datasheet
EEWORLDEEWORLDEEWORLD
Datasheet
Part Number

Keyword

Search
Keyword

Part Number

Search
Datasheet> All Categories > Discrete semiconductor> diode> RHRU50100
PDF
Preview

RHRU50100

Description
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 50A, 1000V V(RRM), Silicon, TO-218, 1 PIN
CategoryDiscrete semiconductor    diode   
File Size422KB，5 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Download Datasheet Parametric Compare View All

RHRU50100 Overview

Rectifier Diode, Avalanche, 1 Phase, 1 Element, 50A, 1000V V(RRM), Silicon, TO-218, 1 PIN

RHRU50100 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerFairchild
Parts packaging codeTO-218
package instructionR-PSFM-D1
Contacts1
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresFREE WHEELING DIODE
applicationHYPERFAST SOFT RECOVERY
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)2.5 V
JESD-30 codeR-PSFM-D1
JESD-609 codee0
Maximum non-repetitive peak forward current500 A
Number of components1
Phase1
Number of terminals1
Maximum operating temperature175 °C
Maximum output current50 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage1000 V
Maximum reverse recovery time0.095 µs
surface mountNO
technologyAVALANCHE
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formSOLDER LUG
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED

RHRU50100 Preview

RHRU5070, RHRU5080, RHRU5090, RHRU50100
Data Sheet
April 1995
File Number 3665.1
50A, 700V - 1000V Hyperfast Diodes
Title
RHRU5070, RHRU5080, RHRU5090 and RHRU50100
hyperfast diodes
HRU
(TA49066) are75ns). They havewith soft recovery character-
istics (t
RR
<
half the recovery time of
70,
ultrafast diodes and are silicon nitride passivated ion-
HRU5
implanted epitaxial planar construction.
0,
These devices are intended for use as freewheeling/clamp-
HRU5
ing diodes and rectifiers in a variety of switching power sup-
plies and other power switching applications. Their low
0,
stored charge and hyperfast soft recovery minimize ringing
HRU5
and electrical noise in many power switching circuits reduc-
00)
ing power loss in the switching transistors.
b-
Ordering Information
t
PACKAGING AVAILABILITY
A,
0V -
PART NUMBER
PACKAGE
BRAND
00V
RHRU5070
TO-218
RHRU5070
per-
RHRU5080
TO-218
RHRU5080
t
RHRU5090
TO-218
RHRU5090
odes)
RHRU50100
TO-218
RHRU50100
uthor
NOTE: When ordering, use the entire part number.
ey-
rds
ter-
Cor-
ratio
per-
t
odes,
a-
che
ergy
ted,
itch-
Features
• Hyperfast with Soft Recovery . . . . . . . . . . . . . . . . <75ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . .+175
o
C
• Reverse Voltage Up To . . . . . . . . . . . . . . . . . . . . . . 1000V
• Avalanche Energy Rated
• Planar Construction
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Package
JEDEC STYLE TO-218
ANODE
CATHODE
(FLANGE)
Symbol
K
A
Absolute Maximum Ratings
T
C
= +25
