SMG2301P
Elektronische Bauelemente
-2.6 A, -20 V, R
DS(ON)
130 m
P-Channel Enhancement MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The miniature surface mount MOSFETs utilize a high cell
density trench process to provide low R
DS(on)
and to ensure
minimal power loss and heat dissipation.Typical applications
are DC-DC converters and power management in portable
and battery-powered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.
A
3
SC-59
L
3
Top View
1
2
C B
1
2
K
E
D
FEATURES
Low R
DS(on)
provides higher efficiency and extends
battery life.
Low thermal impedance copper leadframe SC-59
saves board space.
Fast switching speed.
High performance trench technology.
F
G
Millimeter
Min.
Max.
2.70
3.10
2.25
3.00
1.30
1.70
1.00
1.40
1.70
2.30
0.35
0.50
REF.
A
B
C
D
E
F
H
Millimeter
Min.
Max.
0.10 REF.
0.40 REF.
0.10
0.20
0.45
0.55
0.85
1.15
J
REF.
G
H
J
K
L
PACKAGE INFORMATION
Package
SC-59
MPQ
3K
LeaderSize
7’ inch
Gate
Drain
Source
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
1
Symbol
V
DS
V
GS
T
A
=25°C
T
A
=70°C
I
D
I
DM
I
S
P
D
T
J
, T
STG
Ratings
-20
±8
-2.6
-1.5
-10
±1.6
1.25
0.8
-55 ~ 150
100
166
Unit
V
V
A
A
A
W
°C
Pulsed Drain Current
2
Continuous Source Current (Diode Conduction)
1
T
A
=25°C
T
A
=70°C
Operating Junction and Storage Temperature Range
Power Dissipation
1
t≦5 sec
Steady-State
Thermal Resistance Ratings
Maximum Junction to Ambient
1
R
θJA
°C/W
Notes:
1.
Surface Mounted on 1” x 1” FR4 Board.
2.
Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
14-Jan-2011 Rev. B
Page 1 of 4
SMG2301P
Elektronische Bauelemente
-2.6 A, -20 V, R
DS(ON)
130 m
P-Channel Enhancement MOSFET
ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise specified)
Parameter
Symbol
Min.
Static
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
1
Drain-Source On-Resistance
Forward Transconductance
1
Diode Forward Voltage
1
Typ.
Max.
Unit
Teat Conditions
V
GS(th)
I
GSS
I
DSS
I
D(ON)
R
DS(ON)
g
FS
V
SD
-0.4
-
-
-
-3
-
-
-
-
-
-
-
-
-
-
-
3
-0.70
-1
±100
-1
-10
-
0.130
0.190
-
-
V
nA
μA
A
Ω
S
V
V
DS
= V
GS
, I
D
= -250μA
V
DS
= 0V, V
GS
= ±8V
V
DS
= -16V, V
GS
= 0V
V
DS
= -16V, V
GS
= 0V, T
J
=55°C
V
DS
= -5V, V
GS
= -4.5V
V
GS
= -4.5V, I
D
= -2.6A
V
GS
= -2.5V, I
D
= -2.1A
V
DS
= -5V,
,
I
D
= -2.8A
I
S
= -1.6A, V
GS
= 0V
Dynamic
2
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Q
g
Q
gs
Q
gd
Td
(ON)
T
r
Td
(OFF)
T
f
-
-
-
-
-
-
-
12.2
1.1
1.5
6.5
20
31
21
-
-
-
-
-
-
-
nS
V
DD
= -5V
V
GEN
= -4.5V
R
G
= 6Ω
R
L
= 5Ω
nC
I
D
= -2.6A
V
DS
= -5V
V
GS
= -4.5V
Notes:
1.
Pulse test：PW
≦
300 us duty cycle
≦
2%.
2.
Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
14-Jan-2011 Rev. B
Page 2 of 4
SMG2301P
Elektronische Bauelemente
-2.6 A, -20 V, R
DS(ON)
130 m
P-Channel Enhancement MOSFET
CHARACTERISTIC CURVE
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
14-Jan-2011 Rev. B
Page 3 of 4
SMG2301P
Elektronische Bauelemente
-2.6 A, -20 V, R
DS(ON)
130 m
P-Channel Enhancement MOSFET
CHARACTERISTIC CURVE
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
14-Jan-2011 Rev. B
Page 4 of 4
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