BZB84 series
Dual Zener diodes
Rev. 03 — 9 June 2009
Product data sheet
1. Product profile
1.1 General description
General-purpose Zener diodes in a SOT23 (TO-236AB) small Surface-Mounted
Device (SMD) plastic package.
1.2 Features
I
Non-repetitive peak reverse power
dissipation:
≤
40 W
I
Total power dissipation:
≤
300 mW
I
Two tolerance series:
B =
±2
% and C =
±5
%
I
Wide working voltage range:
nominal 2.4 V to 75 V (E24 range)
I
Small plastic package suitable for
surface-mounted design
I
Dual common anode configuration
I
AEC-Q101 qualified
1.3 Applications
I
General regulation functions
1.4 Quick reference data
Table 1.
Symbol
Per diode
V
F
P
ZSM
[1]
[2]
Quick reference data
Parameter
forward voltage
non-repetitive peak reverse
power dissipation
Conditions
I
F
= 10 mA
[1]
[2]
Min
-
-
Typ
-
-
Max
0.9
40
Unit
V
W
Pulse test: t
p
≤
300
µs; δ ≤
0.02.
t
p
= 100
µs;
square wave; T
j
= 25
°C
prior to surge
NXP Semiconductors
BZB84 series
Dual Zener diodes
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
cathode (diode 1)
cathode (diode 2)
common anode
1
2
3
3
Simplified outline
Graphic symbol
1
2
006aaa154
3. Ordering information
Table 3.
Ordering information
Package
Name
BZB84-B2V4 to
BZB84-C75
[1]
[1]
Type number
Description
plastic surface-mounted package; 3 leads
Version
SOT23
-
The series consists of 74 types with nominal working voltages from 2.4 V to 75 V.
4. Marking
Table 4.
Marking codes
Marking code
[1]
V9*
VA*
VB*
VC*
VD*
VE*
VF*
VG*
VH*
VK*
VL*
VM*
VN*
VP*
VR*
Type number
BZB84-C2V4
BZB84-C2V7
BZB84-C3V0
BZB84-C3V3
BZB84-C3V6
BZB84-C3V9
BZB84-C4V3
BZB84-C4V7
BZB84-C5V1
BZB84-C5V6
BZB84-C6V2
BZB84-C6V8
BZB84-C7V5
BZB84-C8V2
BZB84-C9V1
Marking code
[1]
U9*
UA*
UB*
UC*
UD*
UE*
UF*
UG*
UH*
UK*
UL*
UM*
UN*
UP*
UR*
Type number
BZB84-B2V4
BZB84-B2V7
BZB84-B3V0
BZB84-B3V3
BZB84-B3V6
BZB84-B3V9
BZB84-B4V3
BZB84-B4V7
BZB84-B5V1
BZB84-B5V6
BZB84-B6V2
BZB84-B6V8
BZB84-B7V5
BZB84-B8V2
BZB84-B9V1
BZB84_SER_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 9 June 2009
2 of 14
NXP Semiconductors
BZB84 series
Dual Zener diodes
Marking codes
…continued
Marking code
[1]
VS*
VT*
VU*
VV*
VW*
PT*
PU*
RP*
PV*
PW*
PX*
PY*
PZ*
RA*
RB*
RC*
RD*
RE*
RF*
RG*
RH*
RJ*
Type number
BZB84-C10
BZB84-C11
BZB84-C12
BZB84-C13
BZB84-C15
BZB84-C16
BZB84-C18
BZB84-C20
BZB84-C22
BZB84-C24
BZB84-C27
BZB84-C30
BZB84-C33
BZB84-C36
BZB84-C39
BZB84-C43
BZB84-C47
BZB84-C51
BZB84-C56
BZB84-C62
BZB84-C68
BZB84-C75
Marking code
[1]
US*
UT*
UU*
UV*
UW*
PB*
PC*
RQ*
PD*
PE*
PF*
PG*
PH*
PJ*
PK*
PL*
PM*
PN*
PP*
PQ*
PR*
PS*
Table 4.
Type number
BZB84-B10
BZB84-B11
BZB84-B12
BZB84-B13
BZB84-B15
BZB84-B16
BZB84-B18
BZB84-B20
BZB84-B22
BZB84-B24
BZB84-B27
BZB84-B30
BZB84-B33
BZB84-B36
BZB84-B39
BZB84-B43
BZB84-B47
BZB84-B51
BZB84-B56
BZB84-B62
BZB84-B68
BZB84-B75
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per diode
I
F
I
ZSM
forward current
non-repetitive peak
reverse current
non-repetitive peak
reverse power dissipation
[1]
Parameter
Conditions
Min
-
-
Max
200
see
Table 8, 9,
10
and
11
40
Unit
mA
P
ZSM
[1]
-
W
BZB84_SER_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 9 June 2009
3 of 14
NXP Semiconductors
BZB84 series
Dual Zener diodes
Table 5.
Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per device
P
tot
T
j
T
amb
T
stg
[1]
[2]
Parameter
total power dissipation
junction temperature
ambient temperature
storage temperature
Conditions
T
amb
≤
25
°C
[2]
Min
-
-
−55
−65
Max
300
150
+150
+150
Unit
mW
°C
°C
°C
t
p
= 100
µs;
square wave; T
j
= 25
°C
prior to surge
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
6. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
R
th(j-sp)
[1]
[2]
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
Conditions
in free air
[1]
Min
-
-
Typ
-
-
Max
417
100
Unit
K/W
K/W
Per device; single diode loaded
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Soldering points at pins 1 and 2.
7. Characteristics
Table 7.
Characteristics
T
j
= 25
°
C unless otherwise specified.
Symbol
Per diode
V
F
[1]
Parameter
forward voltage
Conditions
I
F
= 10 mA
[1]
Min
-
Typ
-
Max
0.9
Unit
V
Pulse test: t
p
≤
300
µs; δ ≤
0.02.
BZB84_SER_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 9 June 2009
4 of 14
NXP Semiconductors
BZB84 series
Dual Zener diodes
Table 8.
Characteristics per type; BZB84-B2V4 to BZB84-B24
T
j
= 25
°
C unless otherwise specified.
BZB84-
Bxxx
Working voltage
V
Z
(V)
Differential
resistance
r
dif
(Ω)
I
Z
= 5 mA
Min
2V4
2V7
3V0
3V3
3V6
3V9
4V3
4V7
5V1
5V6
6V2
6V8
7V5
8V2
9V1
10
11
12
13
15
16
18
20
22
24
[1]
[2]
Reverse current Temperature
coefficient
I (µA)
R
S
Z
(mV/K)
I
Z
= 5 mA
Max
50
20
10
5
5
3
3
3
2
1
3
2
1
0.70
0.50
0.20
0.10
0.10
0.10
0.05
0.05
0.05
0.05
0.05
0.05
V
R
(V)
1
1
1
1
1
1
1
2
2
2
4
4
5
5
6
7
8
8
8
10.5
11.2
12.6
14.0
15.4
16.8
Min
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−2.7
−2.0
0.4
1.2
2.5
3.2
3.8
4.5
5.4
6.0
7.0
9.2
10.4
12.4
14.4
16.4
18.4
Max
0
0
0
0
0
0
0
0.2
1.2
2.5
3.7
4.5
5.3
6.2
7.0
8.0
9.0
10.0
11.0
13.0
14.0
16.0
18.0
20.0
22.0
Diode
Non-repetitive
capacitance peak reverse
current
C (pF)
[1]
d
I
ZSM
(A)
[2]
I
Z
= 1 mA I
Z
= 5 mA
Max
2.45
2.75
3.06
3.37
3.67
3.98
4.39
4.79
5.20
5.71
6.32
6.94
7.65
8.36
9.28
10.20
11.20
12.20
13.30
15.30
16.30
18.40
20.4
22.4
24.5
Max
600
600
600
600
600
600
600
500
480
400
150
80
80
80
100
150
150
150
170
200
200
225
225
250
250
Max
100
100
95
95
90
90
90
80
60
40
10
15
15
15
15
20
20
25
30
30
40
45
55
55
70
Max
450
450
450
450
450
450
450
300
300
300
200
200
150
150
150
90
85
85
80
75
75
70
60
60
55
Max
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
4.0
4.0
3.0
3.0
2.5
2.5
2.5
2.0
1.5
1.5
1.5
1.25
1.25
2.35
2.65
2.94
3.23
3.53
3.82
4.21
4.61
5.00
5.49
6.08
6.66
7.35
8.04
8.92
9.80
10.80
11.80
12.70
14.70
15.70
17.60
19.6
21.6
23.5
f = 1 MHz; V
R
= 0 V
t
p
= 100
µs;
square wave; T
j
= 25
°C
prior to surge
BZB84_SER_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 9 June 2009
5 of 14
京公网安备 11010802033920号
EEWORLD
