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BF820W,115

Description
NPN high-voltage transistor
CategoryDiscrete semiconductor    The transistor   
File Size54KB,6 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
Download Datasheet Parametric Compare View All

BF820W,115 Overview

NPN high-voltage transistor

BF820W,115 Parametric

Parameter NameAttribute value
Brand NameNXP Semiconduc
Is it Rohs certified?conform to
MakerNXP
Parts packaging codeSC-70
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Manufacturer packaging codeSOT323
Reach Compliance Codecompli
ECCN codeEAR99
Maximum collector current (IC)0.05 A
Collector-based maximum capacity1.6 pF
Collector-emitter maximum voltage300 V
ConfigurationSINGLE
Minimum DC current gain (hFE)50
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.2 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
Transistor component materialsSILICON
Nominal transition frequency (fT)60 MHz
VCEsat-Max0.6 V
DISCRETE SEMICONDUCTORS
DATA SHEET
ge
M3D102
BF820W
NPN high-voltage transistor
Product data sheet
Supersedes data of 1997 Sep 03
2003 Sep 09

BF820W,115 Related Products

BF820W,115 BF820W,135 BF820W
Description NPN high-voltage transistor NPN high-voltage transistor NPN high-voltage transistor
Is it Rohs certified? conform to conform to conform to
Parts packaging code SC-70 SC-70 SC-70
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Contacts 3 3 3
Reach Compliance Code compli compli compli
ECCN code EAR99 EAR99 EAR99
Maximum collector current (IC) 0.05 A 0.05 A 0.05 A
Collector-based maximum capacity 1.6 pF 1.6 pF 1.6 pF
Collector-emitter maximum voltage 300 V 300 V 300 V
Configuration SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 50 50 50
JESD-30 code R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
JESD-609 code e3 e3 e3
Humidity sensitivity level 1 1 1
Number of components 1 1 1
Number of terminals 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260 260
Polarity/channel type NPN NPN NPN
Maximum power dissipation(Abs) 0.2 W 0.2 W 0.2 W
Certification status Not Qualified Not Qualified Not Qualified
surface mount YES YES YES
Terminal surface Tin (Sn) Tin (Sn) Tin (Sn)
Terminal form GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL
Maximum time at peak reflow temperature 40 40 30
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 60 MHz 60 MHz 60 MHz
VCEsat-Max 0.6 V 0.6 V 0.6 V
Brand Name NXP Semiconduc NXP Semiconduc -
Maker NXP NXP -
Manufacturer packaging code SOT323 SOT323 -

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