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BUK9907-40ATC,127

Description
N-channel TrenchPLUS logic level FET
CategoryDiscrete semiconductor    The transistor   
File Size251KB,15 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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BUK9907-40ATC,127 Overview

N-channel TrenchPLUS logic level FET

BUK9907-40ATC,127 Parametric

Parameter NameAttribute value
Brand NameNXP Semiconduc
Is it Rohs certified?conform to
MakerNXP
Parts packaging codeTO-220
package instructionPLASTIC, TO-220, 5 PIN
Contacts5
Manufacturer packaging codeSOT263B
Reach Compliance Code_compli
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)1400 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage40 V
Maximum drain current (Abs) (ID)75 A
Maximum drain current (ID)75 A
Maximum drain-source on-resistance0.0077 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSFM-T5
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals5
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)272 W
Maximum pulsed drain current (IDM)560 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
BUK9907-40ATC
N-channel TrenchPLUS logic level FET
Rev. 02 — 16 February 2009
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. The devices include TrenchPLUS diodes for
clamping, ElectroStatic Discharge (ESD) protection and temperature sensing. This
product has been designed and qualified to the appropriate AEC standard for use in
automotive critical applications.
1.2 Features and benefits
Allows responsive temperature
monitoring due to integrated
temperature sensor
Low conduction losses due to low
on-state resistance
Q101 compliant
1.3 Applications
12 V and 24 V high power motor
drives
Automotive and general purpose
power switching
Electrical Power Assisted Steering
(EPAS)
Protected drive for lamps
1.4 Quick reference data
Table 1.
I
D
P
tot
T
j
R
DSon
Quick reference
Conditions
V
GS
= 5 V; T
mb
= 25 °C; see
Figure 3;
see
Figure 2 [1]
T
mb
= 25 °C; see
Figure 1
Min
-
-
-55
V
GS
= 5 V; I
D
= 50 A; T
j
= 25 °C; see
Figure 7;
see
Figure 8
V
GS
= 4.5 V; I
D
= 50 A; T
j
= 25 °C
V
GS
= 10 V; I
D
= 50 A; T
j
= 25 °C
S
F(TSD)
temperature sense
diode temperature
coefficient
temperature sense
diode forward voltage
[1]
Current is limited by power dissipation chip rating.
Symbol Parameter
drain current
total power dissipation
junction temperature
drain-source on-state
resistance
Typ
-
-
-
5.8
6
5.2
1.54
Max
140
272
175
7
7.7
6.2
1.68
Unit
A
W
°C
mΩ
mΩ
mΩ
mV/K
Static characteristics
-
-
-
1.4
I
F
= 250 µA; T
j
> -55 °C; T
j
< 175 °C
V
F(TSD)
648
658
668
mV
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