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UM2106

Description
100 V, SILICON, PIN DIODE
CategoryDiscrete semiconductor    diode   
File Size267KB,7 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric Compare View All

UM2106 Overview

100 V, SILICON, PIN DIODE

UM2106 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerMicrosemi
Reach Compliance Codecompli
ECCN codeEAR99
Minimum breakdown voltage600 V
Maximum diode capacitance2.5 pF
Diode component materialsSILICON
Maximum diode forward resistance2 Ω
Diode typePIN DIODE
JESD-609 codee0
Minority carrier nominal lifetime60 µs
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation25 W
Certification statusNot Qualified
technologyPOSITIVE-INTRINSIC-NEGATIVE
Terminal surfaceTIN LEAD
Maximum time at peak reflow temperatureNOT SPECIFIED
UM2100
TM
®
ATTENUATOR AND POWER PIN DIODES
2 – 30 MHz
RoHS Compliant Versions Available
DESCRIPTION
UM2100 Series PIN diodes are designed for transmit/receive switch
and attenuator applications in HF band (2-30MHz) and below. As
series configured switches, these long lifetime (25μs typical) diodes
can control up to 2.5 kW, CW in a 50 ohm system. In HF band,
insertion loss is less than 0.25dB and isolation is greater than 32dB
(off-state).
The UM2100 series offers the lowest distortion performance in both
transmit and receive modes. Less than 50 mA forward bias is requires
to obtain an IP3 of 60 dBm at 300 kHz with 1 watt per tone. The
forward biased resistance/reactance vs. frequency characteristics are
flat down to 10 kHz. The capacitance vs. reverse bias voltage
characteristic is flat down to 2 MHz. In attenuator configuration, the
UM2100 produces extremely low distortion at low values of attenuator
control current, and very low insertion loss (0.2dB) in the “0dB”
attenuator state.
KEY FEATURES
HF band (2-30 MHz) PIN
www.MICROSEMI.com
Long Lifetime (25μs typical)
High Power ( 1kW, CW)
High Isolation (32dB)
Low Loss (0.25dB)
Very Low Distortion
(IP3=60dBm)
Voltage ratings to 1000 V
RoHS compliant packaging
1
Available
(use UMX2101B, etc.)
IMPORTANT:
For the most current data, consult our website:
www.MICROSEMI.com
ABSOLUTE MAXIMUM RATINGS AT 25º C
(UNLESS OTHERWISE SPECIFIED)
Package
A
B
E
C
D
SM
ALL
ALL
ALL
O
Conditions
25 C Pin Temperature
½ in. total length to 25 C
Contact Free Air
25 C Stud Temperature
25 C Stud Temperature
25 C End Cap Temperature
1 us pulse (Single)
Storage Temperature (T
OP
)
Operating Temperature (T
OP
)
O
O
O
(P
D
) Power
Dissapation
(W)
25
12
2.5
25
18.75
15
100KW
(
Θ
)Thermal
Resistance
(
O
C/W)
50V
12.5
The UM2100 series of products can be
supplied with a RoHS compliant finish
(UMX2100) or with a 90/10 Sn/Pb finish.
Consult factory for details.
1
O
6
8
10
APPLICATIONS/BENEFITS
Isolated stud package available
Surface mount package available
Soldering temperature:
o
260 C for 10 seconds
maximum
UM2100
UM2100
-65
O
C to + 175
O
C
-65
O
C to + 175
O
C
Copyright
2007
Rev: 2009-01-19
Microsemi
Microwave Products
Page
1
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748

UM2106 Related Products

UM2106 UM2102 UM2100_09 UM2110 UM2104 UM2108 UM2101
Description 100 V, SILICON, PIN DIODE 100 V, SILICON, PIN DIODE 100 V, SILICON, PIN DIODE 100 V, SILICON, PIN DIODE 100 V, SILICON, PIN DIODE 100 V, SILICON, PIN DIODE 100 V, SILICON, PIN DIODE
Minimum breakdown voltage 600 V 200 V 100 V 1000 V 400 V 800 V 100 V
Maximum diode capacitance 2.5 pF 2.5 pF 2.5 pF 2.5 pF 2.5 pF 2.5 pF 2.5 pF
Diode component materials SILICON SILICON silicon SILICON SILICON SILICON SILICON
Maximum diode forward resistance 2 Ω 2 Ω 2 ohm 2 Ω 2 Ω 2 Ω 2 Ω
Diode type PIN DIODE PIN DIODE PIN diode PIN DIODE PIN DIODE PIN DIODE PIN DIODE
Is it lead-free? Contains lead Contains lead - Contains lead Contains lead Contains lead Contains lead
Is it Rohs certified? incompatible incompatible - incompatible incompatible incompatible incompatible
Maker Microsemi Microsemi - Microsemi Microsemi Microsemi Microsemi
Reach Compliance Code compli compli - compli compli compli compli
ECCN code EAR99 EAR99 - EAR99 EAR99 EAR99 EAR99
JESD-609 code e0 e0 - e0 e0 e0 e0
Minority carrier nominal lifetime 60 µs 60 µs - 60 µs 60 µs 60 µs 60 µs
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Maximum power dissipation 25 W 25 W - 25 W 25 W 25 W 25 W
Certification status Not Qualified Not Qualified - Not Qualified Not Qualified Not Qualified Not Qualified
technology POSITIVE-INTRINSIC-NEGATIVE POSITIVE-INTRINSIC-NEGATIVE - POSITIVE-INTRINSIC-NEGATIVE POSITIVE-INTRINSIC-NEGATIVE POSITIVE-INTRINSIC-NEGATIVE POSITIVE-INTRINSIC-NEGATIVE
Terminal surface TIN LEAD TIN LEAD - TIN LEAD TIN LEAD TIN LEAD TIN LEAD
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
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