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BUK9MPP-65PLL,518

Description
Dual TrenchPLUS FET Logic Level FET
CategoryDiscrete semiconductor    The transistor   
File Size416KB,18 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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BUK9MPP-65PLL,518 Overview

Dual TrenchPLUS FET Logic Level FET

BUK9MPP-65PLL,518 Parametric

Parameter NameAttribute value
Source Url Status Check Date2013-06-14 00:00:00
Is it Rohs certified?conform to
MakerNXP
Reach Compliance Codecompli
BUK9MPP-65PLL
Dual TrenchPLUS FET Logic Level FET
Rev. 03 — 15 July 2010
Product data sheet
1. Product profile
1.1 General description
Dual N-channel enhancement mode field-effect power transistor in SO20. Device is
manufactured using NXP High-Performance (HPA) TrenchPLUS technology, featuring
very low on-state resistance, integrated current sensing transistors and over temperature
protection diodes.
1.2 Features and benefits
Integrated current sensors
Integrated temperature sensors
1.3 Applications
Lamp switching
Motor drive systems
Power distribution
Solenoid drivers
1.4 Quick reference data
Table 1.
Symbol
R
DSon
Quick reference data
Parameter
drain-source
on-state
resistance
ratio of drain
current to sense
current
drain-source
breakdown
voltage
Conditions
V
GS
= 5 V; I
D
= 5 A; T
j
= 25 °C;
see
Figure 17;
see
Figure 16
T
j
= 25 °C; V
GS
= 5 V;
see
Figure 18
I
D
= 250 µA; V
GS
= 0 V;
T
j
= 25 °C
Min
-
Typ
23
Max Unit
27
mΩ
FET1 and FET2 static characteristics
I
D
/I
sense
3587 3986 4385 A/A
V
(BR)DSS
65
-
-
V
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