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2SK1622(S)TL

Description
Power Field-Effect Transistor, 25A I(D), 60V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
CategoryDiscrete semiconductor    The transistor   
File Size101KB,1 Pages
ManufacturerHitachi (Renesas )
Websitehttp://www.renesas.com/eng/
Download Datasheet Parametric View All

2SK1622(S)TL Overview

Power Field-Effect Transistor, 25A I(D), 60V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

2SK1622(S)TL Parametric

Parameter NameAttribute value
package instructionSMALL OUTLINE, R-PSSO-G2
Reach Compliance Codeunknow
ECCN codeEAR99
ConfigurationSINGLE
Minimum drain-source breakdown voltage60 V
Maximum drain current (ID)25 A
Maximum drain-source on-resistance0.06 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSSO-G2
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
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