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PBSS2540E,115

Description
40 V, 500 mA NPN low VCEsat (BISS) transistor
CategoryDiscrete semiconductor    The transistor   
File Size150KB,11 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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PBSS2540E,115 Overview

40 V, 500 mA NPN low VCEsat (BISS) transistor

PBSS2540E,115 Parametric

Parameter NameAttribute value
Brand NameNXP Semiconduc
Is it Rohs certified?conform to
Parts packaging codeSC-75
package instructionPLASTIC, SMD, SC-75, 3 PIN
Contacts3
Manufacturer packaging codeSOT416
Reach Compliance Codecompli
ECCN codeEAR99
Maximum collector current (IC)0.5 A
Collector-emitter maximum voltage40 V
ConfigurationSINGLE
Minimum DC current gain (hFE)50
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.25 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)450 MHz
Base Number Matches1
PBSS2540E
40 V, 500 mA NPN low V
CEsat
(BISS) transistor
Rev. 02 — 15 November 2009
Product data sheet
1. Product profile
1.1 General description
NPN low V
CEsat
Breakthrough in Small Signal (BISS) transistor in a SOT416 (SC-75) SMD
plastic package.
PNP complement: PBS3540E.
1.2 Features
Low collector-emitter saturation voltage V
CEsat
High collector current capability: I
C
and I
CM
High collector current gain (h
FE
) at high I
C
High efficiency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
DC-to-DC conversion
MOSFET gate driving
Motor control
Charging circuits
Low power switches (e.g. motors, fans)
1.4 Quick reference data
Table 1.
V
CEO
I
C
I
CM
R
CEsat
[1]
Quick reference data
Conditions
open base
Min
-
-
-
I
C
= 500 mA;
I
B
= 50 mA
[1]
Symbol Parameter
collector-emitter voltage
collector current (DC)
peak collector current
collector-emitter
saturation resistance
Typ
-
-
-
380
Max
40
500
1
500
Unit
V
mA
A
-
Pulse test: t
p
300
μs; δ ≤
0.02

PBSS2540E,115 Related Products

PBSS2540E,115 PBSS2540E
Description 40 V, 500 mA NPN low VCEsat (BISS) transistor 40 V, 500 mA NPN low VCEsat (BISS) transistor
Is it Rohs certified? conform to conform to
Parts packaging code SC-75 SC-75
package instruction PLASTIC, SMD, SC-75, 3 PIN PLASTIC, SC-75, 3 PIN
Contacts 3 3
Reach Compliance Code compli compli
ECCN code EAR99 EAR99
Maximum collector current (IC) 0.5 A 0.5 A
Collector-emitter maximum voltage 40 V 40 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 50 50
JESD-30 code R-PDSO-G3 R-PDSO-G3
JESD-609 code e3 e3
Humidity sensitivity level 1 1
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260
Polarity/channel type NPN NPN
Maximum power dissipation(Abs) 0.25 W 0.25 W
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal surface Tin (Sn) Tin (Sn)
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
Maximum time at peak reflow temperature 40 30
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 450 MHz 450 MHz
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