BCV62
PNP Silicon Double Transistor
3
To be used as a current mirror
Good thermal coupling and
V
BE
matching
High current gain
Low collector-emitter saturation voltage
C1 (2)
C2 (1)
1For calculation of
R
thJA
please refer to Application Note Thermal Resistance
1
4
2
1
VPS05178
Tr.1
Tr.2
E1 (3)
E2 (4)
EHA00013
Type
BCV62A
BCV62B
BCV62C
Maximum Ratings
Parameter
Marking
3Js
3Ks
3Ls
1 = C2
1 = C2
1 = C2
Pin Configuration
2 = C1
2 = C1
2 = C1
3 = E1
3 = E1
3 = E1
4 = E2
4 = E2
4 = E2
Package
SOT143
SOT143
SOT143
Symbol
V
CEO
V
CBO
V
EBS
I
C
I
CM
I
BM
P
tot
T
j
T
stg
Value
30
30
6
100
200
200
300
150
-65 ... 150
Unit
V
Collector-emitter voltage
(transistor T1)
Collector-base voltage (open emitter)
(transistor T1)
Emitter-base voltage
DC collector current
Peak collector current
Base peak current (transistor T1)
Total power dissipation,
T
S
= 99 °C
Junction temperature
Storage temperature
Thermal Resistance
mA
mW
°C
Junction - soldering point
1)
R
thJS
170
K/W
Jul-11-2001
BCV62
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
DC Characteristics of T1
Collector-emitter breakdown voltage
I
C
= 10 mA,
I
B
= 0
Collector-base breakdown voltage
I
C
= 10 µA,
I
B
= 0
Emitter-base breakdown voltage
I
E
= 10 µA,
I
C
= 0
Collector cutoff current
V
CB
= 30 V,
I
E
= 0
Collector cutoff current
V
CB
= 30 V,
I
E
= 0 ,
T
A
= 150 °C
DC current gain 1)
I
C
= 0.1 mA,
V
CE
= 5 V
DC current gain 1)
I
C
= 2 mA,
V
CE
= 5 V
BCV62A
BCV62B
BCV62C
Collector-emitter saturation voltage1)
I
C
= 10 mA,
I
B
= 0.5 mA
I
C
= 100 mA,
I
B
= 5 mA
Base-emitter saturation voltage 1)
I
C
= 10 mA,
I
B
= 0.5 mA
I
C
= 100 mA,
I
B
= 5 mA
Base-emitter voltage 1)
I
C
= 2 mA,
V
CE
= 5 V
I
C
= 10 mA,
V
CE
= 5 V
V
BE(ON)
600
-
650
-
750
820
V
BEsat
-
-
700
850
-
-
V
CEsat
-
-
75
250
300
650
h
FE
125
220
420
180
290
520
220
475
800
h
FE
100
-
-
I
CBO
-
-
5
I
CBO
-
-
15
V
(BR)EBO
6
-
-
V
(BR)CBO
30
-
-
V
(BR)CEO
30
-
-
typ.
max.
Unit
V
nA
µA
-
mV
1) Pulse test: t
≤
300
µ
s, D = 2%
2
Jul-11-2001
BCV62
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified.
Symbol
Values
Parameter
min.
DC Characteristics
Base-emitter forward voltage
I
E
= 10 µA
I
E
= 250 mA
Matching of transistor T1 and transistor T2
at
I
E2
= 0.5mA and
V
CE1
= 5V
T
A
= 25 °C
T
A
= 150 °C
Thermal coupling of transistor T1 and
transistor T2
1)
T1:
V
CE
= 5V
Maximum current of thermal stability of
I
C1
AC characteristics of transistor T1
Transition frequency
I
C
= 10 mA,
V
CE
= 5 V,
f
= 100 MHz
Collector-base capacitance
V
CB
= 10 V,
f
= 1 MHz
Emitter-base capacitance
V
EB
= 0.5 V,
f
= 1 MHz
Noise figure
I
C
= 200 µA,
V
CE
= 5 V,
R
S
= 2
k
,
Short-circuit input impedance
I
C
= 1 mA,
V
CE
= 10 V,
f
= 1 kHz
Open-circuit reverse voltage transf.ratio
I
C
= 1 mA,
V
CE
= 10 V,
f
= 1 kHz
Short-circuit forward current transf.ratio
I
C
= 1 mA,
V
CE
= 10 V,
f
= 1 kHz
I
C
= 1 mA,
V
CE
= 10 V,
f
= 1 kHz
Open-circuit output admittance
h
21e
h
22e
100
-
-
30
900
-
h
12e
-
2
-
F
f
= 200
Hz
-
2
-
C
eb
-
8
-
C
cb
-
3
-
f
T
-
250
-
Unit
max.
V
typ.
V
BES
0.4
-
I
C1
/
I
C2
-
0.7
0.7
I
E2
-
-
-
-
5
-
1.3
1.3
-
-
-
-
1.8
-
mA
MHz
pF
dB
10
-4
-
S
1) Witout emitter resistor. Device mounted on alumina 15mm x 16.5mm x 0.7mm
3
Jul-11-2001
f
= 1 kHz,
h
11e
-
4.5
-
k
BCV62
Test circuit for current matching
A
Ι
C1
2
1
V
CE1
...
T1
T2
Ι
E2
= constant
3
V
CO
4
V
CO
EHN00003
Note: Voltage drop at contacts:
V
CO
< 2/3
V
T
= 16mV
Characteristic for determination of
V
CE1
at specified
R
E
range with
I
E2
as parameter under condition of
I
C1
/
I
E2
= 1.3
A
Ι
C1
2
1
V
CE1
...
T1
T2
Ι
E2
= constant
3
R
E
4
R
E
EHN00004
Note: BCV62 with emitter resistors
4
Jul-11-2001
BCV62
Total power dissipation
P
tot
=
f
(
T
S
)
Permissible pulse load
P
totmax
/
P
totDC
=
f
(
t
p
)
10
3
P
tot max
5
P
tot DC
BCV 62
EHP00941
350
mW
t
p
D
=
T
t
p
T
250
P
tot
10
2
5
200
150
10
1
100
D
=
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
5
50
0
0
15
30
45
60
75
90 105 120
°C
150
T
S
10
0 -6
10
10
-5
10
-4
10
-3
10
-2
s
t
p
10
0
5
Jul-11-2001
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