o
C, Unless Otherwise Specified
RHRU5080
800
800
800
50
100
500
150
40
-65 to +175
RHRU5090 RHRU50100 UNITS
900
1000
V
900
1000
V
900
1000
V
50
50
A
100
500
150
40
-65 to +175
100
500
150
40
-65 to +175
A
A
W
mj
o
C
RHRU5070
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RRM
700
700
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RWM
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
R
700
50
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . .I
F(AV)
o
C)
(T
C
= +65
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FSM
100
(Square Wave, 20kHz)
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FSM
500
(Halfwave, 1 Phase, 60Hz)
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
150
40
Avalanche Energy (L = 40mH) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AVL
Operating and Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . T
STG
, T
J
-65 to +175
©2001 Fairchild Semiconductor Corporation
RHRU5070, RHRU5080, RHRU5090, RHRU50100 Rev. A
RHRU5070, RHRU5080, RHRU5090, RHRU50100
Electrical Specifications
T
C
= +25
o
C, Unless Otherwise Specified
RHRU5070
SYMBOL
V
F
TEST CONDITION
I
F
= 50A, T
C
= +25
o
C
I
F
= 50A, T
C
= +150
o
C
I
R
V
R
= 700V, T
C
= +25
o
C
V
R
= 800V, T
C
= +25
o
C
V
R
= 900V, T
C
= +25
o
C
V
R
= 1000V, T
C
= +25
o
C
I
R
V
R
= 700V, T
C
= +150
o
C
V
R
= 800V, T
C
= +150
o
C
V
R
= 900V, T
C
= +150
o
C
V
R
= 1000V, T
C
= +150
o
C
t
RR
I
F
= 1A, dI
F
/dt = 100A/
µ
s
I
F
= 50A, dI
F
/dt = 100A/
µ
s
t
A
t
B
Q
RR
C
J
R
θ
JC
DEFINITIONS
V
F
= Instantaneous forward voltage (pw = 300
µ
s, D = 2%).
I
R
= Instantaneous reverse current.
t
RR
= Reverse recovery time (Figure 2), summation of t
A
+ t
B
.
t
A
= Time to reach peak reverse current (See Figure 2).
t
B
= Time from peak I
RM
to projected zero crossing of I
RM
based on a straight line from peak I
RM
through 25% of I
RM
(See Figure 2).
R
θ
JC
= Thermal resistance junction to case.
E
AVL
= Controlled avalanche energy (See Figure 10 and Figure 11).
pw = Pulse width.
D = Duty cycle.
I
F
= 50A, dI
F
/dt = 100A/
µ
s
I
F
= 50A, dI
F
/dt = 100A/
µ
s
I
F
= 50A, dI
F
/dt = 100A/
µ
s
V
R
= 10V, I
F
= 0A
MIN
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP
-
-
-
-
-
-
-
-
-
-
-
-
54
32
125
150
-
MAX
3.0
2.5
500
-
-
-
3.0
-
-
-
75
95
-
-
-
-
1.0
RHRU5080
MIN
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP
-
-
-
-
-
-
-
-
-
-
-
-
54
32
125
150
-
MAX
3.0
2.5
-
500
-
-
-
3.0
-
-
75
95
-
-
-
-
1.0
RHRU5090
MIN
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP
-
-
-
-
-
-
-
-
-
-
-
-
54
32
125
150
-
MAX
3.0
2.5
-
-
500
-
-
-
3.0
-
75
95
-
-
-
-
1.0
RHRU50100
MIN
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP
-
-
-
-
-
-
-
-
-
-
-
-
54
32
125
150
-
MAX
3.0
2.5
-
-
-
500
-
-
-
3.0
75
95
-
-
-
-
1.0
UNITS
V
V
µ
A
µ
A
µ
A
µ
A
mA
mA
mA
mA
ns
ns
ns
ns
nC
pF
o
C/W
V
1
AMPLITUDE CONTROLS
F
I
V
2
