
The 2SA1740 / 2SC4548 are classified by 50mA hFE as follows:
Rank
D
E
hFE
60 to 120
100 to 200
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
www.semiconductor-sanyo.com/network
33110CB TK IM / 40804TN (PC)/83098HA (KT)/7219YT, TS No.3188-1/4
2SA1740 / 2SC4548
Continued from preceding page.
Parameter
Gain-Bandwidth Product
Output Capacitance
Reverse Transfer Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Turn-DFF Time
Symbol
fT
Cob
Cre
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
toff
Conditions
VCE=(--)30V, IC=(--)10mA
VCB=(--)30V, f=1MHz
VCB=(--)30V, f=1MHz
IC=(-
-)50mA, IB=(-
-)5mA
IC=(-
-)50mA, IB=(-
-)5mA
IC=(-
-)10μA, IE=0A
IC=(-
-)1mA, RBE=∞
IE=(-
-)10μA, IC=0A
See specified Test Circuit.
See specified Test Circuit.
(--)400
(--)400
(--)5
0.25
5.0
Ratings
min
typ
70
(5)4
(4)3
(-
-0.8)0.6
(--)1.0
max
Unit
MHz
pF
pF
V
V
V
V
V
μs
μs
Package Dimensions
unit : mm (typ)
7007B-004
Switching Time Test Circuit
IB1
INPUT
IB2
RB
VR
PW=20μs
D.C.≤1%
+
50Ω
100μF
+
470μF
VCC=150V
OUTPUT
RL
VBE=--1V
IC=10IB1= --10IB2=50mA
RL=3kΩ, RB=200Ω at IC=50mA
For PNP, the polarity is reversed
--120
IC -- VBE
2SA1740
VCE=--10V
120
IC -- VBE
2SC4548
VCE=10V
--100
100
Collector Current, IC -- mA
--80
Collector Current, IC -- mA
80
--60
Ta=70
°
C
25
°
C
--30
°
C
60
--40
40
--20
20
0
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
--1.4
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Base-to-Emitter Voltage, VBE -- V
ITR04445
Base-to-Emitter Voltage, VBE -- V
Ta=70
°
C
25
°
C
--30
°
C
ITR04446
No.3188-2/4
2SA1740 / 2SC4548
5
3
2
hFE -- IC
2SA1740
VCE=--10V
Ta=70
°
C
5
3
2
hFE -- IC
Ta=70
°
C
25
°
C
--30
°
C
2SC4548
VCE=10V
DC Current Gain, hFE
100
7
5
3
2
25
°
C
--30
°
C
DC Current Gain, hFE
2
3
5
7 --100
2
3
100
7
5
3
2
10
7
5
7 --1.0
2
3
5
7 --10
10
7
5
7 1.0
2
3
5
7 10
2
3
5
7 100
2
3
Collector Current, IC -- mA
5
3
ITR04447
5
3
VCE(sat) -- IC
Collector Current, IC -- mA
ITR04448
VCE(sat) -- IC
2SA1740
IC / IB=10
2SC4548
IC / IB=10
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
2
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
2
--1.0
7
5
3
2
1.0
7
5
3
2
--0.1
7
5
7 --1.0
Ta=70
°
C
25
°
C
2
3
5
7 --10
C
--30
°
2
3
5
7 --100
2
ITR04449
0.1
7
5
7 1.0
Ta=70
°
C
2
3
5
7
10
°
C
--30
°
C,
25
2
3
5
7 100
2
ITR04450
Collector Current, IC -- mA
7
5
VBE(sat) -- IC
Collector Current, IC -- mA
7
5
VBE(sat) -- IC
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
3
2
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
2SA1740
IC / IB=10
2SC4548
IC / IB=10
3
2
--1.0
Ta=--30
°
C
7
5
25
°
C
1.0
Ta=--30
°
C
7
5
25
°
C
70
°
C
70
°
C
3
7 --1.0
2
3
5
7 --10
2
3
5
7 --100
2
3
3
7 1.0
2
3
5
7
10
2
3
5
7 100
2
3
Collector Current, IC -- mA
10
7
5
ITR04451
10
SW Time -- IC
Collector Current, IC -- mA
ITR04452
SW Time -- IC
tst
g
tstg
2SA1740
7
5
2SC4548
Switching Time, SW Time --
μs
3
2
1.0
7
5
3
2
0.1
7
5
3
Switching Time, SW Time --
μs
3
2
1.0
7
5
3
2
0.1
7
5
tf
tf
to
n
to
n
VCC=--150V
--10IB1=10IB2=IC
5
7
--10
2
3
5
7 --100
2
3
5
VCC=--150V
10IB1=--10IB2=IC
3
5
7
10
2
3
5
7
100
2
3
5
Collector Current, IC -- mA
ITR04453
Collector Current, IC -- mA
ITR04454
No.3188-3/4
2SA1740 / 2SC4548
7
5
3
2
ASO
ICP=400mA
IC=200mA
1.6
PC -- Ta
2SA1740 / 2SC4548
2SA1740 / 2SC4548
1.4
Collector Dissipation, PC -- W
s
1m
Collector Current, IC -- mA
100
7
5
3
2
10
7
5
3
2
1.0
7
5
1.2
1.0
0.8
0.6
0.4
0.2
0
ms
10
DC
op
era
tio
n
For PNP, minus sign is omitted
Single pulse Ta=25
°
C
Mounted on a ceramic board (250mm
2
✕0.8mm)
2
3
5
7
10
2
3
5
7 100
2
3
5
Collector-to-Emitter Voltage, VCE -- V
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise,
without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s
intellectual property rights which has resulted from the use of the technical information and products mentioned
above.
This catalog provides information as of March, 2010. Specifications and information herein are subject
to change without notice.
PS No.3188-4/4
10
0m
s
ITR04455
Mounted on a ceramic board (250mm
2
✕0.8mm)
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta --
°C
ITR04456
Microcontroller MCU
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