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PBSS9110T,215

Description
1000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
CategoryDiscrete semiconductor    The transistor   
File Size111KB,12 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
Download Datasheet Parametric Compare View All

PBSS9110T,215 Overview

1000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB

PBSS9110T,215 Parametric

Parameter NameAttribute value
Brand NameNXP Semiconduc
Is it Rohs certified?conform to
MakerNXP
Parts packaging codeTO-236
package instructionPLASTIC PACKAGE-3
Contacts3
Manufacturer packaging codeSOT23
Reach Compliance Codecompli
ECCN codeEAR99
Maximum collector current (IC)1 A
Collector-emitter maximum voltage100 V
ConfigurationSINGLE
Minimum DC current gain (hFE)150
JEDEC-95 codeTO-236AB
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Maximum power dissipation(Abs)0.48 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D088
PBSS9110T
100 V, 1 A
PNP low V
CEsat (BISS)
transistor
Product data sheet
Supersedes data of 2004 May 06
2004 May 13

PBSS9110T,215 Related Products

PBSS9110T,215 PBSS9110T/DG,215 PBSS9110T
Description 1000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB 1000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB 100 V, 1 A PNP low VCEsat (BISS) transistor
Number of components 1 1 1
Number of terminals 3 3 3
surface mount YES Yes YES
Terminal form GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Is it Rohs certified? conform to - conform to
Maker NXP - NXP
Parts packaging code TO-236 - SOT-23
package instruction PLASTIC PACKAGE-3 - PLASTIC PACKAGE-3
Contacts 3 - 3
Reach Compliance Code compli - compli
ECCN code EAR99 - EAR99
Maximum collector current (IC) 1 A - 1 A
Collector-emitter maximum voltage 100 V - 100 V
Configuration SINGLE - SINGLE
Minimum DC current gain (hFE) 150 - 150
JEDEC-95 code TO-236AB - TO-236AB
JESD-30 code R-PDSO-G3 - R-PDSO-G3
JESD-609 code e3 - e3
Humidity sensitivity level 1 - 1
Maximum operating temperature 150 °C - 150 °C
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY
Package shape RECTANGULAR - RECTANGULAR
Package form SMALL OUTLINE - SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 - 260
Polarity/channel type PNP - PNP
Maximum power dissipation(Abs) 0.48 W - 0.48 W
Certification status Not Qualified - Not Qualified
Terminal surface Tin (Sn) - Tin (Sn)
Maximum time at peak reflow temperature 40 - 30
Nominal transition frequency (fT) 100 MHz - 100 MHz

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