AMPLITUDE CONTROLS dI/dt
F
L
1
= SELF INDUCTANCE OF
R
1
R
4
+ L
LOOP
Q
1
+V
1
0
t
2
t
1
R
2
+V
3
Q
2
t
1
≥
5t
A(MAX)
t
2
> t
RR
t
3
> 0
L
1
t
A(MIN)
≤
R
4
10
L
LOOP
0
Q
4
DUT
0.25 I
RM
I
RM
C1
R
4
I
F
dI
F
dt
t
A
t
RR
t
B
t
3
0
-V
2
R
3
Q
3
-V
4
V
RM
V
R
FIGURE 1. t
RR
TEST CIRCUIT
FIGURE 2. WAVEFORMS AND DEFINITIONS
©2001 Fairchild Semiconductor Corporation
RHRU5070, RHRU5080, RHRU5090, RHRU50100 Rev. A
RHRU5070, RHRU5080, RHRU5090, RHRU50100
Typical Performance Curves
250
100
3000
1000
I
F
, FORWARD CURRENT - (A)
I
R
, REVERSE CURRENT - (µA)
+175
o
C
100
+100
o
C
10
+175
o
C
10
+100
o
C
+25
o
C
1
+25
o
C
0.1
1
0
0.5
1
1.5
2
2.5
3
3.5
4
0.01
0
200
400
600
800
1000
V
F
, FORWARD VOLTAGE - (V)
V
R
, REVERSE VOLTAGE - (V)
FIGURE 3. TYPICAL FORWARD CURRENT vs FORWARD
VOLTAGE DROP
100
T
C
= +25
o
C
FIGURE 4. TYPICAL REVERSE CURRENT vs REVERSE VOLT-
AGE
200
T
C
= +100
o
C
t, RECOVERY TIMES - (ns)
80
t
RR
t, RECOVERY TIMES - (ns)
150
t
RR
60
t
A
40
t
B
10
100
t
A
50
t
B
0
1
0
10
I
F
, FORWARD CURRENT - (A)
50
1
10
I
F
, FORWARD CURRENT - (A)
50
FIGURE 5. TYPICAL t
RR
, t
A
AND t
B
CURVES vs FORWARD
CURRENT AT +25
o
C
T
C
= +175
o
C
400
FIGURE 6. TYPICAL t
RR
, t
A
AND t
B
CURVES vs FORWARD
CURRENT AT +100
o
C
50
I
F
(AV) , AVERAGE FORWARD CURRENT - (A)
t, RECOVERY TIMES - (ns)
300
t
RR
200
t
A
100
t
B
40
DC
30
SQ. WAVE
20
10
0
1
10
I
F
, FORWARD CURRENT - (A)
50
0
25
50
75
100
125
150
175
T
C
, CASE TEMPERATURE - (
o
C)
FIGURE 7. TYPICAL t
RR
, t
A
AND t
B
CURVES vs FORWARD
CURRENT AT +175
o
C
FIGURE 8. CURRENT DERATING CURVE FOR ALL TYPES
©2001 Fairchild Semiconductor Corporation
RHRU5070, RHRU5080, RHRU5090, RHRU50100 Rev. A
RHRU5070, RHRU5080, RHRU5090, RHRU50100
Typical Performance Curves
500
C
J
, JUNCTION CAPACITANCE (pF)
(Continued)
400
300
200
100
0
0
50
100
150
200
V
R
, REVERSE VOLTAGE (V)
FIGURE 9. TYPICAL JUNCTION CAPACITANCE vs REVERSE VOLTAGE
Test Circuit and Waveforms
I
MAX
= 1A
L = 40mH
R < 0.1Ω
E
AVL
= 1/2LI
2
[V
AVL
/(V
AVL
- V
DD
)]
Q1 AND Q2 ARE 1000V MOSFETS
Q1
L
R
+
130Ω
1MΩ
DUT
V
DD
12V
Q2
I
L
130Ω
CURRENT
SENSE
V
AVL
-
I V
12V
t
0
t
1
t
2
t
FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT
FIGURE 11. AVALANCHE CURRENT AND VOLTAGE WAVE-
FORMS
©2001 Fairchild Semiconductor Corporation
RHRU5070, RHRU5080, RHRU5090, RHRU50100 Rev. A
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E
2
CMOS
TM
EnSigna
TM
FACT™
FACT Quiet Series™
DISCLAIMER
FAST
FASTr™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
PowerTrench
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
SMART START™
Star* Power™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
UltraFET™
VCX™
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or
In Design
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H
More (Only the first 5 pages are displayed. Please Download Datasheet to view the full content.) >

