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PBSS305PZ,135

Description
80 V, 4.5 A PNP low V_CEsat (BISS) transistor
CategoryDiscrete semiconductor    The transistor   
File Size185KB,14 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
Download Datasheet Parametric View All

PBSS305PZ,135 Overview

80 V, 4.5 A PNP low V_CEsat (BISS) transistor

PBSS305PZ,135 Parametric

Parameter NameAttribute value
Brand NameNXP Semiconduc
Is it Rohs certified?conform to
MakerNXP
Parts packaging codeSC-73
package instructionPLASTIC, SMD, SC-73, 4 PIN
Contacts4
Manufacturer packaging codeSOT223
Reach Compliance Codecompli
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)4.5 A
Collector-emitter maximum voltage80 V
ConfigurationSINGLE
Minimum DC current gain (hFE)200
JESD-30 codeR-PDSO-G4
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals4
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power dissipation(Abs)2 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
Maximum off time (toff)285 ns
Maximum opening time (tons)100 ns
PBSS305PZ
80 V, 4.5 A PNP low V
CEsat
(BISS) transistor
Rev. 02 — 8 December 2009
Product data sheet
1. Product profile
1.1 General description
PNP low V
CEsat
Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73)
small Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS305NZ.
1.2 Features
Low collector-emitter saturation voltage V
CEsat
High collector current capability I
C
and I
CM
High collector current gain (h
FE
) at high I
C
High efficiency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
High-voltage DC-to-DC conversion
High-voltage MOSFET gate driving
High-voltage motor control
High-voltage power switches (e.g. motors, fans)
Automotive applications
1.4 Quick reference data
Table 1.
Symbol
V
CEO
I
C
I
CM
R
CEsat
[1]
Quick reference data
Parameter
collector-emitter voltage
collector current
peak collector current
collector-emitter saturation
resistance
single pulse;
t
p
1 ms
I
C
=
−4
A;
I
B
=
−200
mA
[1]
Conditions
open base
Min
-
-
-
-
Typ
-
-
-
61
Max
−80
−4.5
−9
87
Unit
V
A
A
Pulse test: t
p
300
μs; δ ≤
0.02.
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