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TL750M, TL751M SERIES
LOW-DROPOUT VOLTAGE REGULATORS
SLVS021H – JANUARY 1988 – REVISED JANUARY 2000
D
D
D
Very Low Dropout Voltage, Less Than 0.6 V
at 750 mA
Low Quiescent Current
TTL- and CMOS-Compatible Enable on
TL751M Series
D
D
D
D
60-V Load-Dump Protection
Overvoltage Protection
Internal Thermal Overload Protection
Internal Overcurrent-Limiting Circuitry
description
The TL750M and TL751M series are low-dropout positive voltage regulators specifically designed for
battery-powered systems. The TL750M and TL751M series incorporate onboard overvoltage and
current-limiting protection circuitry to protect the devices and the regulated system. Both series are fully
protected against 60-V load-dump and reverse-battery conditions. Extremely low quiescent current, even
during full-load conditions, makes the TL750M and TL751M series ideal for standby power systems.
The TL750M and TL751M series offers 5-V, 8-V, 10-V, and 12-V options. The TL751M series has the addition
of an enable (ENABLE) input. The ENABLE input gives the designer complete control over power up, allowing
sequential power up or emergency shutdown. When ENABLE is high, the regulator output is placed in the
high-impedance state. The ENABLE input is TTL- and CMOS-compatible.
The TL750MxxC and TL751MxxC are characterized for operation over the virtual junction temperature range
0°C to 125°C.
AVAILABLE OPTIONS
PACKAGED DEVICES
TJ
VO
TYP
(V)
5
0°C to 125°C
8
10
12
HEAT-SINK
MOUNTED
(3-PIN)
(KC)
TL750M05CKC
TL750M08CKC
TL750M10CKC
TL750M12CKC
PLASTIC
FLANGE MOUNT
(KTE)
TL750M05CKTE
TL750M08CKTE
TL750M10CKTE
TL750M12CKTE
PLASTIC
FLANGE MOUNT
(KTG)
TL751M05CKTG
TL751M08CKTG
TL751M10CKTG
TL751M12CKTG
PLASTIC
FLANGE MOUNT
(KTP)
TL750M05CKTPR
TL750M08CKTPR
TL750M10CKTPR
TL750M12CKTPR
CHIP
FORM
(Y)
TL750M05Y
TL750M08Y
TL750M10Y
TL750M12Y
The KTE and KTG packages are available taped and reeled. The KTP is only available taped and reeled. Add the suffix R to device
type (e.g., TL750M05CKTER). Chip forms are tested at 25°C.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
Copyright
©
2000, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
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1
TL750M, TL751M SERIES
LOW-DROPOUT VOLTAGE REGULATORS
SLVS021H – JANUARY 1988 – REVISED JANUARY 2000
TL750M . . . KC PACKAGE†
(TOP VIEW)
TL750M . . . KTE PACKAGE†
(TOP VIEW)
OUTPUT
COMMON
INPUT
TO-220AB
OUTPUT
COMMON
INPUT
O
C
I
O
C
I
TL750M . . . KTP PACKAGE†
(TOP VIEW)
TL751M . . . KTG PACKAGE†
(TOP VIEW)
OUTPUT
COMMON
COMMON
INPUT
O
NC
OUTPUT
COMMON
INPUT
ENABLE
N
C
I
O
C
I
E
† The common terminal is in electrical contact with the mounting base.
NC – No internal connection
TL751Mxx functional block diagram
INPUT
ENABLE
Enable
Current
Limiting
DEVICE
COMPONENT
COUNT
Transistors
Diodes
28 V
Bandgap
_
+
Overvoltage/
Thermal
Shutdown
COMMON
OUTPUT
Resistors
Capacitors
JFETs
Tunnels
(emitter R)
46
14
44
4
1
2
2
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DALLAS, TEXAS 75265
TL750M, TL751M SERIES
LOW-DROPOUT VOLTAGE REGULATORS
SLVS021H – JANUARY 1988 – REVISED JANUARY 2000
absolute maximum ratings over virtual junction temperature range (unless otherwise noted)
†
Continuous input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 V
Transient input voltage (see Figure 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 V
Continuous reverse input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –15 V
Transient reverse input voltage: t = 100 ms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –50 V
Package thermal impedance,
θ
JA
(see Notes 1 and 2): KC package . . . . . . . . . . . . . . . . . . . . . . . . . . . 22°C/W
KTE package . . . . . . . . . . . . . . . . . . . . . . . . . 23°C/W
KTG package . . . . . . . . . . . . . . . . . . . . . . . . . 23°C/W
KTP package . . . . . . . . . . . . . . . . . . . . . . . . . 28°C/W
Virtual junction temperature range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0°C to 150°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C
Storage temperature range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65°C to 150°C
† Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTES: 1. Maximum power dissipation is a function of TJ(max),
θ
JA, and TA. The maximum allowable power dissipation at any allowable
ambient temperature is PD = (TJ(max) – TA)/
θ
JA. Operating at the absolute maximum TJ of 150°C can impact reliability. Due to
variation in individual device electrical characteristics and thermal resistance, the built-in thermal overload protection may be
activated at power levels slightly above or below the rated dissipation.
