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BUK7E04-40A,127

Description
N-channel TrenchMOS standard level FET
CategoryDiscrete semiconductor    The transistor   
File Size203KB,14 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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BUK7E04-40A,127 Overview

N-channel TrenchMOS standard level FET

BUK7E04-40A,127 Parametric

Parameter NameAttribute value
Source Url Status Check Date2013-06-14 00:00:00
Brand NameNXP Semiconduc
Is it Rohs certified?conform to
MakerNXP
Parts packaging codeTO-262
Contacts3
Manufacturer packaging codeSOT226
Reach Compliance Code_compli
Is SamacsysN
Base Number Matches1
BUK7E04-40A
N-channel TrenchMOS standard level FET
Rev. 03 — 15 June 2010
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
Low conduction losses due to low
on-state resistance
Q101 compliant
Suitable for standard level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V loads
Automotive and general purpose
power switching
Motors, lamps and solenoids
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
R
DSon
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
drain-source on-state
resistance
Conditions
T
j
25 °C; T
j
175 °C
V
GS
= 10 V; T
mb
= 25 °C;
see
Figure 3;
see
Figure 1
T
mb
= 25 °C; see
Figure 2
V
GS
= 10 V; I
D
= 25 A;
T
j
= 175 °C; see
Figure 11;
see
Figure 12
V
GS
= 10 V; I
D
= 25 A;
T
j
= 25 °C; see
Figure 11;
see
Figure 12
[1]
Min
-
-
-
-
Typ
-
-
-
-
Max Unit
40
75
300
8.5
V
A
W
mΩ
Static characteristics
-
3.9
4.5
mΩ
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