BUK7230-55A
N-channel TrenchMOS standard level FET
Rev. 02 — 16 March 2010
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
Low conduction losses due to low
on-state resistance
Q101 compliant
Suitable for standard level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V and 24 V loads
Automotive and general purpose
power switching
Motors, lamps and solenoids
1.4 Quick reference data
Table 1.
V
DS
I
D
P
tot
Quick reference
Conditions
V
GS
= 5 V; T
mb
= 25 °C;
see
Figure 1
and
3
T
mb
= 25 °C; see
Figure 2
Min
-
-
-
Typ
-
-
-
Max
55
38
88
Unit
V
A
W
drain-source voltage T
j
≥
25 °C; T
j
≤
175 °C
drain current
total power
dissipation
Symbol Parameter
Avalanche ruggedness
E
DS(AL)S
non-repetitive
drain-source
avalanche energy
Dynamic characteristics
Q
GD
gate-drain charge
V
GS
= 10 V; I
D
= 25 A;
V
DS
= 44 V; see
Figure 14
V
GS
= 10 V; I
D
= 25 A;
T
j
= 25 °C; see
Figure 11
and
12
-
9
-
nC
I
D
= 34 A; V
sup
≤
55 V;
R
GS
= 50
Ω;
V
GS
= 10 V;
T
j(init)
= 25 °C; unclamped
-
-
58
mJ
Static characteristics
R
DSon
drain-source
on-state resistance
-
26
30
mΩ
NXP Semiconductors
BUK7230-55A
N-channel TrenchMOS standard level FET
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol
G
D
S
D
Description
gate
drain
source
mounting base; connected to
drain
2
1
3
mb
D
Simplified outline
Graphic symbol
G
mbb076
S
SOT428 (DPAK)
3. Ordering information
Table 3.
Ordering information
Package
Name
BUK7230-55A
DPAK
Description
plastic single-ended surface-mounted package (DPAK); 3 leads (one
lead cropped)
Version
SOT428
Type number
4. Limiting values
Table 4.
Symbol
V
DS
V
DGR
V
GS
I
D
I
DM
P
tot
T
stg
T
j
I
S
I
SM
E
DS(AL)S
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
T
mb
= 25 °C
t
p
≤
10 µs; pulsed; T
mb
= 25 °C
T
mb
= 25 °C; V
GS
= 5 V; see
Figure 1
and
3
T
mb
= 100 °C; V
GS
= 5 V; see
Figure 1
T
mb
= 25 °C; t
p
≤
10 µs; pulsed; see
Figure 3
T
mb
= 25 °C; see
Figure 2
[1]
In accordance with the Absolute Maximum Rating System (IEC 60134).
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
R
GS
= 20 kΩ
Min
-
-
-20
-
-
-
-
-55
-55
-
-
-
Max
55
55
20
38
27
150
88
175
175
38
150
58
Unit
V
V
V
A
A
A
W
°C
°C
A
A
mJ
Source-drain diode
Avalanche ruggedness
non-repetitive
I
D
= 34 A; V
sup
≤
55 V; R
GS
= 50
Ω;
V
GS
= 10 V;
drain-source avalanche T
j(init)
= 25 °C; unclamped
energy
[1]
Peak drain current is limited by chip, not package.
BUK7230-55A_2
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 16 March 2010
2 of 13
NXP Semiconductors
BUK7230-55A
N-channel TrenchMOS standard level FET
120
I
der
(%)
80
03aa24
120
P
der
(%)
80
03aa16
40
40
0
0
50
100
150
T
mb
(°C)
200
0
0
50
100
150
T
mb
(°C)
200
Fig 1.
Normalized continuous drain current as a
function of mounting base temperature
10
3
I
D
(A)
10
2
R
DSon
= V
DS
/ I
D
Fig 2.
Normalized total power dissipation as a
function of mounting base temperature
03na49
tp = 10
μs
10
P
δ
=
t
p
T
100
μs
D.C.
1 ms
10 ms
100 ms
10
V
DS
(V)
10
2
t
p
T
t
1
1
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK7230-55A_2
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 16 March 2010
3 of 13
NXP Semiconductors
BUK7230-55A
N-channel TrenchMOS standard level FET
5. Thermal characteristics
Table 5.
Symbol
R
th(j-mb)
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from junction to mounting base
thermal resistance from junction to ambient
see
Figure 4
Conditions
Min
-
-
Typ
-
71.4
Max
1.7
-
Unit
K/W
K/W
10
Z
th(j-mb)
(K/W)
1
03na50
0.5
0.2
0.1
t
p
T
10
−1
0.05
0.02
Single Shot
P
δ
=
t
p
T
t
10
−2
10
−6
10
−5
10
−4
10
−3
10
−2
10
−1
1
10
t
p
(s)
10
2
Fig 4.
Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK7230-55A_2
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 16 March 2010
4 of 13
NXP Semiconductors
BUK7230-55A
N-channel TrenchMOS standard level FET
6. Characteristics
Table 6.
Symbol
V
(BR)DSS
V
GS(th)
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
Conditions
I
D
= 0.25 mA; V
GS
= 0 V; T
j
= 25 °C
I
D
= 0.25 mA; V
GS
= 0 V; T
j
= -55 °C
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 25 °C; see
Figure 10
I
D
= 1 mA; V
DS
= V
GS
; T
j
= -55 °C; see
Figure 10
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 175 °C; see
Figure 10
I
DSS
I
GSS
R
DSon
drain leakage current
gate leakage current
drain-source on-state
resistance
V
DS
= 55 V; V
GS
= 0 V; T
j
= 175 °C
V
DS
= 55 V; V
GS
= 0 V; T
j
= 25 °C
V
DS
= 0 V; V
GS
= 10 V; T
j
= 25 °C
V
DS
= 0 V; V
GS
= -10 V; T
j
= 25 °C
V
GS
= 10 V; I
D
= 25 A; T
j
= 175 °C; see
Figure 11
and
12
V
GS
= 10 V; I
D
= 25 A; T
j
= 25 °C; see
Figure 11
and
12
Dynamic characteristics
Q
G(tot)
Q
GS
Q
GD
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain
inductance
internal source
inductance
source-drain voltage
reverse recovery time
recovered charge
measured from drain lead from package to
centre of die; T
j
= 25 °C
measured from drain lead from package to
source bond pad
I
S
= 25 A; V
GS
= 0 V; T
j
= 25 °C; see
Figure 13
I
S
= 25 A; dI
S
/dt = -100 A/µs; V
GS
= -10 V;
V
DS
= 30 V; T
j
= 25 °C
V
DS
= 30 V; R
L
= 1.2
Ω;
V
GS
= 5 V;
R
G(ext)
= 10
Ω;
T
j
= 25 °C
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz; T
j
= 25 °C;
see
Figure 15
I
D
= 25 A; V
DS
= 44 V; V
GS
= 10 V; see
Figure 14
-
-
-
-
-
-
-
-
-
-
-
-
24
5
9
864
218
139
14
68
83
43
2.5
7.5
-
-
-
1152
262
191
-
-
-
-
-
-
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
nH
nH
Min
55
50
2
-
1
-
-
-
-
-
-
Typ
-
-
3
-
-
-
0.05
2
2
-
26
Max
-
-
4
4.4
-
500
10
100
100
60
30
Unit
V
V
V
V
V
µA
µA
nA
nA
mΩ
mΩ
Static characteristics
Source-drain diode
V
SD
t
rr
Q
r
-
-
-
0.85
40
100
1.2
-
-
V
ns
nC
BUK7230-55A_2
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 16 March 2010
5 of 13
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