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BUK9Y11-30B,115

Description
N-channel TrenchMOS logic level FET
CategoryDiscrete semiconductor    The transistor   
File Size89KB,12 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
Download Datasheet Parametric View All

BUK9Y11-30B,115 Overview

N-channel TrenchMOS logic level FET

BUK9Y11-30B,115 Parametric

Parameter NameAttribute value
Source Url Status Check Date2013-06-14 00:00:00
Brand NameNXP Semiconduc
Is it Rohs certified?conform to
MakerNXP
Parts packaging codeSOIC
Contacts4
Manufacturer packaging codeSOT669
Reach Compliance Code_compli
BUK9Y11-30B
N-channel TrenchMOS logic level FET
Rev. 01 — 30 August 2007
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package
using NXP High-Performance Automotive (HPA) TrenchMOS technology.
1.2 Features
I
Very low on-state resistance
I
175
°C
rated
I
Q101 compliant
I
Logic level compatible
1.3 Applications
I
Automotive systems
I
Motors, lamps and solenoids
I
General purpose power switching
I
12 V loads
1.4 Quick reference data
I
E
DS(AL)S
112 mJ
I
I
D
59 A
I
R
DSon
= 9.3 mΩ (typ)
I
P
tot
75 W
2. Pinning information
Table 1.
Pin
4
mb
Pinning
Description
gate (G)
mounting base; connected to drain (D)
G
Simplified outline
mb
Symbol
D
1, 2, 3 source (S)
1 2 3 4
mbl798
S1 S2 S3
SOT669 (LFPAK)
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