DISCRETE SEMICONDUCTORS
DATA SHEET
fpage
M3D087
PBSS4540Z
40 V low V
CEsat
NPN transistor
Product data sheet
Supersedes data of 2001 Jul 24
2001 Nov 14
NXP Semiconductors
Product data sheet
40 V low V
CEsat
NPN transistor
FEATURES
•
Low collector-emitter saturation voltage
•
High current capabilities
•
Improved device reliability due to reduced heat
generation.
APPLICATIONS
•
Supply line switching circuits
•
Battery management applications
•
DC/DC converter applications
•
Strobe flash units
•
Heavy duty battery powered equipment (motor and lamp
drivers)
•
MOSFET driver applications.
DESCRIPTION
handbook, halfpage
PBSS4540Z
QUICK REFERENCE DATA
SYMBOL
V
CEO
I
C
I
CM
R
CEsat
PINNING
PIN
1
2
3
4
base
collector
emitter
collector
DESCRIPTION
PARAMETER
emitter-collector voltage
collector current (DC)
peak collector current
equivalent on-resistance
MAX
40
5
10
<71
UNIT
V
A
A
mΩ
4
NPN low V
CEsat
transistor in a SOT223 plastic package.
PNP complement: PBSS5540Z.
1
2, 4
MARKING
TYPE NUMBER
PBSS4540Z
MARKING CODE
PB4540
3
1
Top view
2
3
MAM287
Fig.1 Simplified outline (SOT223) and symbol.
2001 Nov 14
2
NXP Semiconductors
Product data sheet
40 V low V
CEsat
NPN transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Notes
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
notes 1 and 3
T
amb
≤
25
°C;
notes 2 and 3
CONDITIONS
open emitter
open base
open collector
−
−
−
−
−
−
−
−
−65
−
−65
MIN.
PBSS4540Z
MAX.
40
40
6
5
10
2
1.35
2
+150
150
+150
V
V
V
A
A
A
W
W
UNIT
°C
°C
°C
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
2
.
2. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm
2
.
3. For other mounting conditions, see
“Thermal considerations for SOT223 in the General Part of associated
Handbook”.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
PARAMETER
thermal resistance from junction to
ambient
note 1
note 2
CONDITIONS
VALUE
92
62.5
UNIT
K/W
K/W
Notes
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
2
.
2. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm
2
.
2001 Nov 14
3
NXP Semiconductors
Product data sheet
40 V low V
CEsat
NPN transistor
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector-base cut-off current
emitter-base cut-off current
DC current gain
CONDITIONS
V
CB
= 30 V; I
E
= 0
V
CB
= 30 V; I
E
= 0; T
j
= 150
°C
V
EB
= 5 V; I
C
= 0
V
CE
= 2 V; I
C
= 500 mA
V
CE
= 2 V; I
C
= 1 A; note 1
V
CE
= 2 V; I
C
= 2 A; note 1
V
CE
= 2 V; I
C
= 5 A; note 1
V
CEsat
collector-emitter saturation voltage
I
C
= 500 mA; I
B
= 5 mA
I
C
= 1 A; I
B
= 10 mA
I
C
= 2 A; I
B
= 200 mA
I
C
= 5 A; I
B
= 500 mA
R
CEsat
V
BEsat
V
BEon
f
T
C
c
Note
1. Pulse test: t
p
≤
300
μs; δ ≤
0.02.
equivalent on-resistance
base-emitter saturation voltage
base-emitter turn-on voltage
transition frequency
collector capacitance
I
C
= 5 A; I
B
= 500 mA; note 1
I
C
= 5 A; I
B
= 500 mA
V
CE
= 2 V; I
C
=2 A
I
C
= 100 mA; V
CE
= 10 V;
f = 100 MHz
V
CB
= 10 V; I
E
= I
e
= 0;
f = 1 MHz
MIN.
−
−
−
300
300
250
100
−
−
−
−
−
−
−
70
−
PBSS4540Z
TYP.
−
−
−
500
500
450
300
50
75
90
210
42
1.1
0.8
130
60
MAX.
100
50
100
−
−
−
−
90
120
150
355
71
1.3
1.1
−
75
UNIT
nA
μA
nA
mV
mV
mV
mV
mΩ
V
V
MHz
pF
2001 Nov 14
4
NXP Semiconductors
Product data sheet
40 V low V
CEsat
NPN transistor
PBSS4540Z
handbook, halfpage
1000
MLD683
handbook, halfpage
V
hFE
800
(1)
1200
BE
(mV)
1000
MLD684
800
600
(2)
(1)
600
(2)
400
(3)
400
(3)
200
200
0
1
10
10
2
10
3
IC (mA)
10
4
0
10
−1
1
10
10
2
10
3
10
4
IC (mA)
V
CE
= 2 V.
(1) T
amb
= 150
°C.
(2) T
amb
= 25
°C.
(3) T
amb
=
−55 °C.
V
CE
= 2 V.
(1) T
amb
=
−55 °C.
(2) T
amb
= 25
°C.
(3) T
amb
= 150
°C.
Fig.2
DC current gain as a function of collector
current; typical values.
Fig.3
Base-emitter voltage as a function of
collector current; typical values.
10
3
handbook, halfpage
VCEsat
(mV)
10
2
MLD685
10
4
handbook, halfpage
VCEsat
(mV)
10
3
MHC107
10
2
(1)
(1)
10
(2)
(3)
(2)
10
(3)
1
10
−1
1
10
10
2
10
3
10
4
IC (mA)
1
10
−1
1
10
10
2
10
3
10
4
IC (mA)
I
C
/I
B
= 20.
(1) T
amb
= 150
°C.
(2) T
amb
= 25
°C.
(3) T
amb
=
−55 °C.
T
amb
= 25
°C.
(1) I
C
/I
B
= 100.
(2) I
C
/I
B
= 50.
(3) I
C
/I
B
= 10.
Fig.4
Collector-emitter saturation voltage as a
function of collector current; typical values.
Fig.5
Collector-emitter saturation voltage as a
function of collector current; typical values.
2001 Nov 14
5
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