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BFG425W/B,115

Description
L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size144KB,13 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet Parametric Compare View All

BFG425W/B,115 Overview

L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR

BFG425W/B,115 Parametric

Parameter NameAttribute value
Number of terminals4
Transistor polarityNPN
Maximum collector current0.0300 A
Maximum Collector-Emitter Voltage4.5 V
Processing package descriptionPlastic, CMPAK-4
Lead-freeYes
EU RoHS regulationsYes
China RoHS regulationsYes
stateACTIVE
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingtin
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
structuresingle
Shell connectionEMITTER
Number of components1
transistor applicationsswitch
Transistor component materialssilicon
Transistor typeRF small signal
highest frequency bandL band
Rated crossover frequency25000 MHz
DISCRETE SEMICONDUCTORS
DATA SHEET
BFG425W
NPN 25 GHz wideband transistor
Product specification
Supersedes data of 1998 Mar 11
2010 Sep 15

BFG425W/B,115 Related Products

BFG425W/B,115 BFG425W/C,115 BFG425W/B01,115 BFG425W/B01,135
Description L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
Number of terminals 4 4 4 4
Transistor polarity NPN NPN NPN NPN
Maximum collector current 0.0300 A 0.0300 A 0.0300 A 0.0300 A
Maximum Collector-Emitter Voltage 4.5 V 4.5 V 4.5 V 4.5 V
Processing package description Plastic, CMPAK-4 Plastic, CMPAK-4 Plastic, CMPAK-4 Plastic, CMPAK-4
Lead-free Yes Yes Yes Yes
EU RoHS regulations Yes Yes Yes Yes
China RoHS regulations Yes Yes Yes Yes
state ACTIVE ACTIVE ACTIVE ACTIVE
packaging shape Rectangle Rectangle Rectangle Rectangle
Package Size SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
surface mount Yes Yes Yes Yes
Terminal form GULL WING GULL WING GULL WING GULL WING
terminal coating tin tin tin tin
Terminal location pair pair pair pair
Packaging Materials Plastic/Epoxy Plastic/Epoxy Plastic/Epoxy Plastic/Epoxy
structure single single single single
Shell connection EMITTER EMITTER EMITTER EMITTER
Number of components 1 1 1 1
transistor applications switch switch switch switch
Transistor component materials silicon silicon silicon silicon
Transistor type RF small signal RF small signal RF small signal RF small signal
highest frequency band L band L band L band L band
Rated crossover frequency 25000 MHz 25000 MHz 25000 MHz 25000 MHz
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