PMBT5550,235 datasheet, PDF - EEWORLD Datasheet

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PMBT5550,235: Description300 mA, 140 V, NPN, Si, SMALL SIGNAL TRANSISTOR; CategoryDiscrete semiconductor The transistor; File Size58KB，7 Pages; ManufacturerNXP; Websitehttps://www.nxp.com; Environmental Compliance

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PMBT5550,235 Overview

300 mA, 140 V, NPN, Si, SMALL SIGNAL TRANSISTOR

PMBT5550,235 Parametric

Parameter Name	Attribute value
Brand Name	NXP Semiconduc
Is it Rohs certified?	conform to
Parts packaging code	TO-236
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Manufacturer packaging code	SOT23
Reach Compliance Code	compli
ECCN code	EAR99
Maximum collector current (IC)	0.3 A
Collector-based maximum capacity	6 pF
Collector-emitter maximum voltage	140 V
Configuration	SINGLE
Minimum DC current gain (hFE)	20
JESD-30 code	R-PDSO-G3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.35 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	40
Transistor component materials	SILICON
Nominal transition frequency (fT)	100 MHz
VCEsat-Max	0.25 V
Base Number Matches	1

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DISCRETE SEMICONDUCTORS

DATA SHEET

dbook, halfpage

M3D088

PMBT5550

NPN high-voltage transistor

Product data sheet

Supersedes data of 1999 Apr 15

2004 Jan 21

PMBT5550,235 Related Products

	PMBT5550,235	PMBT5550,215	PMBT5550
Description	300 mA, 140 V, NPN, Si, SMALL SIGNAL TRANSISTOR	300 mA, 140 V, NPN, Si, SMALL SIGNAL TRANSISTOR	NPN high-voltage transistor
Is it Rohs certified?	conform to	conform to	conform to
Parts packaging code	TO-236	TO-236	SOT-23
package instruction	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
Contacts	3	3	3
Reach Compliance Code	compli	compli	compli
ECCN code	EAR99	EAR99	EAR99
Maximum collector current (IC)	0.3 A	0.3 A	0.3 A
Collector-based maximum capacity	6 pF	6 pF	6 pF
Collector-emitter maximum voltage	140 V	140 V	140 V
Configuration	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	20	20	20
JESD-30 code	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
JESD-609 code	e3	e3	e3
Humidity sensitivity level	1	1	1
Number of components	1	1	1
Number of terminals	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	260	260
Polarity/channel type	NPN	NPN	NPN
Maximum power dissipation(Abs)	0.35 W	0.35 W	0.35 W
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES
Terminal surface	Tin (Sn)	Tin (Sn)	Tin (Sn)
Terminal form	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	40	40	30
Transistor component materials	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	100 MHz	100 MHz	100 MHz
VCEsat-Max	0.25 V	0.25 V	0.25 V
Base Number Matches	1	1	1
Brand Name	NXP Semiconduc	NXP Semiconduc	-
Manufacturer packaging code	SOT23	SOT23	-

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