SMG2310N
Elektronische Bauelemente
2.2A, 30V, R
DS(ON)
65 m
N-Channel Enhancement Mode MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize High Cell
Density process. Low R
DS(on)
assures minimal power loss and
conserves energy, making this device ideal for use in power
management circuitry. Typical applications are lower voltage
application, power management in portable and battery-powered
products such as computers, printers, PCMCIA cards, cellular and
cordless telephones.
A
3
SC-59
L
3
Top View
1
2
C B
1
2
K
E
D
FEATURES
F
G
H
J
Low R
DS(on)
provides higher efficiency and extends
battery life.
Low gate charge
Fast switch
REF.
A
B
C
D
E
F
PACKAGE INFORMATION
Package
SC-59
MPQ
3K
LeaderSize
7’ inch
Millimeter
Min.
Max.
2.70
3.10
2.25
3.00
1.30
1.70
1.00
1.40
1.70
2.30
0.35
0.50
REF.
G
H
J
K
L
Millimeter
Min.
Max.
0.10 REF.
0.40 REF.
0.10
0.20
0.45
0.55
0.85
1.15
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
1
Pulsed Drain Current
2
Continuous Source Current (Diode Conduction)
1
Power Dissipation
1
Operating Junction and Storage Temperature Range
P
D
@ T
A
=25°C
P
D
@ T
A
=70°C
I
D
@ T
A
=25°C
I
D
@ T
A
=70°C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
Tj, Tstg
Rating
30
±8
2.2
1.7
10
0.45
0.5
0.42
-55 ~ 150
Unit
V
V
A
A
A
A
W
W
°C
Thermal Resistance Ratings
Maximum Junction to Ambient
1
Notes:
1
2
t
≦
5 sec
Steady State
R
JA
250
285
°C
/ W
Surface Mounted on 1” x 1” FR4 Board.
Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
11-Feb-2011 Rev. A
Page 1 of 4
SMG2310N
Elektronische Bauelemente
2.2A, 30V, R
DS(ON)
65 m
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Symbol
V
(BR)DSS
I
GSS
I
DSS
Min.
30
-
-
-
0.43
10
-
Drain-Source On-Resistance
1
Forward Transconductance
1
Diode Forward Voltage
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
R
DS(ON)
g
fs
V
SD
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
0.7
-
54
80
70
13
0.65
7
1.1
1.9
4
11
18
5
Max.
-
±100
1
10
1
-
65
99
82
-
1.2
9
-
-
11
19
30
10
nS
V
DS
=10V, V
GEN
=4.5V,
R
G
=6, I
D
=1A
nC
S
V
mΩ
nA
μA
Unit
Test Conditions
V
GS
=0, I
D
=250μA
V
DS
=0, V
GS
= ±8V
V
DS
=24V, V
GS
=0
V
DS
=24V, V
GS
=0, T
J
=55°C
V
DS
=V
GS
, I
D
=250μA
V
DS
=5V, V
GS
=4.5V
V
GS
=4.5V, I
D
=2.2A
V
GS
=4.5V, I
D
=2.2A, T
J
=55°C
V
GS
=2.5V, I
D
=2A
V
DS
=5V, I
D
=2.2A
I
S
=0.45A, V
GS
=0
Switch Off Characteristics
Switch On Characteristics
Gate-Threshold Voltage
On-State Drain Current
1
V
GS(th)
I
D(on)
V
A
Dynamic
2
V
DS
=10V, V
GS
=4.5V,
I
D
= 2.2A
Switching
Notes:
1 Pulse test：PW
≦
300 us duty cycle
≦
2%.
2 Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
11-Feb-2011 Rev. A
Page 2 of 4
SMG2310N
Elektronische Bauelemente
2.2A, 30V, R
DS(ON)
65 m
N-Channel Enhancement Mode MOSFET
CHARACTERISTIC CURVE
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
11-Feb-2011 Rev. A
Page 3 of 4
SMG2310N
Elektronische Bauelemente
2.2A, 30V, R
DS(ON)
65 m
N-Channel Enhancement Mode MOSFET
CHARACTERISTIC CURVE
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
11-Feb-2011 Rev. A
Page 4 of 4
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