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BUK655R0-75C,127

Description
N-channel TrenchMOS FET
CategoryDiscrete semiconductor    The transistor   
File Size202KB,14 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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BUK655R0-75C,127 Overview

N-channel TrenchMOS FET

BUK655R0-75C,127 Parametric

Parameter NameAttribute value
Source Url Status Check Date2013-06-14 00:00:00
Brand NameNXP Semiconduc
Is it Rohs certified?conform to
MakerNXP
Parts packaging codeTO-220
package instructionPLASTIC, SC-46, 3 PIN
Contacts3
Manufacturer packaging codeSOT78A
Reach Compliance Codeunknow
BUK655R0-75C
N-channel TrenchMOS FET
Rev. 02 — 14 October 2010
Product data sheet
1. Product profile
1.1 General description
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET)
in a plastic package using advanced TrenchMOS technology. This product has been
designed and qualified to the appropriate AEC Q101 standard for use in high performance
automotive applications.
1.2 Features and benefits
AEC Q101 compliant
Suitable for intermediate level gate
drive sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V, 24 V and 42 V Automotive
systems
Electric and electro-hydraulic power
steering
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power
switching
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
Quick reference data
Parameter
drain-source voltage
drain current
total power
dissipation
Conditions
T
j
25 °C; T
j
175 °C
V
GS
= 10 V; T
mb
= 25 °C;
see
Figure 1
T
mb
= 25 °C; see
Figure 2
[1]
Min
-
-
-
Typ
-
-
-
Max Unit
75
120
263
V
A
W
Static characteristics
R
DSon
drain-source on-state V
GS
= 10 V; I
D
= 25 A;
resistance
T
j
= 25 °C; see
Figure 11
-
4.6
5.3
mΩ
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