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BUK7507-30B,127

Description
N-channel TrenchMOS standard level FET
CategoryDiscrete semiconductor    The transistor   
File Size102KB,15 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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BUK7507-30B,127 Overview

N-channel TrenchMOS standard level FET

BUK7507-30B,127 Parametric

Parameter NameAttribute value
Brand NameNXP Semiconduc
Is it Rohs certified?conform to
MakerNXP
Parts packaging codeTO-220
package instructionPLASTIC, SC-46, 3 PIN
Contacts3
Manufacturer packaging codeSOT78A
Reach Compliance Codecompli
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)329 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (Abs) (ID)75 A
Maximum drain current (ID)75 A
Maximum drain-source on-resistance0.007 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)157 W
Maximum pulsed drain current (IDM)435 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
BUK75/7607-30B
TrenchMOS™ standard level FET
Rev. 01 — 07 April 2003
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect power transistor in a plastic package using
Philips High-Performance Automotive (HPA) TrenchMOS™ technology.
Product availability:
BUK7507-30B in SOT78 (TO-220AB)
BUK7607-30B in SOT404 (D
2
-PAK).
1.2 Features
s
Very low on-state resistance
s
175
°C
rated
s
Q101 compliant
s
Standard level compatible.
1.3 Applications
s
Automotive systems
s
Motors, lamps and solenoids
s
12 V loads
s
General purpose power switching.
1.4 Quick reference data
s
E
DS(AL)S
329 mJ
s
I
D
75 A
s
R
DSon
= 5.9 mΩ (typ)
s
P
tot
157 W.
2. Pinning information
Table 1:
Pin
1
2
3
mb
Pinning - SOT78 and SOT404 simplified outlines and symbol
Description
gate (g)
drain (d)
source (s)
mounting base,
connected to
drain (d)
1
MBK106
Simplified outline
mb
mb
Symbol
[1]
d
g
2
3
MBK116
MBB076
s
1 2 3
SOT78 (TO-220AB)
[1]
SOT404 (D
2
-PAK)
It is not possible to make connection to pin 2 of the SOT404 package.

BUK7507-30B,127 Related Products

BUK7507-30B,127 BUK7507-30B BUK7607-30B
Description N-channel TrenchMOS standard level FET TrenchMOS standard level FET TrenchMOS standard level FET
Is it Rohs certified? conform to conform to conform to
package instruction PLASTIC, SC-46, 3 PIN PLASTIC, SC-46, 3 PIN PLASTIC, D2PAK-3
Contacts 3 3 3
Reach Compliance Code compli unknow _compli
ECCN code EAR99 EAR99 EAR99
Avalanche Energy Efficiency Rating (Eas) 329 mJ 329 mJ 329 mJ
Shell connection DRAIN DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 30 V 30 V 30 V
Maximum drain current (Abs) (ID) 75 A 75 A 75 A
Maximum drain current (ID) 75 A 75 A 75 A
Maximum drain-source on-resistance 0.007 Ω 0.007 Ω 0.007 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSFM-T3 R-PSFM-T3 R-PSSO-G2
JESD-609 code e3 e3 e3
Number of components 1 1 1
Number of terminals 3 3 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 175 °C 175 °C 175 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 157 W 157 W 157 W
Maximum pulsed drain current (IDM) 435 A 435 A 435 A
Certification status Not Qualified Not Qualified Not Qualified
surface mount NO NO YES
Terminal surface Tin (Sn) Tin (Sn) Tin (Sn)
Terminal form THROUGH-HOLE THROUGH-HOLE GULL WING
Terminal location SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Maker NXP NXP -
Parts packaging code TO-220 TO-220AB -
JEDEC-95 code TO-220AB TO-220AB -
Is it lead-free? - Lead free Lead free

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