BC848 series
30 V, 100 mA NPN general-purpose transistors
Rev. 07 — 17 November 2009
Product data sheet
1. Product profile
1.1 General description
NPN general-purpose transistors in Surface Mounted Device (SMD) plastic packages.
Table 1.
Product overview
Package
NXP
BC848B
BC848W
SOT23
SOT323
JEITA
-
SC-70
JEDEC
TO-236AB
-
PNP
complement
BC858B
BC858W
Type number
1.2 Features
General-purpose transistors
SMD plastic packages
1.3 Applications
General-purpose switching and amplification
1.4 Quick reference data
Table 2.
Symbol
V
CEO
I
C
h
FE
Quick reference data
Parameter
collector-emitter voltage
collector current
DC current gain
BC848B
BC848W
V
CE
= 5 V;
I
C
= 2 mA
200
110
290
-
450
800
Conditions
open base
Min
-
-
Typ
-
-
Max
30
100
Unit
V
mA
NXP Semiconductors
BC848 series
30 V, 100 mA NPN general-purpose transistors
2. Pinning information
Table 3.
Pin
1
2
3
Pinning
Description
base
emitter
collector
1
2
006aaa144
Simplified outline
3
Symbol
3
1
2
sym021
3. Ordering information
Table 4.
Ordering information
Package
Name
BC848B
BC848W
-
SC-70
Description
plastic surface mounted package; 3 leads
plastic surface mounted package; 3 leads
Version
SOT23
SOT323
Type number
4. Marking
Table 5.
BC848B
BC848W
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Marking codes
Marking code
[1]
1K*
1M*
Type number
BC848_SER_7
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 07 — 17 November 2009
2 of 12
NXP Semiconductors
BC848 series
30 V, 100 mA NPN general-purpose transistors
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
peak base current
total power dissipation
SOT23
SOT323
T
j
T
amb
T
stg
[1]
Conditions
open emitter
open base
open collector
single pulse;
t
p
≤
1 ms
single pulse;
t
p
≤
1 ms
T
amb
≤
25
°C
[1]
Min
-
-
-
-
-
-
Max
30
30
5
100
200
200
Unit
V
V
V
mA
mA
mA
-
-
-
−65
−65
250
200
150
+150
+150
mW
mW
°C
°C
°C
junction temperature
ambient temperature
storage temperature
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
6. Thermal characteristics
Table 7.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
SOT23
SOT323
[1]
Conditions
in free air
[1]
Min
Typ
Max
Unit
-
-
-
-
500
625
K/W
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
BC848_SER_7
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 07 — 17 November 2009
3 of 12
NXP Semiconductors
BC848 series
30 V, 100 mA NPN general-purpose transistors
7. Characteristics
Table 8.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol Parameter
I
CBO
Conditions
Min
-
-
-
-
200
110
-
[1]
[2]
[2]
[3]
[3]
Typ
-
-
-
150
290
-
90
200
700
900
660
-
-
2.5
2
Max
15
5
100
-
450
800
250
600
-
-
700
770
-
3
10
Unit
nA
μA
nA
collector-base cut-off V
CB
= 30 V; I
E
= 0 A
current
V
CB
= 30 V; I
E
= 0 A;
T
j
= 150
°C
emitter-base cut-off
current
DC current gain
V
EB
= 5 V; I
E
= 0 A
V
CE
= 5 V; I
C
= 10
μA
V
CE
= 5 V; I
C
= 2 mA
BC848B
BC848W
I
EBO
h
FE
V
CEsat
V
BEsat
V
BE
f
T
C
c
NF
collector-emitter
saturation voltage
base-emitter
saturation voltage
base-emitter voltage
transition frequency
I
C
= 10 mA; I
B
= 0.5 mA
I
C
= 100 mA; I
B
= 5 mA
I
C
= 10 mA; I
B
= 0.5 mA
I
C
= 100 mA; I
B
= 5 mA
I
C
= 2 mA; V
CE
= 5 V
I
C
= 10 mA; V
CE
= 5 V
V
CE
= 5 V; I
C
= 10 mA;
f = 100 MHz
mV
mV
mV
mV
mV
mV
MHz
pF
dB
-
-
-
580
-
100
-
-
collector capacitance V
CB
= 10 V; I
E
= i
e
= 0 A;
f = 1 MHz
noise figure
V
CE
= 5 V; I
C
= 200
μA;
R
S
= 2 kΩ; f = 1 kHz;
B = 200 Hz
[1]
[2]
[3]
Pulse test: t
p
≤
300
μs; δ ≤
0.02.
V
BEsat
decreases by approximately 1.7 mV/K with increasing temperature.
V
BE
decreases by approximately 2 mV/K with increasing temperature.
BC848_SER_7
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 07 — 17 November 2009
4 of 12
NXP Semiconductors
BC848 series
30 V, 100 mA NPN general-purpose transistors
600
h
FE
500
(1)
mgt727
1200
V
BE
(mV)
1000
(1)
mgt728
400
(2)
800
(2)
300
600
(3)
200
(3)
400
100
200
0
10
−1
1
10
10
2
I
C
(mA)
10
3
0
10
−2
10
−1
1
10
10
2
10
3
I
C
(mA)
V
CE
= 5 V
(1) T
amb
= 150
°C
(2) T
amb
= 25
°C
(3) T
amb
=
−55 °C
V
CE
= 5 V
(1) T
amb
=
−55 °C
(2) T
amb
= 25
°C
(3) T
amb
= 150
°C
Fig 1.
BC848B: DC current gain as a function of
collector current; typical values
10
4
mgt729
Fig 2.
BC848B: Base-emitter voltage as a function of
collector current; typical values
mgt730
1200
V
BEsat
(mV)
1000
(1)
V
CEsat
(mV)
10
3
800
(2)
600
(3)
10
2
(1)
(3) (2)
400
200
10
10
−1
1
10
10
2
I
C
(mA)
10
3
0
10
−1
1
10
10
2
I
C
(mA)
10
3
I
C
/I
B
= 20
(1) T
amb
= 150
°C
(2) T
amb
= 25
°C
(3) T
amb
=
−55 °C
I
C
/I
B
= 10
(1) T
amb
=
−55 °C
(2) T
amb
= 25
°C
(3) T
amb
= 150
°C
Fig 3.
BC848B: Collector-emitter saturation voltage
as a function of collector current; typical
values
Fig 4.
BC848B: Base-emitter saturation voltage as a
function of collector current; typical values
BC848_SER_7
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 07 — 17 November 2009
5 of 12
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