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BCX55-16,135

Description
1 A, 60 V, NPN, Si, POWER TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size1MB,22 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
Download Datasheet Parametric View All

BCX55-16,135 Overview

1 A, 60 V, NPN, Si, POWER TRANSISTOR

BCX55-16,135 Parametric

Parameter NameAttribute value
Brand NameNXP Semiconduc
Is it Rohs certified?conform to
MakerNXP
Parts packaging codeSOT-89
Contacts3
Manufacturer packaging codeSOT89
Reach Compliance Codecompli
Shell connectionCOLLECTOR
Maximum collector current (IC)1 A
Collector-emitter maximum voltage60 V
ConfigurationSINGLE
Minimum DC current gain (hFE)100
JESD-30 codeR-PSSO-F3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)1 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formFLAT
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)130 MHz
BCP55; BCX55; BC55PA
60 V, 1 A NPN medium power transistors
Rev. 8 — 24 October 2011
Product data sheet
1. Product profile
1.1 General description
NPN medium power transistor series in Surface-Mounted Device (SMD) plastic packages.
Table 1.
Product overview
Package
NXP
BCP55
BCX55
BC55PA
[1]
Type number
[1]
PNP complement
JEITA
SC-73
SC-62
-
JEDEC
-
TO-243
-
BCP52
BCX52
BC52PA
SOT223
SOT89
SOT1061
Valid for all available selection groups.
1.2 Features and benefits
High current
Three current gain selections
High power dissipation capability
Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)
Leadless very small SMD plastic package with medium power capability (SOT1061)
AEC-Q101 qualified
1.3 Applications
Linear voltage regulators
Low-side switches
Battery-driven devices
Power management
MOSFET drivers
Amplifiers
1.4 Quick reference data
Table 2.
Symbol
V
CEO
I
C
I
CM
h
FE
Quick reference data
Parameter
collector-emitter voltage
collector current
peak collector current
DC current gain
h
FE
selection -10
h
FE
selection -16
[1]
Pulse test: t
p
300
s; 
= 0.02.
Conditions
open base
single pulse; t
p
1 ms
V
CE
= 2 V; I
C
= 150 mA
V
CE
= 2 V; I
C
= 150 mA
V
CE
= 2 V; I
C
= 150 mA
[1]
[1]
[1]
Min
-
-
-
63
63
100
Typ
-
-
-
-
-
-
Max
60
1
2
250
160
250
Unit
V
A
A

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