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SFG20SD200F

Description
Voltage 50V ~ 600V 20.0 Amp Super Fast Rectifier
CategoryDiscrete semiconductor    diode   
File Size291KB,3 Pages
ManufacturerSECOS
Websitehttp://www.secosgmbh.com/
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SFG20SD200F Overview

Voltage 50V ~ 600V 20.0 Amp Super Fast Rectifier

SFG20SD200F Parametric

Parameter NameAttribute value
MakerSECOS
package instructionR-PSFM-T3
Reach Compliance Codecompliant
ECCN codeEAR99
applicationEFFICIENCY
Shell connectionISOLATED
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.975 V
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Maximum non-repetitive peak forward current200 A
Number of components2
Phase1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current10 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Maximum repetitive peak reverse voltage200 V
Maximum reverse current10 µA
Maximum reverse recovery time0.035 µs
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
SFG20SD50F ~ SFG20SD600F
Elektronische Bauelemente
Voltage 50V ~ 600V
20.0 Amp Super Fast Rectifier
RoHS Compliant Product
A suffix of “-C” specifies and halogen free
FEATURES
Fast switching for high efficiency
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
ITO-220Y
B
N
D
E
M
A
MECHANICAL DATA
Case:Molded plastic ITO-220Y
Epoxy:UL 94V-0 rate flame retardant
Terminals:Solderable per MIL-STD-202
method 208
Polarity:Color band denotes cathode
Mounting position:Any
Weight:1.81 grams
H
K
L
Millimeter
Min.
Max.
14.80
15.20
9.50
10.50
12.40
14.30
4.30
4.70
2.80
3.20
2.40
2.90
C
G
F
REF.
G
H
K
L
M
N
Millimeter
Min.
Max.
0.30
0.70
3.50
3.41
0.50
0.65
2.35
2.70
2.50
2.80
φ
3.2
φ
3.6
L
REF.
1
3
2
A
B
C
D
E
F
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Rating at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, de-rate current by 20%.)
Part Number
Parameters
Maximum Recurrent Peak Reverse
Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current T
C
=125°C
Peak Forward Surge Current,8.3ms
single Half sine-wave superimposed
on rated load (JEDEC method)
Maximum Instantaneous Forward
Voltage @ 10.0A
Maximum DC Reverse
Current
At Rated DC Blocking
Voltage
T
J
=25°C
I
R
T
J
=125°C
1
Symbol
SFG
20SD50F
SFG
20SD100F
SFG
20SD200F
SFG
20SD300F
SFG
20SD400F
SFG
20SD600F
Unit
V
RRM
V
RMS
V
DC
I
F(AV)
50
35
50
100
70
100
200
140
200
20
300
210
300
400
280
400
600
420
600
V
V
V
A
I
FSM
200
175
A
V
F
0.975
10
1.3
1.5
V
µA
250
Maximum Reverse Recovery Time
Typical Junction Capacitance
Temperature Range
2
T
RR
C
J
T
J
, T
STG
35
120
-55~150
50
70
nS
pF
°C
Operating Junction and Storage
Notes:
1. Reverse recovery test conditions I
F
= 0.5A, I
R
= 1.0A, I
RR
= 0.25A.
http://www.SeCoSGmbH.com/
MHz and applied reverse voltage of 4.0 Volts DC.
2. Measured at 1.0
3. Thermal Resistance junction to case.
Any changes of specification will not be informed individually.
09-May-2011 Rev. A
Page 1 of 2

SFG20SD200F Related Products

SFG20SD200F SFG20SD400F SFG20SD600F SFG20SD100F SFG20SD300F SFG20SD50F
Description Voltage 50V ~ 600V 20.0 Amp Super Fast Rectifier Voltage 50V ~ 600V 20.0 Amp Super Fast Rectifier Voltage 50V ~ 600V 20.0 Amp Super Fast Rectifier Voltage 50V ~ 600V 20.0 Amp Super Fast Rectifier Voltage 50V ~ 600V 20.0 Amp Super Fast Rectifier Voltage 50V ~ 600V 20.0 Amp Super Fast Rectifier
Maker SECOS SECOS - SECOS SECOS SECOS
package instruction R-PSFM-T3 R-PSFM-T3 - R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
Reach Compliance Code compliant compliant - compliant compliant compliant
ECCN code EAR99 EAR99 - EAR99 EAR99 EAR99
application EFFICIENCY EFFICIENCY - EFFICIENCY EFFICIENCY EFFICIENCY
Shell connection ISOLATED ISOLATED - ISOLATED ISOLATED ISOLATED
Configuration COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS - COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS
Diode component materials SILICON SILICON - SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE - RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 0.975 V 1.3 V - 0.975 V 1.3 V 0.975 V
JEDEC-95 code TO-220AB TO-220AB - TO-220AB TO-220AB TO-220AB
JESD-30 code R-PSFM-T3 R-PSFM-T3 - R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
Maximum non-repetitive peak forward current 200 A 175 A - 200 A 175 A 200 A
Number of components 2 2 - 2 2 2
Phase 1 1 - 1 1 1
Number of terminals 3 3 - 3 3 3
Maximum operating temperature 150 °C 150 °C - 150 °C 150 °C 150 °C
Minimum operating temperature -55 °C -55 °C - -55 °C -55 °C -55 °C
Maximum output current 10 A 10 A - 10 A 10 A 10 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT - FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Maximum repetitive peak reverse voltage 200 V 400 V - 100 V 300 V 50 V
Maximum reverse current 10 µA 10 µA - 10 µA 10 µA 10 µA
Maximum reverse recovery time 0.035 µs 0.035 µs - 0.035 µs 0.035 µs 0.035 µs
surface mount NO NO - NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE - THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE - SINGLE SINGLE SINGLE
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