BC859C,235 datasheet, PDF - EEWORLD Datasheet

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BC859C,235: Description100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB; CategoryDiscrete semiconductor The transistor; File Size131KB，8 Pages; ManufacturerNXP; Websitehttps://www.nxp.com; Environmental Compliance

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BC859C,235 Overview

100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB

BC859C,235 Parametric

Parameter Name	Attribute value
Brand Name	NXP Semiconduc
Is it Rohs certified?	conform to
Maker	NXP
Parts packaging code	TO-236
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Manufacturer packaging code	SOT23
Reach Compliance Code	compli
ECCN code	EAR99
Other features	LOW NOISE
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	30 V
Configuration	SINGLE
Minimum DC current gain (hFE)	420
JEDEC-95 code	TO-236AB
JESD-30 code	R-PDSO-G3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.25 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	40
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	100 MHz
VCEsat-Max	0.65 V

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DISCRETE SEMICONDUCTORS

DATA SHEET

BC859; BC860

PNP general purpose transistors

Product data sheet

Supersedes data of 1999 May 28

2004 Jan 16

BC859C,235 Related Products

	BC859C,235	BC859C,215	BC860B,215	BC860B,235	BC859B/AU,215	BC859B,215	BC859B/A2,215
Description	100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB	100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB	100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB	100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB	100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB	100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB	100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
Number of components	1	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3	3
surface mount	YES	YES	YES	YES	Yes	YES	Yes
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL	pair	DUAL	pair
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	amplifier	AMPLIFIER	amplifier
Transistor component materials	SILICON	SILICON	SILICON	SILICON	silicon	SILICON	silicon
Brand Name	NXP Semiconduc	NXP Semiconduc	NXP Semiconduc	NXP Semiconduc	-	NXP Semiconduc	-
Is it Rohs certified?	conform to	conform to	conform to	conform to	-	conform to	-
Maker	NXP	NXP	NXP	NXP	-	NXP	-
Parts packaging code	TO-236	TO-236	TO-236	TO-236	-	TO-236	-
package instruction	SMALL OUTLINE, R-PDSO-G3	PLASTIC PACKAGE-3	PLASTIC PACKAGE-3	SMALL OUTLINE, R-PDSO-G3	-	PLASTIC PACKAGE-3	-
Contacts	3	3	3	3	-	3	-
Manufacturer packaging code	SOT23	SOT23	SOT23	SOT23	-	SOT23	-
Reach Compliance Code	compli	compli	compli	compli	-	compli	-
ECCN code	EAR99	EAR99	EAR99	EAR99	-	EAR99	-
Other features	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE	-	LOW NOISE	-
Maximum collector current (IC)	0.1 A	0.1 A	0.1 A	0.1 A	-	0.1 A	-
Collector-emitter maximum voltage	30 V	30 V	45 V	45 V	-	30 V	-
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	-	SINGLE	-
Minimum DC current gain (hFE)	420	420	220	220	-	220	-
JEDEC-95 code	TO-236AB	TO-236AB	TO-236AB	TO-236AB	-	TO-236AB	-
JESD-30 code	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	-	R-PDSO-G3	-
JESD-609 code	e3	e3	e3	e3	-	e3	-
Humidity sensitivity level	1	1	1	1	-	1	-
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	-	150 °C	-
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY	-
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	-	RECTANGULAR	-
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	-	SMALL OUTLINE	-
Peak Reflow Temperature (Celsius)	260	260	260	260	-	260	-
Polarity/channel type	PNP	PNP	PNP	PNP	-	PNP	-
Maximum power dissipation(Abs)	0.25 W	0.3 W	0.3 W	0.25 W	-	0.3 W	-
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	-	Not Qualified	-
Terminal surface	Tin (Sn)	Tin (Sn)	Tin (Sn)	Tin (Sn)	-	Tin (Sn)	-
Maximum time at peak reflow temperature	40	40	40	40	-	40	-
Nominal transition frequency (fT)	100 MHz	100 MHz	100 MHz	100 MHz	-	100 MHz	-
VCEsat-Max	0.65 V	0.65 V	0.65 V	0.65 V	-	0.65 V	-

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Shortcut: A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ

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