2. The package thermal impedance is calculated in accordance with JESD 51.
recommended operating conditions
MIN
TL75xM05
Input voltage range, VI
range
TL75xM08
TL75xM10
TL75xM12
High-level ENABLE input voltage, VIH
Low-level ENABLE input voltage, VIL
Output current range, IO
Operating virtual junction temperature range, TJ
TL751Mxx
TL751Mxx
TL75xMxxC
TL75xMxxC
0
6
9
11
13
2
0
MAX
26
26
26
26
15
0.8
750
125
V
V
mA
°C
V
UNIT
electrical characteristics, V
I
= 14 V, I
O
= 300 mA, T
J
= 25
°
C
PARAMETER
Response time, ENABLE to output
TL751MXXX
MIN
TYP
50
MAX
UNIT
µs
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3
TL750M, TL751M SERIES
LOW-DROPOUT VOLTAGE REGULATORS
SLVS021H – JANUARY 1988 – REVISED JANUARY 2000
electrical characteristics, V
I
= 14 V, I
O
= 300 mA, ENABLE at 0 V for TL751M05, T
J
= 25
°
C (unless
otherwise noted) (see Note 3)
PARAMETER
TEST CONDITIONS
TL750M05C
TL751M05C
MIN
Output voltage
Input voltage regulation
Ripple rejection
Output voltage regulation
Dropout voltage
Output noise voltage
Bias current
Bias current (TL751M05C and TL751M05Q only)
4.95
TJ = 0°C to 125°C
VI = 9 V to 16 V,
VI = 6 V to 26 V,
VI = 8 V to 18 V,
IO = 5 mA to 750 mA
IO = 500 mA
IO = 750 mA
f = 10 Hz to 100 kHz
IO = 750 mA
IO = 10 mA
ENABLE VIH
≥
2 V
4.9
IO = 250 mA
IO = 250 mA
f = 120 Hz
50
10
12
55
20
50
0.5
0.6
500
60
75
5
200
TYP
5
MAX
5.05
5.1
25
50
V
mV
dB
mV
V
µV
mA
µA
UNIT
NOTE 3: Pulse-testing techniques maintain the junction temperature as close to the ambient temperature as possible. Thermal effects must be
taken into account separately. All characteristics are measured with a 0.1-µF capacitor across the input and a 10-µF tantalum capacitor
on the output, with equivalent series resistance within the guidelines shown in Figure 3.
electrical characteristics, V
I
= 14 V, I
O
= 300 mA, ENABLE at 0 V for TL751M08, T
J
= 25
°
C (unless
otherwise noted) (see Note 3)
PARAMETER
TEST CONDITIONS
TL750M08C
TL751M08C
MIN
Output voltage
Input voltage regulation
Ripple rejection
Output voltage regulation
Dropout voltage
Output noise voltage
Bias current
Bias current (TL751Mxx only)
7.92
TJ = 0°C to 125°C
VI = 10 V to 17 V,
VI = 9 V to 26 V,
VI = 11 V to 21 V,
IO = 5 mA to 750 mA
IO = 500 mA
IO = 750 mA
f = 10 Hz to 100 kHz
IO = 750 mA
IO = 10 mA
ENABLE VIH
≥
2 V
7.84
IO = 250 mA
IO = 250 mA
f = 120 Hz
50
12
15
55
24
80
0.5
0.6
500
60
75
5
200
TYP
8
MAX
8.08
8.16
40
68
V
mV
dB
mV
V
µV
mA
µA
UNIT
NOTE 3: Pulse-testing techniques maintain the junction temperature as close to the ambient temperature as possible. Thermal effects must be
taken into account separately. All characteristics are measured with a 0.1-µF capacitor across the input and a 10-µF tantalum capacitor
on the output, with equivalent series resistance within the guidelines shown in Figure 3.
4
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