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BCX52,115

Description
1000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size1MB,22 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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BCX52,115 Overview

1000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR

BCX52,115 Parametric

Parameter NameAttribute value
Brand NameNXP Semiconduc
Is it Rohs certified?conform to
Parts packaging codeSOT-89
Contacts3
Manufacturer packaging codeSOT89
Reach Compliance Codecompli
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)1 A
Collector-emitter maximum voltage60 V
ConfigurationSINGLE
Minimum DC current gain (hFE)25
JESD-30 codeR-PSSO-F3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power dissipation(Abs)1.3 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formFLAT
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)50 MHz
Base Number Matches1
BCP52; BCX52; BC52PA
60 V, 1 A PNP medium power transistors
Rev. 9 — 18 October 2011
Product data sheet
1. Product profile
1.1 General description
PNP medium power transistor series in Surface-Mounted Device (SMD) plastic packages.
Table 1.
Product overview
Package
NXP
BCP52
BCX52
BC52PA
[1]
Type number
[1]
NPN complement
JEITA
SC-73
SC-62
-
JEDEC
-
TO-243
-
BCP55
BCX55
BC55PA
SOT223
SOT89
SOT1061
Valid for all available selection groups.
1.2 Features and benefits
High current
Three current gain selections
High power dissipation capability
Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)
Leadless very small SMD plastic package with medium power capability (SOT1061)
AEC-Q101 qualified
1.3 Applications
Linear voltage regulators
High-side switches
Battery-driven devices
Power management
MOSFET drivers
Amplifiers
1.4 Quick reference data
Table 2.
Symbol
V
CEO
I
C
I
CM
Quick reference data
Parameter
collector-emitter voltage
collector current
peak collector current
single pulse; t
p
1 ms
Conditions
open base
Min
-
-
-
Typ
-
-
-
Max
60
1
2
Unit
V
A
A

BCX52,115 Related Products

BCX52,115 BCX52-16,115 BCX52-16,135 BCX52-10,115 BC52-16PA,115 BC52PA,115 BC52-10PA,115
Description 1000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR 1 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-243 1 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-243 1 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-243 1 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-243 1 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-243 1 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-243
Brand Name NXP Semiconduc NXP Semiconductor NXP Semiconductor NXP Semiconduc - NXP Semiconductor NXP Semiconduc
Is it Rohs certified? conform to conform to conform to conform to - conform to conform to
Parts packaging code SOT-89 SOT-89 SOT-89 SOT-89 - DFN DFN
Contacts 3 3 3 3 - 3 3
Manufacturer packaging code SOT89 SOT89 SOT89 SOT89 - SOT1061 SOT1061
Reach Compliance Code compli compliant compliant compli - compliant compli
Shell connection COLLECTOR COLLECTOR - COLLECTOR COLLECTOR - -
Number of components 1 1 - 1 1 - -
Number of terminals 3 3 - 3 3 - -
surface mount YES YES - YES Yes - -
Terminal form FLAT FLAT - FLAT FLAT - -
Terminal location SINGLE SINGLE - SINGLE SINGLE - -
transistor applications AMPLIFIER AMPLIFIER - AMPLIFIER AMPLIFIER - -
Transistor component materials SILICON SILICON - SILICON SILICON - -
Maker - NXP NXP NXP - NXP NXP
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