RHRU50100 Related Products

RHRU50100 RHRU5070 RHRU5090 RHRU5080
Description Rectifier Diode, Avalanche, 1 Phase, 1 Element, 50A, 1000V V(RRM), Silicon, TO-218, 1 PIN Rectifier Diode, Avalanche, 1 Phase, 1 Element, 50A, 700V V(RRM), Silicon, TO-218, 1 PIN Rectifier Diode, Avalanche, 1 Phase, 1 Element, 50A, 900V V(RRM), Silicon, TO-218, 1 PIN Rectifier Diode, Avalanche, 1 Phase, 1 Element, 50A, 800V V(RRM), Silicon, TO-218, 1 PIN
Is it Rohs certified? incompatible incompatible incompatible incompatible
Maker Fairchild Fairchild Fairchild Fairchild
Parts packaging code TO-218 TO-218 TO-218 TO-218
package instruction R-PSFM-D1 TO-218, 1 PIN TO-218, 1 PIN TO-218, 1 PIN
Contacts 1 1 1 1
Reach Compliance Code unknown compliant compliant compli
ECCN code EAR99 EAR99 EAR99 EAR99
Other features FREE WHEELING DIODE FREE WHEELING DIODE FREE WHEELING DIODE FREE WHEELING DIODE
application HYPERFAST SOFT RECOVERY HYPERFAST SOFT RECOVERY HYPERFAST SOFT RECOVERY HYPERFAST SOFT RECOVERY
Shell connection CATHODE CATHODE CATHODE CATHODE
Configuration SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 2.5 V 2.5 V 2.5 V 2.5 V
JESD-30 code R-PSFM-D1 R-PSFM-D1 R-PSFM-D1 R-PSFM-D1
JESD-609 code e0 e0 e0 e0
Maximum non-repetitive peak forward current 500 A 500 A 500 A 500 A
Number of components 1 1 1 1
Phase 1 1 1 1
Number of terminals 1 1 1 1
Maximum operating temperature 175 °C 175 °C 175 °C 175 °C
Maximum output current 50 A 50 A 50 A 50 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 1000 V 700 V 900 V 800 V
Maximum reverse recovery time 0.095 µs 0.095 µs 0.095 µs 0.095 µs
surface mount NO NO NO NO
technology AVALANCHE AVALANCHE AVALANCHE AVALANCHE
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form SOLDER LUG SOLDER LUG SOLDER LUG SOLDER LUG
Terminal location SINGLE SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED

