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BUK9230-100B,118

Description
N-channel TrenchMOS logic level FET
CategoryDiscrete semiconductor    The transistor   
File Size85KB,12 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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BUK9230-100B,118 Overview

N-channel TrenchMOS logic level FET

BUK9230-100B,118 Parametric

Parameter NameAttribute value
Brand NameNXP Semiconduc
Is it Rohs certified?conform to
Parts packaging codeDPAK
package instructionPLASTIC, SC-63, DPAK-3
Contacts3
Manufacturer packaging codeSOT428
Reach Compliance Code_compli
ECCN codeEAR99
Other featuresLOGIC LEVEL COMPATIBLE.
Avalanche Energy Efficiency Rating (Eas)150 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage100 V
Maximum drain current (Abs) (ID)47 A
Maximum drain current (ID)47 A
Maximum drain-source on-resistance0.03 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-252AA
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature185 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)167 W
Maximum pulsed drain current (IDM)185 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
BUK9230-100B
TrenchMOS™ logic level FET
M3D300
Rev. 01 — 22 January 2004
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect power transistor in a plastic package using
Philips High-Performance Automotive (HPA) TrenchMOS™ technology.
1.2 Features
s
Very low on-state resistance
s
185
°C
rated
s
Q101 compliant
s
Logic level compatible.
1.3 Applications
s
Automotive systems
s
Motors, lamps and solenoids
s
12 V, 24 V, and 42 V loads
s
General purpose power switching.
1.4 Quick reference data
s
E
DS(AL)S
150 mJ
s
I
D
47 A
s
R
DSon
= 25 mΩ (typ)
s
P
tot
167 W.
2. Pinning information
Table 1:
Pin
1
2
3
mb
Pinning - SOT428 (D-PAK), simplified outline and symbol
Simplified outline
[1]
Description
gate (g)
drain (d)
source (s)
mounting base;
connected to
drain (d)
Symbol
d
mb
g
s
MBB076
2
1
Top view
3
MBK091
SOT428 (D-PAK)
[1]
It is not possible to make connection to pin 2 of the SOT428 package.

BUK9230-100B,118 Related Products

BUK9230-100B,118 BUK9230-100B
Description N-channel TrenchMOS logic level FET trenchmos? logic level fet
Is it Rohs certified? conform to conform to
Parts packaging code DPAK TO-252
package instruction PLASTIC, SC-63, DPAK-3 PLASTIC, SC-63, DPAK-3
Contacts 3 3
Reach Compliance Code _compli not_compliant
ECCN code EAR99 EAR99
Other features LOGIC LEVEL COMPATIBLE. LOGIC LEVEL COMPATIBLE.
Avalanche Energy Efficiency Rating (Eas) 150 mJ 150 mJ
Shell connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 100 V 100 V
Maximum drain current (Abs) (ID) 47 A 47 A
Maximum drain current (ID) 47 A 47 A
Maximum drain-source on-resistance 0.03 Ω 0.033 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-252AA TO-252
JESD-30 code R-PSSO-G2 R-PSSO-G2
JESD-609 code e3 e3
Humidity sensitivity level 1 1
Number of components 1 1
Number of terminals 2 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 185 °C 185 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED 260
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 167 W 167 W
Maximum pulsed drain current (IDM) 185 A 185 A
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal surface Tin (Sn) Tin (Sn)
Terminal form GULL WING GULL WING
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED 30
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Base Number Matches 1 1
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