SCS521S
Elektronische Bauelemente
RoHS Compliant Product
Schottky Barrier Diode
FEATURES
.
.
.
.
.
A suffix of "-C" specifies halogen & lead-free
SOD-523
Low current rectification and high speed switching
CATHODE MARK
MECHANICAL DATA
Extremely small surface mounting type. (EMD2)
Io=200mA guaranteed despite the size.
Low V
F
.(V
F
=0.40V Typ. At 200mA)
Silicon epitaxial planer
1.2±0.05
1.6±0.1
0.8±0.05
0.6±0.1
Dimensions in millimeters
C
0.3±0.05
0.12±0.05
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted)
Rating
DC reverse voltage
Mean rectifying current
Peak forward surge current
Junction Temperature
Storage Temperature Range
Symbol
VR
Io
IFSM
TJ
Tstg
Value
30
200
1
125
– 40 to +125
Unit
Volts
mA
A
°
C
°
C
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted) (EACH DIODE)
Characteristic
Forward voltage ( IF = 200mA)
Reverse current ( V
R
= 10V)
Symbol
VF
IR
Min
–
–
Typ
–
–
Max
0.50
30
Unit
Volts
mA
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individua l
01-Jul-2009 Rev. B
Page 1 of 2
SCS521S
Elektronische Bauelemente
Schottky Barrier Diode
Electrical characteristic curves
(Ta=25 C)
1
FORWARD CURRENT : I
F
(A)
10m
Ta=125°C
REVERSE CURRENT : I
R
(A)
100m
5
°
C
1m
75°C
100
m
10
m
1
m
100n
10n
-25 °C
25°C
1
2
°
C
10m
1m
100µ
10µ
1µ
0
T
a
=
7
5
2
5
0.1
0.2
-
2
5
°
C
0.3
°
C
0.4
0.5
0.6
0
10
20
30
FORWARD VOLTAGE : V
F
(V)
REVERSE VOLTAGE : V
R
(V)
Figure 1. Forward characteristics
Figure 2. Reverse characteristics
CAPACITANCE BETWEEN TERMINALS : C
T
(pF)
100
50
Ta=25
°
C
f=1MHz
100
Io CURRENT (%)
20
10
5
80
60
40
20
2
1
0
2
4
6
8
10
12
14
REVERSE VOLTAGE : V
R
(V)
0
0
25
50
75
100
125
AMBIENT TEMPERATURE : Ta (°C)
Fig. 3 Capacitance between
terminals characteristics
Fig. 4 Derating curve
(mounting on glass epoxy PCBs)
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jul-2009 Rev. A
Page 2 of 2
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