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BUK9Y19-75B,115

Description
N-channel TrenchMOS logic level FET
CategoryDiscrete semiconductor    The transistor   
File Size179KB,14 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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BUK9Y19-75B,115 Overview

N-channel TrenchMOS logic level FET

BUK9Y19-75B,115 Parametric

Parameter NameAttribute value
Brand NameNXP Semiconduc
Is it Rohs certified?conform to
MakerNXP
Parts packaging codeSOIC
Contacts4
Manufacturer packaging codeSOT669
Reach Compliance Code_compli
BUK9Y19-75B
N-channel TrenchMOS logic level FET
Rev. 04 — 13 April 2010
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
Low conduction losses due to low
on-state resistance
Q101 compliant
Suitable for logic level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V, 24 V and 42 V loads
Automotive systems
DC-to-DC converters
Engine management
General purpose power switching
Motors, lamps and solenoids
Transmission control
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
Quick reference data
Parameter
drain-source
voltage
drain current
total power
dissipation
drain-source
on-state
resistance
Conditions
T
j
25 °C; T
j
175 °C
V
GS
= 5 V; T
mb
= 25 °C;
see
Figure 1;
see
Figure 4
T
mb
= 25 °C; see
Figure 2
Min
-
-
-
Typ
-
-
-
Max Unit
75
V
48.2 A
106
W
Static characteristics
R
DSon
V
GS
= 5 V; I
D
= 20 A;
T
j
= 25 °C; see
Figure 13
V
GS
= 10 V; I
D
= 20 A;
T
j
= 25 °C
-
-
15.9 19
14.7 18
mΩ
mΩ

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