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BUK7C10-75AITE,118

Description
N-channel TrenchPLUS standard level FET
CategoryDiscrete semiconductor    The transistor   
File Size220KB,15 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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BUK7C10-75AITE,118 Overview

N-channel TrenchPLUS standard level FET

BUK7C10-75AITE,118 Parametric

Parameter NameAttribute value
Brand NameNXP Semiconduc
Is it Rohs certified?conform to
Parts packaging codeD2PAK
package instructionPLASTIC, D2PAK-7
Contacts7
Manufacturer packaging codeSOT427
Reach Compliance Code_compli
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)739 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE, CURRENT AND KELVIN SENSOR
Minimum drain-source breakdown voltage75 V
Maximum drain current (Abs) (ID)114 A
Maximum drain current (ID)75 A
Maximum drain-source on-resistance0.01 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSSO-G6
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals6
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)272 W
Maximum pulsed drain current (IDM)456 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
BUK7C10-75AITE
N-channel TrenchPLUS standard level FET
Rev. 03 — 17 February 2009
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. The devices include TrenchPLUS current sensing
and diodes for ElectroStatic Discharge (ESD) protection and temperature sensing. This
product has been designed and qualified to the appropriate AEC standard for use in
automotive critical applications.
1.2 Features and benefits
Allows responsive temperature
monitoring due to integrated
temperature sensor
Electrostatically robust due to
integrated protection diodes
Low conduction losses due to low
on-state resistance
Q101 compliant
Reduced component count due to
integrated current sensor
1.3 Applications
Automotive and general purpose
power switching
Fan control
Electrical Power Assisted Steering
(EPAS)
Variable Valve Timing for engines
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
Quick reference
Parameter
drain-source voltage
drain current
Conditions
T
j
25 °C; T
j
175 °C
V
GS
= 10 V; T
mb
= 25 °C; see
Figure 2; [1]
see
Figure 3
V
GS
= 10 V; I
D
= 50 A; T
j
= 25 °C; see
Figure 7;
see
Figure 8
T
j
> -55 °C; T
j
< 175 °C; V
GS
> 10 V
I
F
= 250 µA; T
j
> -55 °C; T
j
< 175 °C
I
F
= 250 µA; T
j
= 25 °C
Min
-
-
Typ
-
-
Max
75
114
Unit
V
A
Static characteristics
R
DSon
I
D
/I
sense
S
F(TSD)
V
F(TSD)
drain-source on-state
resistance
ratio of drain current to
sense current
temperature sense diode
temperature coefficient
temperature sense diode
forward voltage
[1]
-
450
-1.4
648
8.8
500
-1.54
658
10
550
-1.68
668
mΩ
mV/K
mV
Current is limited by power dissipation chip rating.

BUK7C10-75AITE,118 Related Products

BUK7C10-75AITE,118 BUK7C10-75AITE
Description N-channel TrenchPLUS standard level FET N-channel TrenchPLUS standard level FET
Is it Rohs certified? conform to conform to
package instruction PLASTIC, D2PAK-7 PLASTIC, D2PAK-7
Contacts 7 7
Reach Compliance Code _compli _compli
ECCN code EAR99 EAR99
Avalanche Energy Efficiency Rating (Eas) 739 mJ 739 mJ
Shell connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE, CURRENT AND KELVIN SENSOR SINGLE WITH BUILT-IN DIODE, CURRENT AND KELVIN SENSOR
Minimum drain-source breakdown voltage 75 V 75 V
Maximum drain current (Abs) (ID) 114 A 75 A
Maximum drain current (ID) 75 A 75 A
Maximum drain-source on-resistance 0.01 Ω 0.01 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSSO-G6 R-PSSO-G6
JESD-609 code e3 e3
Humidity sensitivity level 1 1
Number of components 1 1
Number of terminals 6 6
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 175 °C 175 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 272 W 272 W
Maximum pulsed drain current (IDM) 456 A 456 A
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal surface Tin (Sn) Tin (Sn)
Terminal form GULL WING GULL WING
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Base Number Matches 1 1
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