DP
AK
BUK72150-55A
N-channel TrenchMOS standard level FET
Rev. 03 — 26 January 2011
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
AEC Q101 compliant
Low conduction losses due to low
on-state resistance
Suitable for standard level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V and 24 V loads
Automotive systems
General purpose power switching
Motors, lamps and solenoids
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
Quick reference data
Parameter
drain-source
voltage
drain current
total power
dissipation
drain-source
on-state
resistance
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
V
GS
= 10 V; T
mb
= 25 °C;
see
Figure 3;
see
Figure 1
T
mb
= 25 °C; see
Figure 2
Min
-
-
-
Typ
-
-
-
Max Unit
55
11
36
V
A
W
Static characteristics
R
DSon
V
GS
= 10 V; I
D
= 5 A;
T
j
= 25 °C; see
Figure 10;
see
Figure 11
-
127
150
mΩ
NXP Semiconductors
BUK72150-55A
N-channel TrenchMOS standard level FET
Quick reference data
…continued
Parameter
Conditions
Min
-
Typ
-
Max Unit
16
mJ
Table 1.
Symbol
E
DS(AL)S
Avalanche ruggedness
non-repetitive
I
D
= 11 A; V
sup
≤
55 V;
drain-source
R
GS
= 50
Ω;
V
GS
= 10 V;
avalanche energy T
j(init)
= 25 °C; unclamped
gate-drain charge V
GS
= 10 V; I
D
= 3 A;
V
DS
= 44 V; T
j
= 25 °C;
see
Figure 12
Dynamic characteristics
Q
GD
-
2.7
-
nC
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
G
D
S
D
gate
drain
[1]
source
mounting base; connected to
drain
2
1
3
mb
D
Simplified outline
Graphic symbol
G
mbb076
S
SOT428 (DPAK)
[1]
It is not possible to make a connection to pin 2.
3. Ordering information
Table 3.
Ordering information
Package
Name
BUK72150-55A
DPAK
Description
plastic single-ended surface-mounted package (DPAK); 3 leads
(one lead cropped)
Version
SOT428
Type number
BUK72150-55A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 03 — 26 January 2011
2 of 13
NXP Semiconductors
BUK72150-55A
N-channel TrenchMOS standard level FET
4. Limiting values
Table 4.
Symbol
V
DS
V
DGR
V
GS
I
D
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
T
mb
= 25 °C; V
GS
= 10 V; see
Figure 3;
see
Figure 1
T
mb
= 100 °C; V
GS
= 10 V; see
Figure 1
I
DM
P
tot
T
stg
T
j
I
S
I
SM
E
DS(AL)S
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
non-repetitive drain-source
avalanche energy
T
mb
= 25 °C
pulsed; t
p
≤
10 µs; T
mb
= 25 °C
I
D
= 11 A; V
sup
≤
55 V; R
GS
= 50
Ω;
V
GS
= 10 V; T
j(init)
= 25 °C; unclamped
T
mb
= 25 °C; pulsed; t
p
≤
10 µs;
see
Figure 3
T
mb
= 25 °C; see
Figure 2
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
R
GS
= 20 kΩ
Min
-
-
-20
-
-
-
-
-55
-55
-
-
-
Max
55
55
20
11
7
44
36
175
175
11
44
16
Unit
V
V
V
A
A
A
W
°C
°C
A
A
mJ
In accordance with the Absolute Maximum Rating System (IEC 60134).
Source-drain diode
Avalanche ruggedness
12
I
D
(A)
8
03np26
120
P
der
(%)
80
03na19
4
40
0
0
50
100
150
200
T
mb
(°C)
0
0
50
100
150
T
mb
(°C)
200
Fig 1.
Normalized continuous drain current as a
function of mounting base temperature
Fig 2.
