DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D187
PMST2369
NPN switching transistor
Product data sheet
Supersedes data of 1997 May 05
1999 Apr 22
NXP Semiconductors
Product data sheet
NPN switching transistor
FEATURES
•
Low current (max. 200 mA)
•
Low voltage (max. 15 V).
APPLICATIONS
•
High-speed switching applications, primarily in portable
and consumer equipment.
DESCRIPTION
NPN switching transistor in a SOT323 plastic package.
MARKING
TYPE NUMBER
PMST2369
Note
1.
∗
= - : Made in Hong Kong.
∗
= t : Made in Malaysia.
MARKING CODE
(1)
∗1J
1
Top view
2
handbook, halfpage
PMST2369
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
3
3
1
2
MAM062
Fig.1 Simplified outline (SOT323) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
1. Transistor mounted on an FR4 printed-circuit board.
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
t
p
≤
10
µs
CONDITIONS
open emitter
open base
open collector
−
−
−
−
−
−
−
−65
−
−65
MIN.
MAX.
40
15
5
200
300
100
200
+150
150
+150
V
V
V
mA
mA
mA
mW
°C
°C
°C
UNIT
1999 Apr 22
2
NXP Semiconductors
Product data sheet
NPN switching transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
CONDITIONS
I
E
= 0; V
CB
= 20 V
I
E
= 0; V
CB
= 20 V; T
j
= 125
°C
I
C
= 0; V
EB
= 4 V
I
C
= 10 mA; V
CE
= 1 V
I
C
= 100 mA; V
CE
= 2 V; note 1
V
CEsat
V
BEsat
C
c
f
T
t
on
t
d
t
r
t
off
t
s
t
f
Note
1. Pulse test: t
p
≤
300
µs; δ ≤
0.02.
collector-emitter saturation voltage I
C
= 10 mA; I
B
= 1 mA
base-emitter saturation voltage
collector capacitance
transition frequency
I
C
= 10 mA; I
B
= 1 mA
I
E
= i
e
= 0; V
CB
= 5 V; f = 1 MHz
I
C
= 10 mA; V
CE
= 10 V; f = 100 MHz
I
Con
= 10 mA; I
Bon
= 3 mA;
I
Boff
=
−1.5
mA
−
−
−
40
20
−
700
−
500
−
−
−
−
−
−
MIN.
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
VALUE
625
PMST2369
UNIT
K/W
MAX.
400
30
100
120
−
−
250
850
4
−
UNIT
nA
µA
nA
I
C
= 10 mA; V
CE
= 1 V; T
amb
=
−55 °C
20
mV
mV
pF
MHz
Switching times (between 10% and 90% levels);
(see Fig.2)
turn-on time
delay time
rise time
turn-off time
storage time
fall time
10
4
6
20
10
10
ns
ns
ns
ns
ns
ns
1999 Apr 22
3
NXP Semiconductors
Product data sheet
NPN switching transistor
PMST2369
handbook, full pagewidth
VBB
VCC
RB
oscilloscope
Vi
R1
(probe)
450
Ω
R2
RC
Vo
(probe)
450
Ω
DUT
oscilloscope
MLB826
V
i
= 0.5 V to 4.2 V; T = 500
µs;
t
p
= 10
µs;
t
r
= t
f
≤
1 ns.
R1 = 56
Ω;
R2 = 1 kΩ; R
B
= 1 kΩ; R
C
= 270
Ω.
V
BB
= 0.2 V; V
CC
= 2.7 V.
Oscilloscope: input impedance Z
i
= 50
Ω.
Fig.2 Test circuit for switching times.
1999 Apr 22
4
NXP Semiconductors
Product data sheet
NPN switching transistor
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
PMST2369
SOT323
D
B
E
A
X
y
HE
v
M
A
3
Q
A
A1
c
1
e1
e
bp
2
w
M
B
Lp
detail X
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.1
0.8
A1
max
0.1
bp
0.4
0.3
c
0.25
0.10
D
2.2
1.8
E
1.35
1.15
e
1.3
e1
0.65
HE
2.2
2.0
Lp
0.45
0.15
Q
0.23
0.13
v
0.2
w
0.2
OUTLINE
VERSION
SOT323
REFERENCES
IEC
JEDEC
EIAJ
SC-70
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
1999 Apr 22
5
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