Recommended Resources

LA2785 application circuit

5G14 current expansion circuit

Exposure timer 2

Negative feedback voltmeter

Long delay circuit composed of 555 integrated circuit

Sound circuit: AN5265

Here I found that there are a lot of problems with the serial port. Let’s take a look at my experience.
//rs422 over USART1#include "msp430x14x.h"#include "foshan.h"//P3.6 UTXD1//P3.7 URXD1char fe_wt[12] = {'1','D','F', 'F','E','5','0','1','2','3','0',13};uchar fe_rd[8] = {'1','D', 'E','F','E','5','2',1...
shenyong Microcontroller MCU
Analysis of a Fully Differential Amplifier
The basic circuit of a fully differential amplifier is as follows:It can be equivalent to the following form:Assuming that the voltage gain of the amplifier is much greater than 1, then its input volt...
dontium Analogue and Mixed Signal
2407 What does each digit of WSGR mean?
[b]2407 What does each bit of WSGR mean? [/b]2407 What does each bit of WSGR mean? Why is it that sometimes WSGR=0X000; //disable all wait states but sometimes WSGR=0X01C0; Now I want to understand wh...
zh00080008 DSP and ARM Processors
Feasibility discussion of C2000 minimum system board DIY plan
Dear forum friends,I would like to gather everyone's wisdom in the forum to DIY a C2000 minimum system board. Do you think it is feasible?...
安_然 Microcontroller MCU
Small problems in using AD10 Altium Designer
The AD version I use is AD10 and I have 3 problems with the use of the software. 1: When there are multiple schematics, how can the component numbers of each schematic be labeled according to differen...
ligongxiaobie Integrated technical exchanges
How to learn the principle of TTL inverter
After reading Kang Huaguang's digital circuit, I still can't understand the principle of TTL inverter, so I want to ask the experts for help....
candy456789 Embedded System
Shortcut:   L0 L1 L2 L3 L4 L5 L6 L7 L8 L9 LA LB LC LD LE LF LG LH LI LJ LK LL LM LN LO LP LQ LR LS LT LU LV LW LX LY LZ M0 M1 M2 M3 M4 M5 M6 M7 M8 M9 MA MB MC MD ME MF MG MH MI MJ MK ML MM MN MO MP MQ MR MS MT MU MV MW MX MY MZ N0 N1 N2 N3 N4 N5 N6 N7 N8 NA NB NC ND NE NF NG NH NI NJ NK NL NM NN NO NP NQ NR NS NT NU NV NX NZ O0 O1 O2 O3 OA OB OC OD OE OF OG OH OI OJ OK OL OM ON OP OQ OR OS OT OV OX OY OZ P0 P1 P2 P3 P4 P5 P6 P7 P8 P9 PA PB PC PD PE PF PG PH PI PJ PK PL PM PN PO PP PQ PR PS PT PU PV PW PX PY PZ Q1 Q2 Q3 Q4 Q5 Q6 Q8 Q9 QA QB QC QE QF QG QH QK QL QM QP QR QS QT QV QW QX QY R0 R1 R2 R3 R4 R5 R6 R7 R8 R9 RA RB RC RD RE RF RG RH RI RJ RK RL RM RN RO RP RQ RR RS RT RU RV RW RX RY RZ

Popular Components

  1. 2FGSB169604GT
  2. TMM-124-05-FM-D-SM-12-P-M
  3. LP24-44-15.0M-20F1CG
  4. TFAW20TTEB561K/910M
  5. 101C143T200DF1B
  6. TNPW0603234RBXEA
  7. SCAR2512205R00Q
  8. SIT9045AEU73R28NLA1.000000D
  9. 3KP90C_R2_10001
  10. 1A6
  11. A2541WV-S-2x22P-C1435-G15
  12. 0805W8F620JT5E

Popular Articles

  1. Two calibration methods for insulating oil withstand voltage tester
  2. 35-Design of commercial electronic price-calculating scale based on 51 single-chip microcomputer
  3. Rohde & Schwarz launches R&S VSESIM-VSS, combining EDA simulation and hardware testing
  4. Detailed wiring diagram of the tester
  5. Apple releases three new short videos showing off the iPhone 13 Pro’s video shooting capabilities
  6. Project practice: 51 single-chip microcomputer controls traffic lights
  7. 51 single-chip microcomputer series learning - line-by-line scanning to achieve matrix key simulation
  8. TI's new precision, wide-bandwidth ADC improves data acquisition performance
  9. Do you know the bandwidth of an oscilloscope? Agitek will help you understand it in seconds.
  10. How did Apple design AirPods 3?

Technical ResourceMore

  1. High efficiency and low power consumption DC voltage converter chip design and implementation
  2. Research on a voltage mode controlled PWM switching power supply
  3. Optimization design of high frequency switching power supply
  4. Phase noise analysis summary
  5. Optimal design of independent photovoltaic power generation system
  6. How to set up differential routing in Altium Designer
  7. AG6320 Specifications
  8. ModelSim Tutorials
  9. Weather Radar Principles Textbook
  10. Postgraduate Entrance Examination Circuit-Harbin Institute of Technology School of Electrical Engineering and Automation

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

About Us Customer Service Contact Information Datasheet Sitemap LatestNews
Index Files: 1043  349  157  2841  1200  21  8  4  58  25 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号