PMBT3946VPN
40 V, 200 mA NPN/PNP switching transistor
Rev. 01 — 31 August 2009
Product data sheet
1. Product profile
1.1 General description
NPN/PNP double switching transistor in a SOT666 ultra small and flat lead
Surface-Mounted Device (SMD) plastic package.
Table 1.
Product overview
Package
NXP
PMBT3946VPN
SOT666
JEITA
-
NPN/NPN
complement
PMBT3904VS
PNP/PNP
complement
PMBT3906VS
Type number
1.2 Features
I
Double general-purpose switching transistor
I
Board-space reduction
I
Ultra small and flat lead SMD plastic package
1.3 Applications
I
General-purpose switching and amplification
1.4 Quick reference data
Table 2.
Symbol
V
CEO
I
C
TR1 (NPN)
h
FE
TR2 (PNP)
h
FE
DC current gain
V
CE
=
−1
V;
I
C
=
−10
mA
100
180
300
DC current gain
V
CE
= 1 V;
I
C
= 10 mA
100
180
300
Quick reference data
Parameter
collector-emitter voltage
collector current
Conditions
open base
Min
-
-
Typ
-
-
Max
40
200
Unit
V
mA
Per transistor; for the PNP transistor with negative polarity
NXP Semiconductors
PMBT3946VPN
40 V, 200 mA NPN/PNP switching transistor
2. Pinning information
Table 3.
Pin
1
2
3
4
5
6
Pinning
Description
emitter TR1
base TR1
collector TR2
emitter TR2
base TR2
collector TR1
1
2
3
1
2
sym019
Simplified outline
6
5
4
Graphic symbol
6
5
4
TR2
TR1
3
3. Ordering information
Table 4.
Ordering information
Package
Name
PMBT3946VPN
-
Description
plastic surface-mounted package; 6 leads
Version
SOT666
Type number
4. Marking
Table 5.
Marking codes
Marking code
ZE
Type number
PMBT3946VPN
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
TR1 (NPN)
V
CBO
TR2 (PNP)
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
peak base current
total power dissipation
single pulse;
t
p
≤
1 ms
single pulse;
t
p
≤
1 ms
T
amb
≤
25
°C
[1][2]
Parameter
collector-base voltage
Conditions
open emitter
open emitter
open base
open collector
Min
-
-
-
-
-
-
-
-
Max
60
−40
40
6
200
200
100
240
Unit
V
V
V
V
mA
mA
mA
mW
Per transistor; for the PNP transistor with negative polarity
PMBT3946VPN_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 31 August 2009
2 of 15
NXP Semiconductors
PMBT3946VPN
40 V, 200 mA NPN/PNP switching transistor
Table 6.
Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per device
P
tot
T
j
T
amb
T
stg
[1]
[2]
Parameter
total power dissipation
junction temperature
ambient temperature
storage temperature
Conditions
T
amb
≤
25
°C
[1][2]
Min
-
-
−55
−65
Max
360
150
+150
+150
Unit
mW
°C
°C
°C
Reflow soldering is the only recommended soldering method.
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
400
P
tot
(mW)
300
006aab604
200
100
0
−75
−25
25
75
125
175
T
amb
(°C)
FR4 PCB, standard footprint
Fig 1.
Per device: Power derating curves SOT666
6. Thermal characteristics
Table 7.
Symbol
R
th(j-a)
R
th(j-sp)
Per device
R
th(j-a)
[1]
[2]
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
thermal resistance from
junction to ambient
in free air
[1][2]
Conditions
in free air
[1][2]
Min
-
-
Typ
-
-
Max
521
100
Unit
K/W
K/W
Per transistor
-
-
347
K/W
Reflow soldering is the only recommended soldering method.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
PMBT3946VPN_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 31 August 2009
3 of 15
NXP Semiconductors
PMBT3946VPN
40 V, 200 mA NPN/PNP switching transistor
10
3
duty cycle =
Z
th(j-a)
(K/W)
10
2
1
0.5
0.33
0.2
0.1
0.05
0.02
10
0.01
0
0.75
006aab605
1
10
−5
10
−4
10
−3
10
−2
10
−1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, standard footprint
Fig 2.
Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
7. Characteristics
Table 8.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol
TR1 (NPN)
I
CBO
I
EBO
h
FE
collector-base cut-off V
CB
= 30 V; I
E
= 0 A
current
emitter-base cut-off
current
DC current gain
V
EB
= 6 V; I
C
= 0 A
V
CE
= 1 V
I
C
= 0.1 mA
I
C
= 1 mA
I
C
= 10 mA
I
C
= 50 mA
I
C
= 100 mA
V
CEsat
V
BEsat
collector-emitter
saturation voltage
base-emitter
saturation voltage
I
C
= 10 mA; I
B
= 1 mA
I
C
= 50 mA; I
B
= 5 mA
I
C
= 10 mA; I
B
= 1 mA
I
C
= 50 mA; I
B
= 5 mA
60
80
100
60
30
-
-
650
-
180
180
180
105
50
75
120
750
850
-
-
300
-
-
200
300
850
950
mV
mV
mV
mV
-
-
-
-
50
50
nA
nA
Parameter
Conditions
Min
Typ
Max
Unit
PMBT3946VPN_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 31 August 2009
4 of 15
NXP Semiconductors
PMBT3946VPN
40 V, 200 mA NPN/PNP switching transistor
Table 8.
Characteristics
…continued
T
amb
= 25
°
C unless otherwise specified.
Symbol
t
d
t
r
t
on
t
s
t
f
t
off
C
c
C
e
f
T
NF
Parameter
delay time
rise time
turn-on time
storage time
fall time
turn-off time
collector capacitance V
CB
= 5 V; I
E
= i
e
= 0 A;
f = 1 MHz
emitter capacitance
transition frequency
noise figure
V
EB
= 500 mV;
I
C
= i
c
= 0 A; f = 1 MHz
V
CE
= 20 V; I
C
= 10 mA;
f = 100 MHz
V
CE
= 5 V; I
C
= 100
µA;
R
S
= 1 kΩ;
f = 10 Hz to 15.7 kHz
Conditions
V
CC
= 3 V; I
C
= 10 mA;
I
Bon
= 1 mA;
I
Boff
=
−1
mA
Min
-
-
-
-
-
-
-
-
300
-
Typ
-
-
-
-
-
-
-
-
-
-
Max
35
35
70
200
50
250
4
8
-
5
Unit
ns
ns
ns
ns
ns
ns
pF
pF
MHz
dB
TR2 (PNP)
I
CBO
I
EBO
h
FE
collector-base cut-off V
CB
=
−30
V; I
E
= 0 A
current
emitter-base cut-off
current
DC current gain
V
EB
=
−6
V; I
C
= 0 A
V
CE
=
−1
V
I
C
=
−0.1
mA
I
C
=
−1
mA
I
C
=
−10
mA
I
C
=
−50
mA
I
C
=
−100
mA
V
CEsat
V
BEsat
t
d
t
r
t
on
t
s
t
f
t
off
C
c
collector-emitter
saturation voltage
base-emitter
saturation voltage
delay time
rise time
turn-on time
storage time
fall time
turn-off time
collector capacitance V
CB
=
−5
V; I
E
= i
e
= 0 A;
f = 1 MHz
I
C
=
−10
mA; I
B
=
−1
mA
I
C
=
−50
mA; I
B
=
−5
mA
I
C
=
−10
mA; I
B
=
−1
mA
I
C
=
−50
mA; I
B
=
−5
mA
V
CC
=
−3
V;
I
C
=
−10
mA;
I
Bon
=
−1
mA;
I
Boff
= 1 mA
60
80
100
60
30
-
-
-
-
-
-
-
-
-
-
-
180
180
180
130
50
−100
−165
−750
−850
-
-
-
-
-
-
-
-
-
300
-
-
−250
−400
−850
−950
35
35
70
225
75
300
4.5
mV
mV
mV
mV
ns
ns
ns
ns
ns
ns
pF
-
-
-
-
−50
−50
nA
nA
PMBT3946VPN_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 31 August 2009
5 of 15
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