BUK7909-75ATE
N-channel TrenchPLUS standard level FET
Rev. 02 — 16 February 2009
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. The devices include TrenchPLUS diodes for
ElectroStatic Discharge (ESD) protection and temperature sensing. This product has been
designed and qualified to the appropriate AEC standard for use in automotive critical
applications.
1.2 Features and benefits
Allows responsive temperature
monitoring due to integrated
temperature sensor
Electrostatically robust due to
integrated protection diodes
Low conduction losses due to low
on-state resistance
Q101 compliant
Suitable for standard level gate drive
sources
1.3 Applications
Electrical Power Assisted Steering
(EPAS)
Variable Valve Timing for engines
1.4 Quick reference data
Table 1.
V
DS
R
DSon
Quick reference
Conditions
Min
-
-
Typ
-
8
Max
75
9
Unit
V
mΩ
drain-source voltage T
j
≥
25 °C; T
j
≤
175 °C
drain-source
on-state resistance
temperature sense
diode temperature
coefficient
temperature sense
diode forward
voltage
V
GS
= 10 V; I
D
= 50 A;
T
j
= 25 °C; see
Figure 7;
see
Figure 8
I
F
= 250 µA; T
j
≥
-55 °C;
T
j
≤
175 °C
I
F
= 250 µA; T
j
= 25 °C
Symbol Parameter
Static characteristics
S
F(TSD)
-1.4
-1.54
-1.68
mV/K
V
F(TSD)
648
658
668
mV
NXP Semiconductors
BUK7909-75ATE
N-channel TrenchPLUS standard level FET
2. Pinning information
Table 2.
Pin
1
2
3
4
5
mb
Pinning information
Symbol
G
A
D
K
S
D
Description
gate
anode
drain
cathode
source
mounting base; connected to
drain
S
K
mbl317
Simplified outline
mb
Graphic symbol
D
A
G
12 3 4 5
SOT263B
(TO-220)
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
BUK7909-75ATE TO-220
plastic single-ended package; heatsink mounted; 1 mounting hole; 5-lead SOT263B
TO-220
BUK7909-75ATE_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 16 February 2009
2 of 15
NXP Semiconductors
BUK7909-75ATE
N-channel TrenchPLUS standard level FET
4. Limiting values
Table 4.
Symbol
V
DS
V
DGS
V
GS
I
D
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
T
mb
= 25 °C; V
GS
= 10 V; see
Figure 2;
see
Figure 3;
T
mb
= 100 °C; V
GS
= 10 V; see
Figure 2;
I
DM
P
tot
I
GS(CL)
peak drain current
total power dissipation
gate-source clamping
current
T
mb
= 25 °C; t
p
≤
10 µs; pulsed; see
Figure 3
T
mb
= 25 °C; see
Figure 1
continuous
pulsed; t
p
= 5 ms;
δ
= 0.01
[1]
[2]
[2]
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
Min
-
-
-20
-
-
-
-
-
-
-
-100
Max
75
75
20
120
75
75
480
272
10
50
100
Unit
V
V
V
A
A
A
A
W
mA
mA
V
In accordance with the Absolute Maximum Rating System (IEC 60134).
V
isol(FET-TSD)
FET to temperature
sense diode isolation
voltage
T
stg
T
j
I
S
I
SM
E
DS(AL)S
storage temperature
junction temperature
source current
peak source current
T
mb
= 25 °C;
t
p
≤
10 µs; pulsed; T
mb
= 25 °C
[1]
[2]
Avalanche ruggedness
non-repetitive
I
D
= 75 A; V
sup
≤
75 V; R
GS
= 50
Ω;
V
GS
= 10 V;
drain-source avalanche T
j(init)
= 25 °C; unclamped
energy
electrostatic discharge
voltage
[1]
[2]
-55
-55
-
-
-
-
175
175
120
75
480
739
°C
°C
A
A
A
mJ
Source-drain diode
Electrostatic discharge
V
esd
HBM; C = 100 pF; R = 1.5 kΩ
-
6
kV
Current is limited by power dissipation chip rating.
Continuous current is limited by package.
BUK7909-75ATE_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 16 February 2009
3 of 15
NXP Semiconductors
BUK7909-75ATE
N-channel TrenchPLUS standard level FET
120
P
der
(%)
80
03na19
120
03ni95
ID
(A)
80
Capped at 75 A due to package
40
40
0
0
50
100
150
T
mb
(°C)
200
0
0
50
100
150
200
Tmb (°C)
Fig 2.
Fig 1.
Normalized total power dissipation as a
function of mounting base temperature
Continuous drain current as a function of
mounting base temperature
103
ID
(A)
03ni96
Limit RDSon = VDS/ID
tp = 10
μs
102
100
μs
Capped at 75 A due to package
DC
10
1 ms
10 ms
100 ms
1
1
10
102
VDS (V)
103
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK7909-75ATE_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 16 February 2009
4 of 15
NXP Semiconductors
BUK7909-75ATE
N-channel TrenchPLUS standard level FET
5. Thermal characteristics
Table 5.
Symbol
R
th(j-a)
R
th(j-mb)
Thermal characteristics
Parameter
Conditions
Min
-
-
Typ
60
-
Max
-
0.55
Unit
K/W
K/W
thermal resistance from vertical in still air
junction to ambient
thermal resistance from see
Figure 4
junction to mounting
base
1
Z
th(j-mb)
(K/W)
03ni64
δ
= 0.5
10-1
0.2
0.1
0.05
0.02
10-2
P
δ
=
tp
T
single shot
tp
T
t
10-3
10-6
10-5
10-4
10-3
10-2
10-1
1
tp (s)
10
Fig 4.
Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK7909-75ATE_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 16 February 2009
5 of 15
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