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UM4300_09

Description
200 V, SILICON, PIN DIODE
Categorysemiconductor    Discrete semiconductor   
File Size324KB,6 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric Compare View All

UM4300_09 Overview

200 V, SILICON, PIN DIODE

UM4300_09 Parametric

Parameter NameAttribute value
Minimum breakdown voltage200 V
stateACTIVE
terminal coatingTIN LEAD
CraftsmanshipPOSITIVE-INTRINSIC-NEGATIVE
Diode component materialsSILICON
Maximum power consumption limit10 W
Diode typePIN DIODE
Maximum diode capacitance2.2 pF
Maximum diode forward resistance1.5 ohm
Minority Carrier Lifetime Rating6 us
UM4300 / UM7300
SWITCHING / ATTENUATOR PIN DIODES
DESCRIPTION
The UM4300 and UM7300 series combine a diode chip of extremely thick intrinsic
region with a low thermal resistance construction. This results in diodes uniquely
applicable to very low distortion linear attenuators and specialized functions. The
UM4300 series, with large cross-sectional chip area offers the highest power
capability, of the two series. The UM7300 series offers lower capacitance. Both
diode series are intended for use in linear attenuators operating from HF to
beyond 1 GHz. Low distortion is a result of transit time frequencies below 5 MHz.
Operated as RF switches, either diode series can be operated at low dc reverse
bias voltages, to hold off much higher RF voltage levels.
KEY FEATURES
Extremely low distortion performance
Useful frequency range extends below
500 kHz
Power dissipation to 20 W (UM4300)
Capacitance as low as 0.7 pF
(UM7300)
Voltage ratings to 1000V
Non cavity design
Thermally matched
Isolated stud package available
WWW
.
Microsemi
.
C O M
ABSOLUTE MAXIMUM RATINGS AT 25º C
(UNLESS OTHERWISE SPECIFIED)
UM4300
Pkg
A
B&E
C
D
SM
ALL
UM7300
Condition
25 °C Pin Temperature
½ in. total length to 25 °C
Contact Free Air
25 °C Stud Temperature
25 °C Stud Temperature
25 °C End Cap Temperature
1 us pulse (Single)
P
D
(W)
θ
(°C/W)
P
D
(W)
θ
(°C/W)
20
10
2.5
20
15
15
7.5
15
7.5
10
20
500 kW
7.5
4
7.5
6
5.5
20
37.5
20
25
18
100 kW
APPLICATIONS / BENEFITS
RF Switching
RF Attenuators
Pick and Place compatible
Surface Mount Versions
RoHS compliant packaging available:
use UMX4301SM, etc
1
VOLTAGE RATINGS
Reverse Voltage @ 10uA
100
200
600
1000
Part Number
UM4301
UM4302
UM4306
UM4310
UM7301
UM7302
UM7306
UM7310
UM4300 / UM7300
UM4300 / UM7300
IMPORTANT:
For the most current data consult
MICROSEMI’s
website:
www.MICROSEMI.com
1 - RoHS compliant versions of the UM4300 and
UM7300 are available. Specify UMX4300 or UMX7300
for RoHS version. Consult factory for details.
Copyright 2005
Rev: 3/30/2009
Microsemi
Microwave Products
75 Technology Drive, Lowell MA 01851 Tel: (978) 442-5600
Page 1

UM4300_09 Related Products

UM4300_09 UM4302 UM4310 UM4301 UM4306 UM7302 UM7310 UM7301 UM7306
Description 200 V, SILICON, PIN DIODE 200 V, SILICON, PIN DIODE 200 V, SILICON, PIN DIODE 100 V, SILICON, PIN DIODE 200 V, SILICON, PIN DIODE 200 V, SILICON, PIN DIODE 200 V, SILICON, PIN DIODE 200 V, SILICON, PIN DIODE 200 V, SILICON, PIN DIODE
Minimum breakdown voltage 200 V 200 V 1000 V 100 V 600 V 200 V 1000 V 100 V 600 V
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Diode type PIN DIODE PIN DIODE PIN DIODE PIN DIODE PIN DIODE PIN DIODE PIN DIODE PIN DIODE PIN DIODE
Maximum diode capacitance 2.2 pF 2.2 pF 2.2 pF 2.2 pF 2.2 pF 0.7 pF 0.7 pF 0.7 pF 0.7 pF
Maximum diode forward resistance 1.5 ohm 1.5 Ω 1.5 Ω 1.5 Ω 1.5 Ω 3 Ω 3 Ω 3 Ω 3 Ω
Is it lead-free? - Contains lead Contains lead Contains lead Contains lead Contains lead Contains lead Contains lead Contains lead
Is it Rohs certified? - incompatible incompatible incompatible incompatible incompatible incompatible incompatible incompatible
Maker - Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi
Reach Compliance Code - compli compli compli compli compli compli unknow compli
ECCN code - EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
JESD-609 code - e0 e0 e0 e0 e0 e0 e0 e0
Minority carrier nominal lifetime - 6 µs 6 µs 6 µs 6 µs 4 µs 4 µs 4 µs 4 µs
Peak Reflow Temperature (Celsius) - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Maximum power dissipation - 10 W 10 W 10 W 10 W 4 W 4 W 4 W 4 W
Certification status - Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
technology - POSITIVE-INTRINSIC-NEGATIVE POSITIVE-INTRINSIC-NEGATIVE POSITIVE-INTRINSIC-NEGATIVE POSITIVE-INTRINSIC-NEGATIVE POSITIVE-INTRINSIC-NEGATIVE POSITIVE-INTRINSIC-NEGATIVE POSITIVE-INTRINSIC-NEGATIVE POSITIVE-INTRINSIC-NEGATIVE
Terminal surface - TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD
Maximum time at peak reflow temperature - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
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