SMG2306N
Elektronische Bauelemente
3.5A , 30V , R
DS(ON)
58 m
N-Channel Enhancement Mode Mos.FET
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize
High Cell Density process. Low R
DS(on)
assures minimal
power loss and conserves energy, making this device
ideal for use in power management circuitry.
A
3
SC-59
L
3
Top View
C B
1
2
2
FEATURES
1
Low R
DS(on)
provides higher efficiency and
extends battery life.
Low gate charge
Fast switching
Miniature SC-59 surface mount package
saves board space.
K
E
D
F
G
H
J
REF.
A
B
C
D
E
F
APPLICATION
PWMDC-DC converters, power management
in portable and battery-powered products such as
computers, printers, battery charger, telecommunication
power system, and telephones power system.
Millimeter
Min.
Max.
2.70
3.10
2.25
3.00
1.30
1.70
1.00
1.40
1.70
2.30
0.35
0.50
REF.
G
H
J
K
L
Millimeter
Min.
Max.
0.10 REF.
0.40 REF.
0.10
0.20
0.45
0.55
0.85
1.15
PACKAGE INFORMATION
Package
SC-59
MPQ
3K
LeaderSize
7’ inch
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C unless otherwise specified)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
1
Pulsed Drain Current
2
Symbol
V
DS
V
GS
I
D
@ T
A
=25°C
I
D
@ T
A
=70°C
Rating
30
±20
3.5
2.8
16
1.25
1.3
0.8
-55 ~ 150
Unit
V
V
A
A
A
A
W
W
°C
I
D
I
DM
I
S
Continuous Source Current (Diode Conduction)
1
Power Dissipation
1
Operating Junction and Storage Temperature Range
P
D
@ T
A
=25°C
P
D
@ T
A
=70°C
P
D
Tj, Tstg
Thermal Resistance Rating
Maximum Junction to Ambient
1
Notes:
1 Surface Mounted on 1” x 1” FR4 Board.
2 Pulse width limited by maximum junction temperature.
t
≦
10 sec
Steady State
R
JA
100
166
°C
/ W
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
12-Apr-2011 Rev. B
Page 1 of 4
SMG2306N
Elektronische Bauelemente
3.5A , 30V , R
DS(ON)
58 m
N-Channel Enhancement Mode Mos.FET
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
1
Drain-Source On-Resistance
1
Forward Transconductance
1
Diode Forward Voltage
Symbol
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(ON)
g
fs
V
SD
Min.
1.0
-
-
-
6
-
-
-
-
Typ.
-
-
-
-
-
-
-
6.9
0.8
Max.
-
±100
1
25
-
58
82
-
-
Unit
V
nA
uA
A
mΩ
S
V
Test Condition
V
DS
=V
GS
, I
D
=250uA
V
DS
=0, V
GS
=20V
V
DS
=24V, V
GS
=0
V
DS
=24V, V
GS
=0, T
J
= 55°C
V
DS
=5V, V
GS
=10V
V
GS
=10V, I
D
=3.5A
V
GS
=4.5V, I
D
=3A
V
DS
=15V, I
D
=3.5A
I
S
=2.3A, V
GS
=0
Static
Dynamic
2
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
-
-
-
-
-
-
-
2.2
0.5
0.8
16
5
23
3
-
-
-
-
-
-
-
nS
V
DD
=25V, V
GEN
=10V,
R
L
=25, I
D
=1A
nC
V
DS
=15V, V
GS
=4.5V,
I
D
=3.5A
Notes:
1
Pulse test：PW
≦
300 us duty cycle
≦
2%.
2 Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
12-Apr-2011 Rev. B
Page 2 of 4
SMG2306N
Elektronische Bauelemente
3.5A , 30V , R
DS(ON)
58 m
N-Channel Enhancement Mode Mos.FET
CHARACTERISTIC CURVE
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
12-Apr-2011 Rev. B
Page 3 of 4
SMG2306N
Elektronische Bauelemente
3.5A , 30V , R
DS(ON)
58 m
N-Channel Enhancement Mode Mos.FET
CHARACTERISTIC CURVE
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
12-Apr-2011 Rev. B
Page 4 of 4
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