DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D088
PBSS9110T
100 V, 1 A
PNP low V
CEsat (BISS)
transistor
Product data sheet
Supersedes data of 2004 May 06
2004 May 13
NXP Semiconductors
Product data sheet
100 V, 1 A
PNP low V
CEsat (BISS)
transistor
FEATURES
•
SOT23 package
•
Low collector-emitter saturation voltage V
CEsat
•
High collector current capability: I
C
and I
CM
•
Higher efficiency leading to less heat generation
APPLICATIONS
•
Major application segments
– Automotive 42 V power
– Telecom infrastructure
– Industrial
•
DC-to-DC conversion
•
Peripheral drivers
– Driver in low supply voltage applications (e.g. lamps
and LEDs).
– Inductive load driver (e.g. relays,
buzzers and motors).
DESCRIPTION
PNP low V
CEsat
transistor in a SOT23 plastic package.
NPN complement: PBSS8110T.
MARKING
TYPE NUMBER
PBSS9110T
Note
1.
∗
= p: Made in Hong Kong.
∗
= t: Made in Malaysia.
∗
= W: Made in China.
ORDERING INFORMATION
TYPE NUMBER
PBSS9110T
PACKAGE
NAME
−
DESCRIPTION
plastic surface mounted package; 3 leads
MARKING CODE
(1)
*U7
Top view
handbook, halfpage
PBSS9110T
QUICK REFERENCE DATA
SYMBOL
V
CEO
I
C
I
CM
R
CEsat
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
PARAMETER
collector-emitter voltage
collector current (DC)
repetitive peak collector
current
equivalent on-resistance
MAX.
−100
−1
−3
320
UNIT
V
A
A
mΩ
3
3
1
2
1
2
MAM256
Fig.1 Simplified outline (SOT23) and symbol.
VERSION
SOT23
2004 May 13
2
NXP Semiconductors
Product data sheet
100 V, 1 A
PNP low V
CEsat (BISS)
transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
tot
T
j
T
amb
T
stg
Notes
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated, standard footprint.
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
base current (DC)
total power dissipation
junction temperature
operating ambient temperature
storage temperature
T
amb
≤
25
°C;
note 1
T
amb
≤
25
°C;
note 2
limited by T
j(max)
CONDITIONS
open emitter
open base
open collector
−
−
−
−
−
−
−
−
−
−65
−65
MIN.
PBSS9110T
MAX.
−120
−100
−5
−1
−3
−300
300
480
150
+150
+150
V
V
V
A
A
UNIT
mA
mW
mW
°C
°C
°C
2. Device mounted on a printed-circuit board, single-sided copper, tin-plated and 1 cm
2
collector mounting pad.
600
P
tot
(mW)
(1)
001aaa811
400
(2)
200
0
0
40
80
120
160
T
amb
(°C)
(1) 1 cm
2
collector mounting pad.
(2) Standard footprint.
Fig.2 Power derating curves.
2004 May 13
3
NXP Semiconductors
Product data sheet
100 V, 1 A
PNP low V
CEsat (BISS)
transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th(j-a)
PARAMETER
thermal resistance from junction to
ambient
CONDITIONS
in free air; note 1
in free air; note 2
VALUE
417
260
PBSS9110T
UNIT
K/W
K/W
Notes
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated and standard footprint.
2. Device mounted on a printed-circuit board, single-sided copper, tin-plated and 1 cm
2
collector mounting pad.
10
3
Z
th
(K/W)
10
2
(1)
(2)
(3)
(4)
(5)
(6)
(7)
001aaa814
10
(8)
(9)
1
(10)
10
−1
10
−5
10
−4
10
−3
10
−2
10
−1
1
10
10
2
t
p
(s)
10
3
Mounted on printed-circuit board; 1 cm
2
collector mounting pad.
(1)
δ
= 1.
(2)
δ
= 0.75.
(3)
δ
= 0.5.
(4)
δ
= 0.33.
(5)
δ
= 0.2.
(6)
δ
= 0.1.
(7)
δ
= 0.05.
(8)
δ
= 0.02.
(9)
δ
= 0.01.
(10)
δ
= 0.
Fig.3 Transient thermal impedance as a function of pulse time; typical values.
2004 May 13
4
NXP Semiconductors
Product data sheet
100 V, 1 A
PNP low V
CEsat (BISS)
transistor
PBSS9110T
10
3
Z
th
(K/W)
10
2
(1)
(2)
(3)
(4)
(5)
(6)
(7)
001aaa813
10
(8)
(9)
(10)
1
10
−1
10
−5
10
−4
10
−3
10
−2
10
−1
1
10
10
2
t
p
(s)
10
3
Mounted on printed-circuit board; standard footprint.
(1)
δ
= 1.
(2)
δ
= 0.75.
(3)
δ
= 0.5.
(4)
δ
= 0.33.
(5)
δ
= 0.2.
(6)
δ
= 0.1.
(7)
δ
= 0.05.
(8)
δ
= 0.02.
(9)
δ
= 0.01.
(10)
δ
= 0.
Fig.4 Transient thermal impedance as a function of pulse time; typical values.
2004 May 13
5