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RURG30120CC

Description
30A, 1200V, SILICON, RECTIFIER DIODE, TO-247
CategoryDiscrete semiconductor    diode   
File Size32KB,3 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
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RURG30120CC Overview

30A, 1200V, SILICON, RECTIFIER DIODE, TO-247

RURG30120CC Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerRenesas Electronics Corporation
Reach Compliance Codenot_compliant
ECCN codeEAR99
Other featuresFREE WHEELING DIODE
applicationULTRA FAST SOFT RECOVERY
Shell connectionCATHODE
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.9 V
JEDEC-95 codeTO-247
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Maximum non-repetitive peak forward current300 A
Number of components2
Phase1
Number of terminals3
Maximum operating temperature175 °C
Maximum output current30 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage1200 V
Maximum reverse recovery time0.15 µs
surface mountNO
technologyAVALANCHE
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED

RURG30120CC Preview

RURG30120CC
Data Sheet
January 2000
File Number
3400.3
30A, 1200V Ultrafast Dual Diode
The RURG30120CC is an ultrafast dual diode with soft
recovery characteristic (t
rr
< 110ns). It has low forward
voltage drop and is silicon nitride passivated ion-implanted
epitaxial planar construction.
This device is intended for use as a freewheeling/clamping
diode and rectifier in a variety of switching power supplies
and other power switching applications. Its low stored charge
and ultrafast recovery with soft recovery characteristic
minimize ringing and electrical noise in many power
switching circuits, reducing power loss in the switching
transistors.
Formally developmental type TA49031.
Features
• Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . <110ns
• Operating Temperature. . . . . . . . . . . . . . . . . . . . . . .175
o
C
• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . .1200V
• Avalanche Energy Rated
• Planar Construction
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Ordering Information
PART NUMBER
RURG30120CC
PACKAGE
TO-247
BRAND
URG30120C
Package
JEDEC STYLE TO-247
ANODE 1
CATHODE
ANODE 2
CATHODE
(BOTTOM SIDE
METAL)
NOTE: When ordering, use the entire part number.
Symbol
K
A
1
A
2
Absolute Maximum Ratings
(Per Leg) T
C
= 25
o
C, Unless Otherwise Specified
RURG30120CC
UNITS
V
V
V
A
A
A
W
mJ
o
C
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RRM
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RWM
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
R
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
F(AV)
(T
C
= 110
o
C)
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FRM
(Square Wave, 20kHz)
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FSM
(Halfwave, 1 Phase, 60Hz)
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
D
Avalanche Energy (See Figures 7 and 8) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AVL
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
STG
, T
J
1200
1200
1200
30
60
300
125
30
-65 to 175
1
1-888-INTERSIL or 321-724-7143
|
Copyright
©
Intersil Corporation 2000
RURG30120CC
Electrical Specifications
SYMBOL
V
F
I
F
= 30A
I
F
= 30A, T
C
= 150
o
C
I
R
VR = 1200V
V
R
= 1200V, T
C
= 150
o
C
t
rr
I
F
= 1A, dI
F
/dt = 100A/µs
I
F
= 30A, dI
F
/dt = 100A/µs
t
a
t
b
R
θJC
DEFINITIONS
V
F
= Instantaneous forward voltage (pw = 300µs, D = 2%).
I
R
= Instantaneous reverse current.
t
rr
= Reverse recovery time (See Figure 6), summation of ta + tb.
t
a
= Time to reach peak reverse current (See Figure 6).
t
b
= Time from peak I
RM
to projected zero crossing of I
RM
based on a straight line from peak I
RM
through 25% of I
RM
(See Figure 6).
R
θJC
= Thermal resistance junction to case.
pw = pulse width.
D = duty cycle.
I
F
= 30A, dI
F
/dt = 100A/µs
I
F
= 30A, dI
F
/dt = 100A/µs
(Per Leg) T
C
= 25
o
C, Unless Otherwise Specified
TEST CONDITION
MIN
-
-
-
-
-
-
-
-
-
TYP
-
-
-
-
-
-
90
45
-
MAX
2.1
1.9
250
1
110
150
-
-
1.2
UNITS
V
V
µA
mA
ns
ns
ns
ns
o
C/W
Typical Performance Curves
200
100
I
F
, FORWARD CURRENT (A)
I
R
, REVERSE CURRENT (µA)
500
100
175
o
C
10
175
o
C
10
100
o
C
25
o
C
1.0
0.1
100
o
C
0.01
25
o
C
1
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
V
F
, FORWARD VOLTAGE (V)
0.001
0
200
400
600
800
1000
1200
V
R
, REVERSE VOLTAGE (V)
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE
FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
2
RURG30120CC
Typical Performance Curves
150
(Continued)
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
40
125
30
t, TIME (ns)
100
t
rr
DC
75
20
SQ. WAVE
t
a
50
10
25
0
1
10
I
F
, FORWARD CURRENT (A)
t
b
0
30
75
100
125
150
175
T
C
, CASE TEMPERATURE (
o
C)
FIGURE 3. t
rr
, t
a
AND t
b
CURVES vs FORWARD CURRENT
FIGURE 4. CURRENT DERATING CURVE
Test Circuits and Waveforms
V
GE
AMPLITUDE AND
R
G
CONTROL dI
F
/dt
t
1 AND
t
2
CONTROL I
F
L
DUT
R
G
V
GE
t
1
t
2
CURRENT
SENSE
+
V
DD
0
I
F
dI
F
dt
ta
trr
tb
IGBT
-
0.25 I
RM
I
RM
FIGURE 5. t
rr
TEST CIRCUIT
I = 1.225A
L = 40mH
R < 0.1Ω
E
AVL
= 1/2LI
2
[V
R(AVL)
/(V
R(AVL)
- V
DD
)]
Q
1
= IGBT (BV
CES
> DUT V
R(AVL)
)
L
CURRENT
SENSE
Q
1
V
DD
DUT
R
+
V
DD
I V
FIGURE 6. t
rr
WAVEFORMS AND DEFINITIONS
V
AVL
I
L
I
L
-
t
0
t
1
t
2
t
FIGURE 7. AVALANCHE ENERGY TEST CIRCUIT
FIGURE 8. AVALANCHE CURRENT AND VOLTAGE
WAVEFORMS
All Intersil semiconductor products are manufactured, assembled and tested under
ISO9000
quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site
www.intersil.com
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