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BZB84-C11/DG,215

Description
13 V, 0.3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, TO-236AB
Categorysemiconductor    Discrete semiconductor   
File Size83KB,14 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet Parametric View All

BZB84-C11/DG,215 Overview

13 V, 0.3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, TO-236AB

BZB84-C11/DG,215 Parametric

Parameter NameAttribute value
Number of terminals3
Number of components2
Rated working voltage13 V
Processing package descriptionPLASTIC PACKAGE-3
stateACTIVE
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
Terminal locationDUAL
Packaging MaterialsPLASTIC/EPOXY
CraftsmanshipZENER
structureCOMMON ANODE, 2 ELEMENTS
Diode component materialsSILICON
Maximum power consumption limit0.3000 W
polarityUNIDIRECTIONAL
Diode typeVOLTAGE REGULATOR DIODE
Working test current5 mA
Maximum total reference voltage2 %
BZB84 series
Dual Zener diodes
Rev. 03 — 9 June 2009
Product data sheet
1. Product profile
1.1 General description
General-purpose Zener diodes in a SOT23 (TO-236AB) small Surface-Mounted
Device (SMD) plastic package.
1.2 Features
I
Non-repetitive peak reverse power
dissipation:
40 W
I
Total power dissipation:
300 mW
I
Two tolerance series:
B =
±2
% and C =
±5
%
I
Wide working voltage range:
nominal 2.4 V to 75 V (E24 range)
I
Small plastic package suitable for
surface-mounted design
I
Dual common anode configuration
I
AEC-Q101 qualified
1.3 Applications
I
General regulation functions
1.4 Quick reference data
Table 1.
Symbol
Per diode
V
F
P
ZSM
[1]
[2]
Quick reference data
Parameter
forward voltage
non-repetitive peak reverse
power dissipation
Conditions
I
F
= 10 mA
[1]
[2]
Min
-
-
Typ
-
-
Max
0.9
40
Unit
V
W
Pulse test: t
p
300
µs; δ ≤
0.02.
t
p
= 100
µs;
square wave; T
j
= 25
°C
prior to surge
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