Normalized total power dissipation as a
function of mounting base temperature
BUK72150-55A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 03 — 26 January 2011
3 of 13
NXP Semiconductors
BUK72150-55A
N-channel TrenchMOS standard level FET
10
2
I
D
(A)
10
03np24
Limit R
DSon
= V
DS
/ I
D
t
p
= 10
μ
s
100
μ
s
1 ms
DC
10 ms
1
100 ms
10
−1
1
10
V
DS
(V)
10
2
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
5. Thermal characteristics
Table 5.
Symbol
R
th(j-mb)
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
thermal resistance
from junction to
ambient
Conditions
see
Figure 4
Min
-
Typ
-
Max
4.1
Unit
K/W
R
th(j-a)
-
71
-
K/W
10
Z
th(j-mb)
(K/W)
1
03np25
δ
= 0.5
0.2
0.1
0.05
0.02
10
−1
single shot
P
δ
=
tp
T
tp
10
−2
10
−6
t
T
1
t
p
(s)
10
−5
10
−4
10
−3
10
−2
10
−1
Fig 4.
Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK72150-55A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 03 — 26 January 2011
4 of 13
NXP Semiconductors
BUK72150-55A
N-channel TrenchMOS standard level FET
6. Characteristics
Table 6.
Symbol
V
(BR)DSS
V
GS(th)
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
Conditions
I
D
= 0.25 A; V
GS
= 0 V; T
j
= -55 °C
I
D
= 0.25 A; V
GS
= 0 V; T
j
= 25 °C
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 25 °C;
see
Figure 9
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 175 °C;
see
Figure 9
I
D
= 1 mA; V
DS
= V
GS
; T
j
= -55 °C;
see
Figure 9
I
DSS
I
GSS
R
DSon
drain leakage current
gate leakage current
drain-source on-state
resistance
V
DS
= 55 V; V
GS
= 0 V; T
j
= 175 °C
V
DS
= 55 V; V
GS
= 0 V; T
j
= 25 °C
V
GS
= 20 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= -20 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= 10 V; I
D
= 5 A; T
j
= 175 °C;
see
Figure 10;
see
Figure 11
V
GS
= 10 V; I
D
= 5 A; T
j
= 25 °C;
see
Figure 10;
see
Figure 11
Dynamic characteristics
Q
G(tot)
Q
GS
Q
GD
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain
inductance
internal source
inductance
source-drain voltage
reverse recovery time
recovered charge
V
DS
25 V; R
L
= 2.7
Ω;
V
GS
= 10 V;
R
G(ext)
= 5.6
Ω;
T
j
= 25 °C
measured from drain to center of die ;
T
j
= 25 °C
measured from source lead to source
bond pad ; T
j
= 25 °C
I
S
= 10 A; V
GS
= 0 V; T
j
= 25 °C;
see
Figure 14
I
S
= 10 A; dI
S
/dt = -100 A/µs;
V
GS
= -10 V; V
DS
= 30 V; T
j
= 25 °C
V
DS
= 25 V; R
L
= 2.7
Ω;
V
GS
= 10 V;
R
G(ext)
= 5.6
Ω;
T
j
= 25 °C
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz;
T
j
= 25 °C; see
Figure 13
I
D
= 3 A; V
DS
= 44 V; V
GS
= 10 V;
T
j
= 25 °C; see
Figure 12
-
-
-
-
-
-
-
-
-
-
-
-
5.5
1
2.7
242
40
25
3
26
8
10
2.5
7.5
-
-
-
322
48
35
-
-
-
-
-
-
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
nH
nH
Min
50
55
2
1
-
-
-
-
-
-
-
Typ
-
-
3
-
-
-
0.05
2
2
-
127
Max
-
-
4
-
4.4
500
10
100
100
300
150
Unit
V
V
V
V
V
µA
µA
nA
nA
mΩ
mΩ
Static characteristics
Source-drain diode
V
SD
t
rr
Q
r
-
-
-
1.25
32
50
1.5
-
-
V
ns
nC
BUK72150-55A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 03 — 26 January 2011
5 of 13
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