BC859CW,135 datasheet, PDF - EEWORLD Datasheet

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BC859CW,135: Description100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR; CategoryDiscrete semiconductor The transistor; File Size123KB，7 Pages; ManufacturerNXP; Websitehttps://www.nxp.com; Environmental Compliance

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BC859CW,135 Overview

100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR

BC859CW,135 Parametric

Parameter Name	Attribute value
Brand Name	NXP Semiconduc
Is it Rohs certified?	conform to
Maker	NXP
Parts packaging code	SC-70
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Manufacturer packaging code	SOT323
Reach Compliance Code	compli
ECCN code	EAR99
Other features	LOW NOISE
Maximum collector current (IC)	0.1 A
Collector-based maximum capacity	5 pF
Collector-emitter maximum voltage	30 V
Configuration	SINGLE
Minimum DC current gain (hFE)	420
JESD-30 code	R-PDSO-G3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.2 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	40
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	100 MHz
VCEsat-Max	0.65 V

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DISCRETE SEMICONDUCTORS

DATA SHEET

dbook, halfpage

M3D187

BC859W; BC860W

PNP general purpose transistors

Product data sheet

Supersedes data of 1997 Sep 03

1999 Apr 12

BC859CW,135 Related Products

	BC859CW,135	BC859BW,115	BC859BW,135	BC859CW,115	BC860BW,115	BC860BW,135
Description	100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR	100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR	100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR	100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR	100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR	100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR
Brand Name	NXP Semiconduc	NXP Semiconduc	NXP Semiconduc	NXP Semiconduc	NXP Semiconduc	NXP Semiconduc
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to
Maker	NXP	NXP	NXP	NXP	NXP	NXP
Parts packaging code	SC-70	SC-70	SC-70	SC-70	SC-70	SC-70
package instruction	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
Contacts	3	3	3	3	3	3
Manufacturer packaging code	SOT323	SOT323	SOT323	SOT323	SOT323	SOT323
Reach Compliance Code	compli	compli	compli	compli	compli	compli
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Other features	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE
Maximum collector current (IC)	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A
Collector-based maximum capacity	5 pF	5 pF	5 pF	5 pF	5 pF	5 pF
Collector-emitter maximum voltage	30 V	30 V	30 V	30 V	45 V	45 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	420	220	220	420	220	220
JESD-30 code	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
JESD-609 code	e3	e3	e3	e3	e3	e3
Humidity sensitivity level	1	1	1	1	1	1
Number of components	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	260	260	260	260	260
Polarity/channel type	PNP	PNP	PNP	PNP	PNP	PNP
Maximum power dissipation(Abs)	0.2 W	0.2 W	0.2 W	0.2 W	0.2 W	0.2 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES	YES	YES
Terminal surface	Tin (Sn)	Tin (Sn)	Tin (Sn)	Tin (Sn)	Tin (Sn)	Tin (Sn)
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	40	40	40	40	40	40
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	100 MHz	100 MHz	100 MHz	100 MHz	100 MHz	100 MHz
VCEsat-Max	0.65 V	0.65 V	0.65 V	0.65 V	0.65 V	0.65 V

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